LM158QML LM158QML Low Power Dual Operational Amplifiers Literature Number: SNOSAP3E LM158QML Low Power Dual Operational Amplifiers General Description Advantages The LM158 series consists of two independent, high gain, internally frequency compensated operational amplifiers which were designed specifically to operate from a single power supply over a wide range of voltages. Operation from split power supplies is also possible and the low power supply current drain is independent of the magnitude of the power supply voltage. Application areas include transducer amplifiers, dc gain blocks and all the conventional op amp circuits which now can be more easily implemented in single power supply systems. For example, the LM158 series can be directly operated off of the standard +5V power supply voltage which is used in digital systems and will easily provide the required interface electronics without requiring the additional ±15V power supplies. ■ ■ ■ ■ ■ ■ ■ ■ Unique Characteristics ■ Features ■ Available with radiation guarantee ■ In the linear mode the input common-mode voltage range includes ground and the output voltage can also swing to ground, even though operated from only a single power supply voltage. ■ The unity gain cross frequency is temperature compensated. ■ The input bias current is also temperature compensated. Two internally compensated op amps Eliminates need for dual supplies Allows direct sensing near Gnd and VO also goes to Gnd Compatible with all forms of logic Power drain suitable for battery operation ■ ■ ■ ■ ■ 100 krad(Si) — High Dose Rate 100 krad(Si) — ELDRS Free Internally frequency compensated for unity gain Large dc voltage gain: 100 dB Wide bandwidth (unity gain): 1 MHz (temperature compensated) Wide power supply range: — Single supply: 3V to 32V — or dual supplies: ±1.5V to ±16V Very low supply current drain (500 μA) − essentially independent of supply voltage Low input offset voltage: 2 mV Input common-mode voltage range includes ground Differential input voltage range equal to the power supply voltage Large output voltage swing: 0V to V+ − 1.5V Ordering Information NS Part Number SMD Part Number LM158H/883 NS Package Number Package Description H08C 8LD T0–99 Metal Can LM158J/883 5962–8771001PA J08A 8LD Ceramic DIP LM158H-SMD 5962–8771001GA H08C 8LD T0–99 Metal Can LM158AH/883 5962–8771002GA H08C 8LD T0–99 Metal Can 8LD Ceramic DIP LM158AJ/883 5962–8771002PA J08A LM158AWG/883 5962–8771002QXA WG10A LM158AHRQMLV HIGH DOSE RATE ONLY (Note 11) 5962R8771002VGA 100 krad(Si) H08C 8LD T0–99 Metal Can LM158AJ-QMLV 5962–8771002VPA J08A 8LD Ceramic DIP LM158AJRQMLV HIGH DOSE RATE ONLY (Note 11) 5962R8771002VPA 100 krad(Si) J08A 8LD Ceramic DIP LM158AWGRQMLV HIGH DOSE RATE ONLY (Note 11) 5962R8771002VXA 100 krad(Si) WG10A LM158A MDR HIGH DOSE RATE ONLY DIE (Notes 1, 11) 5962R8771002V9A 100 krad(Si) LM158AHRLQMLV ELDRS FREE ONLY (Note 12) 5962R8771003VGA 100 krad(Si) H08C 8LD T0–99 Metal Can LM158AJRLQMLV ELDRS FREE ONLY (Note 12) 5962R8771003VPA 100 krad(Si) J08A 8LD Ceramic DIP © 2009 National Semiconductor Corporation 201502 10LD Ceramic SOIC 10LD Ceramic SOIC www.national.com LM158QML Low Power Dual Operational Amplifiers January 13, 2009 LM158QML NS Part Number SMD Part Number NS Package Number LM158AWGRLQMLV ELDRS FREE ONLY (Note 12) 5962R8771003VXA 100 krad(Si) WG10A LM158A MDE ELDRS FREE ONLY DIE (Notes 1, 12) 5962R8771003V9A 100 krad(Si) Package Description 10LD Ceramic SOIC Note 1: FOR ADDITIONAL DIE INFORMATION, PLEASE VISIT THE HI REL WEB SITE AT: www.national.com/analog/space/level_die Connection Diagrams Metal Can Package 20150201 Top View See NS Package Number H08C DIP Package 10LD