RoHS 30PT Series RoHS SEMICONDUCTOR Stansard SCRs, 30A A2 Main Features Symbol Value Unit I T(RMS) 30 A V DRM /V RRM 600 to 1600 V I GT 4 to 50 mA 1 A1 A2 G TO-220AB (non-Insulated) (30PTxxA) 2 3 TO-220AB (lnsulated) (30PTxxAI) A2 DESCRIPTION The 30PT series of silicon controlled rectifiers are high performance glass passivated technology, and are suitable for general purpose applications, where power dissipation are critical such as solid state relay, welding equipment and high power A1 A2 G A1 A2 G TO-3P (non-Insulated) (30PTxxB) TO-3P (Insulated) (30PTxxBI) control. Base on a clip assembly technology, they offer a superior performance in surge current capabilities. A2 A1 A2 2 (A2) G TO-263 (D2PAK) (30PTxxH) TO-247AB (30PTxxC) (G)3 1(A1) ABSOLUTE MAXIMUM RATINGS PARAMETER RMS on-state current full sine wave (180° conduction angle ) Average on-state current (180° conduction angle) Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) I2t Value for fusing TEST CONDITIONS SYMBOL IT(RMS) IT(AV) ITSM VALUE UNIT 30 A TO-3P/TO-247AB T c =100°C TO-220AB/TO-263 T c =95°C TO-220AB insulated/TO-3P insulated T c =80°C TO-3P/TO-247AB T c =100°C TO-220AB/TO-263 T c =95°C TO-220AB insulated/TO-3P insulated T c =80°C F =50 Hz t = 20 ms 400 F =60 Hz t = 16.7 ms 420 I2t t p = 10 ms Critical rate of rise of on-state current IG = 2xlGT, tr≤100ns dI/dt F = 60 Hz Peak gate current IGM Maximum gate power 19 A A 800 A2s T j = 125ºC 50 A/µs T p = 20 µs T j = 125ºC 4 A PGM T p =20µs T j = 125ºC 10 W Average gate power dissipation PG(AV) T j =125ºC 1 W Repetitive peak off-state voltage VDRM VRRM T j =125ºC 600 to 1600 V Repetitive peak reverse voltage Storage temperature range Tstg - 40 to + 150 Tj - 40 to + 125 V RGM 5 ºC Operating junction temperature range Maximum peak reverse gate voltage www.nellsemi.com Page 1 of 6 V RoHS 30PT Series RoHS SEMICONDUCTOR ELECTRICAL SPECIFICATIONS (TJ = 25 ºC unless otherwise specified) SYMBOL Unit 30PTxxxx TEST CONDITIONS IGT Min. 4 Max. 50 Max. 1.3 V Min. 0.2 V mA V D = 12V, R L = 33Ω VGT V D = V DRM , R L = 3.3KΩ, R GK = 220Ω VGD T j = 125°C IH I T = 500mA, Gate open Max. 75 mA IL I G = 1.2×I GT Typ. 40 mA V D = 67% V DRM , Gate open dV/dt V DRM ≤ 800V 500 T j = 125°C V/µs Min. V DRM ≥ 1000V 250 VTM I T = 60A, t P = 380µs T j = 25°C Max. 1.6 V IDRM IRRM V D =V DRM , V R =V RRM T j = 25°C Max. 5 µA R GK = 220Ω T j = 125°C Max. 2 mA Vto Threshold Voltage T j = 125°C Max. 1.27 V Rd Dynamic Resistance T j = 125°C Max. 12 mΩ THERMAL RESISTANCE Rth(j-c) Junction to case (DC) S = 1 cm 2 Rth(j-a) VALUE Parameter SYMBOL Junction to ambient D 2 PAK/TO-220AB/TO-3P/TO-247AB 1.0 TO-3P insulated 1.2 TO-220AB insulated 2.0 TO-263( D 2 PAK) 45 TO-220AB/TO-220AB insulated 60 TO-3P/TO-247AB/TO-3P insulated 50 UNIT °C/W °C/W S=Copper surface under tab PRODUCT SELECTOR VOLTAGE (x x) PART NUMBER SENSITIVITY PACKAGE V 50 mA TO-220AB V V 50 mA D 2 PAK V V V 50 mA TO-3P V V V 50 mA TO-247AB 600 V 800 V 1000 V 1200 V 1600 V 30PTxxA/30PTxxAl V V V V 30PTxxH V V V 30PTxxB/30PTxxBI V V 30PTxxC V V www.nellsemi.com Page 2 of 6 RoHS 30PT Series RoHS SEMICONDUCTOR ORDERING INFORMATION ORDERING TYPE MARKING PACKAGE WEIGHT BASE Q,TY DELIVERY MODE 30PTxxA 30PTxxA TO-220AB 2.0g 50 Tube 30PTxxAI 30PTxxAI TO-220AB (insulated) 2.3g 50 Tube 30PTxxH 30PTxxH TO-263(D 2 PAK) 2.0g 50 Tube 30PTxxB 30PTxxB TO-3P 4.3g 30 Tube 30PTxxBI 30PTxxBI TO-3P insulated 4.8g 30 Tube 30PTxxC 30PTxxC TO-247AB 5g 30 Tube Note: xx = voltage ORDERING