Ceramic SOIC 20150202 Top View See NS Package Number WG10A 20150204 Top View See NS Package Number J08A www.national.com 2 LM158QML Schematic Diagram (Each Amplifier) 20150203 3 www.national.com LM158QML Absolute Maximum Ratings (Note 2) Supply Voltage, V+ Differential Input Voltage Input Voltage Power Dissipation (Note 3) Output Short-Circuit to GND(Note 4) (One Amplifier) V+ ≤ 15VDC and TA = 25°C Maximum Junction Temperature (TJmax) Input Current (VI < −0.3V)(Note 5) Operating Temperature Range 32VDC 32VDC −0.3VDC to +32VDC 830 mW Continuous 150°C 50 mA −55°C ≤ TA ≤ +125°C −65°C ≤ TA ≤ +150°C Storage Temperature Range Lead Temperature (Soldering, 10 seconds) Metal Can Ceramic DIP Ceramic SOIC Thermal Resistance 300°C 260°C 260°C θJA Metal Can (Still Air) Metal Can (500LF/Min Air Flow) Ceramic DIP (Still Air) Ceramic DIP (500LF/Min Air Flow) Ceramic SOIC (Still Air) Ceramic SOIC (500LF/Min Air Flow) 155°C/W 80°C/W 132°C/W 81°C/W 195°C/W 131°C/W θJC Metal Can Ceramic DIP Ceramic SOIC Package Weight Metal Can Ceramic DIP Ceramic SOIC ESD Tolerance (Note 8) 42°C/W 23°C/W 33°C/W 1,000mg 1,100mg 220mg 250V Quality Conformance Inspection Mil-Std-883, Method 5005 - Group A Subgroup Description Temp °C 1 Static tests at +25 2 Static tests at +125 3 Static tests at -55 4 Dynamic tests at +25 5 Dynamic tests at +125 6 Dynamic tests at -55 7 Functional tests at +25 8A Functional tests at +125 8B Functional tests at -55 9 Switching tests at +25 10 Switching tests at +125 11 Switching tests at -55 12 Settling time at +25 13 Settling time at +125 14 Settling time at -55 www.national.com 4 LM158QML LM158 Electrical Characteristics SMD 5962–8771001 DC Parameters The following conditions apply, unless otherwise specified. Symbol ICC VOH VOL ISink ISource All voltages referenced to device ground. Max Units Subgroups +VCC = 5V, RL = 100K, VO = 1.4V 1.2 mA 1, 2, 3 +VCC = 30V, RL = 100K, VO = 1.4V 3.0 mA 1 4.0 mA 2, 3 Parameter Conditions Power Supply Current Output Voltage High Output Voltage Low Output Sink Current Output Source Current Notes Min +VCC = 30V, RL = 2KΩ 26 V 1, 2, 3 +VCC = 30V, RL = 10KΩ 27 V 1, 2, 3 +VCC = 30V, RL = 10KΩ 20 mV 1, 2, 3 +VCC = 30V, ISink = 1µA 20 mV 1, 2, 3 +VCC = 5V, RL = 10KΩ 20 mV 1, 2, 3 +VCC = 15V, VO = 200mV, +VI = 0V, -VI = +65mV 12 µA 1 +VCC = 15V, VO = 2V, +VI = 0V, -VI = +65mV 10 mA 1 mA 2, 3 5.0 +VCC = 15V, VO = 2V, +VI = 0V, -VI = -65mV -20 mA 1 -10 mA 2, 3 mA 1 IOS Short Circuit Current +VCC = 5V, VO = 0V -60 VIO Input Offset Voltage +VCC = 30V, VCM = 0V, -5.0 5.0 mV 1 RS = 50Ω, VO = 1.4V -7.0 7.0 mV 2, 3 +VCC = 30V, VCM = 28.5V, -5.0 5.0 mV 1 -7.0 7.0 mV 2, 3 +VCC = 5V, VCM = 0V, -5.0 5.0 mV 1 RS = 50Ω, VO = 1.4V -7.0 7.0 mV 2, 3 dB 1 RS = 50Ω, VO = 1.4V +VCC = 30V, VCM = 28V, RS = 50Ω, VO = 1.4V CMRR Common Mode Rejection Ratio +VCC = 30V, RS = 50Ω VI = 0V to 28.5V, ±IIB Input BIas Current +VCC = 5V, VCM = 0V IIO Input Offset Current Power Supply Rejection Ratio +VCC = 5V to 30V, VCM = 0V VCM Common Mode Voltage Range +VCC = 30V Differential Input Voltage AVS Large Signal Gain (Note 6) -150 -1.0 nA 1 (Note 6) -300 -1.0 nA 2, 3 -30 30 nA 1 -100 100 nA 2, 3 dB 1 +VCC = 5V, VCM = 0V PSRR VDiff 70 65 +VCC = 15V, RL = 2KΩ, VO = 1V to 11V 5 (Note 7), (Note 9) 28.5 V 1 (Note 7), (Note 9) 28.0 V 2, 3 (Note 10) 32 V 1, 2, 3 50 V/mV 4 25 V/mV 5, 6 www.national.com LM158QML LM158A Electrical Characteristics SMD 5962–8771002, High Dose Rate DC Parameters The following conditions apply, unless otherwise specified. Symbol ICC VOH VOL All voltages referenced to device ground. Max Units Subgroups +VCC = 5V, RL = 100K, VO = 1.4V 1.2 mA 1, 2, 3 +VCC = 30V, RL = 100K, VO = 1.4V 3.0 mA 1 4.0 mA 2, 3 Parameter Conditions Power Supply Current Output Voltage High Output Voltage Low Notes Min +VCC = 30V, RL = 2KΩ 26 V 1, 2, 3 +VCC = 30V, RL = 10KΩ 27 V 1, 2, 3 +VCC = 30V, RL = 10KΩ +VCC = 30V, ISink = 1µA +VCC = 5V, RL = 10KΩ ISink ISource Output Sink Current Output Source Current 40 mV 1 100 mV 2, 3 40 mV 1 100 mV 2, 3 40 mV 1 100 mV 2, 3 +VCC = 15V, VO = 200mV, +VI = 0V, -VI = +65mV 12 µA 1 +VCC = 15V, VO = 2V, +VI = 0V, -VI = +65mV 10 mA 1 mA 2, 3 5.0 +VCC = 15V, VO = 2V, +VI = 0V, -VI = -65mV -20 mA 1 -10 mA 2, 3 mA 1 IOS Short Circuit Current +VCC = 5V, VO = 0V -60 VIO Input Offset Voltage +VCC = 30V, VCM = 0V, -2.0 2.0 mV 1 RS = 50Ω, VO = 1.4V -4.0 4.0 mV 2, 3 +VCC = 30V, VCM = 28.5V, -2.0 2.0 mV 1 -4.0 4.0 mV 2, 3 +VCC = 5V, VCM = 0V, -2.0 2.0 mV 1 RS = 50Ω, VO = 1.4V -4.0 4.0 mV 2, 3 dB 1 RS = 50Ω, VO = 1.4V +VCC = 30V, VCM = 28V, RS = 50Ω, VO = 1.4V CMRR Common Mode Rejection Ratio +VCC = 30V, RS = 50Ω VI = 0V to 28.5V, ±IIB Input BIas Current +VCC = 5V, VCM = 0V IIO Input Offset Current Power Supply Rejection Ratio +VCC = 5V to 30V, VCM = 0V VCM Common Mode Voltage Range +VCC = 30V Differential Input Voltage AVS Large Signal Gain www.national.com (Note 6) -50 -1.0 nA 1 (Note 6) -100 -1.0 nA 2, 3 -10 10 nA 1 -30 30 nA 2, 3 dB 1 +VCC = 5V, VCM = 0V PSRR VDiff 70 65 +VCC = 15V, RL = 2KΩ, VO = 1V to 11V 6 (Notes 7, 9) 28.5 V 1 (Notes 7, 9) 28.0 V 2, 3 (Note 10) 32 V 1, 2, 3 50 V/mV 4 25 V/mV 5, 6 LM158QML SMD 5962–8771002, High Dose Rate DC Drift Parameters The following conditions apply, unless otherwise specified. All voltages referenced to device ground. Delta calculations are performed on QMLV devices at Group B, Subgroup 5 only. Symbol VIO Parameter Input Offset Voltage Conditions Notes +VCC = 30V, VCM = 0V, Min Max Units Subgroups -0.5 0.5 mV 1 -0.5 0.5 mV 1 -0.5 0.5 mV 1 -10 10 nA 1 RS = 50Ω, VO = 1.4V +VCC = 30V, VCM = 28.5V, RS = 50Ω, VO = 1.4V +VCC = 5V, VCM = 0V, RS = 50Ω, VO = 1.4V ±IIB Input Bias Current +VCC = 5V, VCM = 0V SMD 5962–8771002, High Dose Rate 100K Post Radiation Limits @ +25°C DC Parameters The following conditions apply, unless otherwise specified. Symbol Parameter VIO Input Offset Voltage (Note 6) (Note 11) All voltages referenced to device ground. Conditions Notes Min Max Units Sub groups (Note 11) -4.0 4.0 mV 1 (Note 11) -4.0 4.0 mV 1 (Note 11) -4.0 4.0 mV 1 +VCC = 5V, VCM = 0V (Notes 6, 11) -60 -1.0 nA 1 +VCC = 5V, RL = 100K, VO = 1.4V (Note 11) 1.5 mA 1 +VCC = 30V, VCM = 0V, RS = 50Ω, VO = 1.4V +VCC = 30V, VCM = 28.5V, RS = 50Ω, VO = 1.4V +VCC = 5V, VCM = 0V, RS = 50Ω, VO = 1.4V ±IIB Input Bias Current ICC Power Supply Current 7 www.national.com LM158QML LM158A Electrical Characteristics SMD 5962–8771003 ELDRS Free Only DC Parameters The following conditions apply, unless otherwise specified. Symbol ICC VOH VOL All voltages referenced to device ground. Max Units Subgroups +VCC = 5V, RL = 100K, VO = 1.4V 1.2 mA 1, 2, 3 +VCC = 30V, RL = 100K, VO = 1.4V 3.0 mA Parameter Conditions Power Supply Current Output Voltage High Output Voltage Low Notes Min 4.0 +VCC = 30V, RL = 2KΩ 26 V 1, 2, 3 +VCC = 30V, RL = 10KΩ 27 V 1, 2, 3 +VCC = 30V, RL = 10KΩ +VCC = 30V, ISink = 1µA +VCC = 5V, RL = 10KΩ ISink ISource Output Sink Current Output Source Current 1, 2, 3 40 mV 1 100 mV 2, 3 40 mV 1 100 mV 2, 3 40 mV 1 100 mV 2, 3 +VCC = 15V, VO = 200mV, +VI = 0V, -VI = +65mV 12 µA 1 +VCC = 15V, VO = 2V, +VI = 0V, -VI = +65mV 10 mA 1 mA 2, 3 5.0 +VCC = 15V, VO = 2V, +VI = 0V, -VI = -65mV -20 mA 1 -10 mA 2, 3 mA 1 IOS Short Circuit Current +VCC = 5V, VO = 0V -60 VIO Input Offset Voltage +VCC = 30V, VCM = 0V, -2.0 2.0 mV 1 RS = 50Ω, VO = 1.4V -4.0 4.0 mV 2, 3 +VCC = 30V, VCM = 28.5V, -2.0 2.0 mV 1 -4.0 4.0 mV 2, 3 +VCC = 5V, VCM = 0V, -2.0 2.0 mV 1 RS = 50Ω, VO = 1.4V -4.0 4.0 mV 2, 3 dB 1 RS = 50Ω, VO = 1.4V +VCC = 30V, VCM = 28V, RS = 50Ω, VO = 1.4V CMRR Common Mode Rejection Ratio +VCC = 30V, RS = 50Ω VI = 0V to 28.5V, ±IIB Input BIas Current +VCC = 5V, VCM = 0V IIO Input Offset Current Power Supply Rejection Ratio +VCC = 5V to 30V, VCM = 0V VCM Common Mode Voltage Range +VCC = 30V Differential Input Voltage AVS Large Signal Gain www.national.com (Note 6) -50 -1.0 nA 1 (Note 6) -100 -1.0 nA 2, 3 -10 10 nA 1 -30 30 nA 2, 3 dB 1 +VCC = 5V, VCM = 0V PSRR VDiff 70 65 +VCC = 15V, RL = 2KΩ, VO = 1V to 11V 8 (Note 7), (Note 9) 28.5 V 1 (Note 7), (Note 9) 28.0 V 2, 3 (Note 10) 32 V 1, 2, 3 50 V/mV 4 25 V/mV 5, 6 LM158QML SMD 5962–8771003, ELDRS Free Only DC Drift Parameters The following conditions apply, unless otherwise specified. All voltages referenced to device ground. Delta calculations are performed on QMLV devices at Group B, Subgroup 5 only. Symbol VIO Parameter Input Offset Voltage Conditions Notes +VCC = 30V, VCM = 0V, Min Max Units Subgroups -0.5 0.5 mV 1 -0.5 0.5 mV 1 -0.5 0.5 mV 1 -10 10 nA 1 RS = 50Ω, VO = 1.4V +VCC = 30V, VCM = 28.5V, RS = 50Ω, VO = 1.4V +VCC = 5V, VCM = 0V, RS = 50Ω, VO = 1.4V ±IIB Input Bias Current +VCC = 5V, VCM = 0V (Note 6) SMD 5962–8771003, ELDRS Free Only 100K Post Radiation Limits @ +25°C (Note 12) DC Parameters The following conditions apply, unless otherwise specified. Symbol Parameter VIO Input Offset Voltage All voltages referenced to device ground. Conditions +VCC = 30V, VCM = 0V, Notes Min Max Units Sub groups (Note 12) -4.0 4.0 mV 1 (Note 12) -4.0 4.0 mV 1 (Note 12) -4.0 4.0 mV 1 (Notes 6, 12) -60 -1.0 nA 1 RS = 50Ω, VO = 1.4V +VCC = 30V, VCM = 28.5V, RS = 50Ω, VO = 1.4V +VCC = 5V, VCM = 0V, RS = 50Ω, VO = 1.4V ±IIB Input Bias Current +VCC = 5V, VCM = 0V Note 2: Absolute Maximum Ratings indicate limits beyond which damage to the device may occur. Operating Ratings indicate conditions for which the device is functional, but do not guarantee specific performance limits. For guaranteed specifications and test conditions, see the Electrical Characteristics. The guaranteed specifications apply only for the test conditions listed. Some performance characteristics may degrade when the device is not operated under the listed test conditions. Note 3: The maximum power dissipation must be derated at elevated temperatures and is dictated by TJmax (maximum junction temperature), θJA (package junction to ambient thermal resistance), and TA (ambient temperature). The maximum allowable power dissipation at any temperature is PDmax = (TJmax - TA)/ θJA or the number given in the Absolute Maximum Ratings, whichever is lower. Note 4: Short circuits from the output to V+ can cause excessive heating and eventual destruction. When considering short circuits to ground, the maximum output current is approximately 40 mA independent of the magnitude of V+. At values of supply voltage in excess of +15V, continuous short-circuits can exceed the power dissipation ratings and cause eventual destruction. Destructive dissipation can result from simultaneous shorts on all amplifiers. Note 5: This input current will only exist when the voltage at any of the input leads is driven negative. It is due to the collector-base junction of the input PNP transistors becoming forward biased and thereby acting as input diode clamps. In addition to this diode action, there is also lateral NPN parasitic transistor action on the IC chip. This transistor action can cause the output voltages of the op amps to go to the V+voltage level (or to ground for a large overdrive) for the time duration that an input is driven negative. This