INFORMATION SCHEME 30 PT 06 Current 30 = 30A, IT(RMS) SCR series Voltage Code 06 = 600V 08 = 800V 10 = 1000V 12 = 1200V 16 = 1600V Package type A = TO-220AB (non-insulated) AI = TO-220AB ( insulated) B = TO-3P (non-insulated) BI = TO-3P ( insulated) C = TO-247AB H = TO-263 (D 2 PAK) Fig.1 Maximum average power dissipation versus average on-state current. Fig.2 Correlation between maximum average power dissipation and maximum allowable temperature P(W) T case (°C) P(W) 50 50 R th =1°C/W DC 40 α=180° R th =0°C/W 40 α=180° 50 (T amb and T lead ) 30 30 α=120° α=90° 75 α=60° 20 20 α=30° 360° 10 0 5 10 www.nellsemi.com 15 20 R th =2°C/W α I T(RMS) (A) 0 100 R th =3°C/W 10 25 30 T amb (°C) 35 Page 3 of 6 0 0 20 40 60 80 100 120 140 125 RoHS 30PT Series RoHS SEMICONDUCTOR Fig.3 RMS on-state current versus case temperature. Fig.4 Relative variation of thermal impedance versus pulse duration. K=[Zth(j-c)/Rth(j-c)] IT(RMS) (A) 35 1.00 TO-3P TO-247AB 30 Z th(j-c) 25 0.10 TO-220AB TO-263 20 Z th(j-a) TO-220AB insulated TO-3P insulated 15 0.01 10 t P (s) 5 T case (°C) 0 0 25 75 50 100 125 0.0 1E-3 Fig.5 Relative variation of gate trigger current versus junction temperature. 1E-2 1E+0 1E-1 1E+1 1E+2 1E+3 Fig.6 Surge peak on-state current versus number of cycles. ITSM (A) l GT , l H , l L [T j ] / l GT ,l H ,l L [T j =25°C] 2.5 500 2.0 400 t p = 10ms One cycle l GT 1.5 300 T j initial = 25°C 1.0 200 l H &l L 0.5 100 T j (°C) 0.0 -40 -30 -20 -10 Number of cycles 0 0 10 1 10 20 30 40 50 60 70 80 90 100 110 120 130 100 1000 Fig.8 On-state characteristics (maximum values) Fig.7 Non-repetitive surge peak on-state current and corresponding value of l 2 t versus sinusoidal pulse width ITSM (A), l2t (A2s) ITM (A) 2000 1000 2 pulse with t p < 10 ms, and corresponding values of l t ITSM 1000 T j = max T j initial = 25°C 100 l 2t 10 T j = 25°C 200 V TM (V) T p (ms) 1 www.nellsemi.com 2 5 T j = max.: V to =1.27V R d = 12mΩ 1 10 Page 4 of 6 1 2 3 4 5 6 RoHS 30PT Series RoHS SEMICONDUCTOR Case Style TO-220AB 10.54 (0.415) MAX. 9.40 (0.370) 9.14 (0.360) 4.70 (0.185) 4.44 (0.1754) 3.91 (0.154) 3.74 (0.148) 1.39 (0.055) 1.14 (0.045) 2.87 (0.113) 2.62 (0.103) 3.68 (0.145) 3.43 (0.135) 1 PIN 2 16.13 (0.635) 15.87 (0.625) 3 4.06 (0.160) 3.56 (0.140) 15.32 (0.603) 14.55 (0.573) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 2.79 (0.110) 2.54 (0.100) 1.45 (0.057) 1.14 (0.045) 2.67 (0.105) 2.41 (0.095) 2.65 (0.104) 2.45 (0.096) 14.22 (0.560) 13.46 (0.530) 0.90 (0.035) 0.70 (0.028) 0.56 (0.022) 0.36 (0.014) 5.20 (0.205) 4.95 (0.195) TO-3P RoHS 2 (A2) (G)3 1(A1) www.nellsemi.com Page 5 of 6 RoHS 40PT Series RoHS SEMICONDUCTOR Case Style TO-263(D 2 PAK) 10.45 (0.411) 9.65 (0.380) 4.83 (0.190) 4.06 (0.160) 1.40 (0.055) 1.14 (0.045) 6.22 (0.245) 1.40 (0.055) 1.19 (0.047) 9.14 (0.360) 8.13 (0.320) 15.85 (0.624) 15.00 (0.591) 0 to 0.254 (0 to 0.01) 2.79 (0.110) 2.29 (0.090) 0.940 (0.037) 0.686 (0.027) 0.53 (0.021) 0.36 (0.014) 2.67 (0.105) 2.41 (0.095) 3.56 (0.140) 2.79 (0.110) 5.20 (0.205) 4.95 (0.195) TO-247AB 4.69 (0.185) 5.31 (0.209) 1.49 (0.059) 2.49 (0.098) 15.49 (0.610) 16.26 (0.640) Anode 20.80 (0.819) 21.46 (0.845) 3.55 (0.138) 3.81 (0.150) 1 4.50 (0.177)Max 0.40 (0.016) 0.79 (0.031) 19.81 (0.780) 20.32 (0.800) RoHS 5.38 (0.212) 6.20 (0.244) 16.15 (0.242) 2 3 2.87 (0.113) 3.12 (0.123) 1.65 (0.065) (TYP.) 2.13 (0.084) 1.01 (0.040) 1.40 (0.055) (TYP.) 2.21 (0.087) 2.59 (0.102) 5.45 (0.215) 5.45 (0.215) 2 (A2) (G)3 1(A1) www.nellsemi.com Page 6 of 6