is not destructive and normal output states will re-establish when the input voltage, which was negative, again returns to a value greater than −0.3V (at 25°C). Note 6: The direction of the input current is out of the IC due to the PNP input stage. This current is essentially constant, independent of the state of the output so no loading change exists on the input lines. Note 7: The input common-mode voltage of either input signal voltage should not be allowed to go negative by more than 0.3V (at 25°C). The upper end of the common-mode voltage range is V+ −1.5V (at 25°C), but either or both inputs can go to +32V without damage, independent of the magnitude of V+. Note 8: Human body model, 1.5 kΩ in series with 100 pF. Note 9: Guaranteed by input offset voltage. Note 10: Guaranteed parameter not tested. Note 11: Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics except as listed in the Post Radiation Limits Table. These parts may be dose rate sensitive in a space environment and demonstrate enhanced low dose rate sensitivity. Radiation end point limits for the noted parameters are guaranteed only for the conditions as specified in MIL-STD-883, per Test Method 1019, Condition A. Note 12: Pre and post irradiation limits are identical to those listed under AC and DC electrical characteristics except as listed in the Post Radiation Limits Table. These parts may be sensitive in a high dose environment. Low dose rate testing has been performed on a wafer-by-wafer basis, per Test Method 1019, Condition D of MIL-STD-883, with no enhanced low dose rate sensitivity (ELDRS). 9 www.national.com LM158QML Typical Performance Characteristics Input Voltage Range Input Current 20150234 20150235 Supply Current Voltage Gain 20150236 20150237 Open Loop Frequency Response Common-Mode Rejection Ratio 20150238 20150239 www.national.com 10 Voltage Follower Pulse Response (Small Signal) 20150241 20150240 Large Signal Frequency Response Output Characteristics Current Sourcing 20150242 20150243 Output Characteristics Current Sinking Current Limiting 20150244 20150245 11 www.national.com LM158QML Voltage Follower Pulse Response LM158QML Application Hints The LM158 series are op amps which operate with only a single power supply voltage, have true-differential inputs, and remain in the linear mode with an input common-mode voltage of 0 VDC. These amplifiers operate over a wide range of power supply voltage with little change in performance characteristics. At 25°C amplifier operation is possible down to a minimum supply voltage of 2.3 VDC. Precautions should be taken to insure that the power supply for the integrated circuit never becomes reversed in polarity or that the unit is not inadvertently installed backwards in a test socket as an unlimited current surge through the resulting forward diode within the IC could cause fusing of the internal conductors and result in a destroyed unit. Large differential input voltages can be easily accommodated and, as input differential voltage protection diodes are not needed, no large input currents result from large differential input voltages. The differential input voltage may be larger than V+ without damaging the device. Protection should be provided to prevent the input voltages from going negative more than −0.3 VDC (at 25°C). An input clamp diode with a resistor to the IC input terminal can be used. To reduce the power supply current drain, the amplifiers have a class A output stage for small signal levels which converts to class B in a large signal mode. This allows the amplifiers to both source and sink large output currents. Therefore both NPN and PNP external current boost transistors can be used to extend the power capability of the basic amplifiers. The output voltage needs to raise approximately 1 diode drop above ground to bias the on-chip vertical PNP transistor for output current sinking applications. For ac applications, where the load is capacitively coupled to the output of the amplifier, a resistor should be used, from the output of the amplifier to ground to increase the class A bias current and prevent crossover distortion. Where the load is directly coupled, as in dc applications, there is no crossover distortion. www.national.com Capacitive loads which are applied directly to the output of the amplifier reduce the loop stability margin. Values of 50 pF can be accommodated using the worst-case non-inverting unity gain connection. Large closed loop gains or resistive isolation should be used if larger load capacitance must be driven by the amplifier. The bias network of the LM158 establishes a drain current which is independent of the magnitude of the power supply voltage over the range of 3 VDC to 30 VDC. Output short circuits either to ground or to the positive power supply should be of short time duration. Units can be destroyed, not as a result of the short circuit current causing metal fusing, but rather due to the large increase in IC chip dissipation which will cause eventual failure due to excessive junction temperatures. Putting direct short-circuits on more than one amplifier at a time will increase the total IC power dissipation to destructive levels, if not properly protected with external dissipation limiting resistors in series with the output leads of the amplifiers. The larger value of output source current which is available at 25°C provides a larger output current capability at elevated temperatures (see typical performance characteristics) than a standard IC op amp. The circuits presented in the section on typical applications emphasize operation on only a single power supply voltage. If complementary power supplies are available, all of the standard op amp circuits can be used. In general, introducing a pseudo-ground (a bias voltage reference of V+/2) will allow operation above and below this value in single power supply systems. Many application circuits are shown which take advantage of the wide input common-mode voltage range which includes ground. In most cases, input biasing is not required and input voltages which range to ground can easily be accommodated. 12 LM158QML Typical Single-Supply Applications (V+ = 5.0 VDC) Non-Inverting DC Gain (0V Output) 20150206 20150207 *R not needed due to temperature independent IIN DC Summing Amplifier (VIN'S ≥ 0 VDC and VO ≥ 0 VDC) Power Amplifier 20150209 20150208 VO = 0 VDC for VIN = 0 VDC AV = 10 Where: VO = V1 + V2 −V3 − V4 (V1 + V2) ≥ (V3 + V4) to keep VO > 0 VDC 13 www.national.com LM158QML “BI-QUAD” RC Active Bandpass Filter 20150210 fo = 1 kHz Q = 50 Av = 100 (40 dB) Fixed Current Sources Lamp Driver 20150212 20150211 www.national.com 14 LM158QML LED Driver Current Monitor 20150213 20150214 *(Increase R1 for IL small) VL ≤ V+ −2V Driving TTL Voltage Follower 20150215 20150217 VO = VIN Pulse Generator 20150216 15 www.national.com LM158QML Squarewave Oscillator Pulse Generator 20150218 20150219 Low Drift Peak Detector 20150220 HIGH ZIN LOW ZOUT www.national.com 16 LM158QML High Compliance Current Sink Comparator with Hysteresis 20150222 20150221 IO = 1 amp/volt VIN (Increase RE for IO small) Voltage Controlled Oscillator (VCO) 20150223 *WIDE CONTROL VOLTAGE RANGE: 0 VDC ≤ VC ≤ 2 (V+ −1.5V DC) 17 www.national.com LM158QML AC Coupled Inverting Amplifier 20150224 Ground Referencing a Differential Input Signal 20150225 www.national.com 18 LM158QML AC Coupled Non-Inverting Amplifier 20150226 Av = 11 (As Shown) DC Coupled Low-Pass RC Active Filter 20150227 fo = 1 kHz Q=1 AV = 2 19 www.national.com LM158QML Bandpass Active Filter 20150228 fo = 1 kHz Q = 25 High Input Z, DC Differential Amplifier 20150229 www.national.com 20 LM158QML Photo Voltaic-Cell Amplifier Bridge Current Amplifier 20150230 20150233 High Input Z Adjustable-Gain DC Instrumentation Amplifier 20150231 21 www.national.com LM158QML Using Symmetrical Amplifiers to Reduce Input Current (General Concept) 20150232 www.national.com 22 Date Released Revision Section Originator Changes 07/12/05 A New release to corporate fomat. L. Lytle 2 MDS datasheets converted into one Corporate datasheet format. MNLM158-X-RH Rev 1C1 & MNLM158-X Rev 1A1 will be archived. 01/09/06 B Typical Single-Supply Applications R. Malone Correct an equation From: V1 + V2 + V3 + V4 To: V1 + V2 - V3 - V4 (right after art -08, pg 12). Reason: To reflect same correction made in commercial data sheet. Revision A will be archived. 01/27/06 C Features, Ordering Information Table and Post Radiation Electrical's Larry McGee Added reference to radiation, NSID's to Ordering Table and Post Rad limits for 100k 10/05/06 D Connection Diagram, page 2 R. Malone Corrected typo title for Ceramic SOIC. Revision C will be Archived 08/21/08 E Features, Ordering Information, Electrical Sections and Notes. Larry McGee Added reference to ELDRS, NSID's to Ordering Table, and ELDRS Electricals. Deleted 50k Rad NSID's and Post Rad table. Revision D will be Archived. 01/13/09 F Ordering Information, ELDRS Electrical Section, Notes 11 and 12 Larry McGee Deleted NSID's LM158AH-QMLV and LM158AWG-QMLV code K. Changed DC and Post Rad ELDRS Electricals. Changed Notes 11 and 12 wording. Revision E will be Archived. 23 www.national.com LM158QML Revision History LM158QML Physical Dimensions inches (millimeters) unless otherwise noted Metal Can Package (H) NS Package Number H08C CERDIP Package (J) NS Package Number J08A www.national.com 24 LM158QML 10LD Ceramic SOIC Package NS Package Number WG10A 25 www.national.com LM158QML Low Power Dual Operational Amplifiers Notes For more National Semiconductor product information and proven design tools, visit the following Web sites at: Products Design Support Amplifiers www.national.com/amplifiers WEBENCH® Tools www.national.com/webench Audio www.national.com/audio App Notes www.national.com/appnotes Clock and Timing www.national.com/timing Reference Designs www.national.com/refdesigns Data Converters www.national.com/adc Samples www.national.com/samples Interface www.national.com/interface Eval Boards www.national.com/evalboards LVDS www.national.com/lvds Packaging www.national.com/packaging Power Management www.national.com/power Green Compliance www.national.com/quality/green Switching Regulators www.national.com/switchers Distributors www.national.com/contacts LDOs www.national.com/ldo Quality and Reliability www.national.com/quality LED Lighting www.national.com/led Feedback/Support www.national.com/feedback Voltage Reference www.national.com/vref Design Made Easy www.national.com/easy PowerWise® Solutions www.national.com/powerwise Solutions www.national.com/solutions Serial Digital Interface (SDI) www.national.com/sdi Mil/Aero www.national.com/milaero Temperature Sensors www.national.com/tempsensors Solar Magic® www.national.com/solarmagic Wireless (PLL/VCO) www.national.com/wireless Analog University® www.national.com/AU THE CONTENTS OF THIS DOCUMENT ARE PROVIDED IN CONNECTION WITH NATIONAL SEMICONDUCTOR CORPORATION (“NATIONAL”) PRODUCTS. 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