RoHS 20PT Series RoHS SEMICONDUCTOR Stansard SCRs, 20A Main Features 2 Symbol Value Unit I T(RMS) 20 A V DRM /V RRM 600 to 1000 V I GT 3 to 25 mA 1 2 1 3 2 3 TO-220AB (Non-lnsulated) TO-220AB (lnsulated) (20PTxxA) (20PTxxAI) A2 DESCRIPTION The 20PT series of silicon controlled rectifiers are high performance glass passivated technology, and are suitable for general purpose applications. 2 (A2) A1 A2 G TO-263 (D2PAK) Using clip assembly technology, they provide a superior performance in surge current capabilities. (G)3 1(A1) (20PTxxH) ABSOLUTE MAXIMUM RATINGS PARAMETER RMS on-state current full sine wave (180° conduction angle ) IT(RMS) Average on-state current (180° conduction angle) IT(AV) Non repetitive surge peak on-state current (full cycle, Tj initial = 25°C) ITSM I2t Value for fusing TEST CONDITIONS SYMBOL VALUE UNIT 20 A 13 A TO-263/TO-220AB Tc=100°C TO-220AB insulated Tc=80°C TO-263/TO-220AB Tc=100°C TO-220AB insulated Tc=80°C F =50 Hz t = 20 ms 200 F =60 Hz t = 16.7 ms 220 t p = 10 ms I2t A 200 A2s Critical rate of rise of on-state current IG = 2xlGT, tr≤100ns dI/dt F = 60 Hz T j = 125ºC 50 A/µs Peak gate current IGM T p = 20 µs T j = 125ºC 4 A Maximum gate power PGM T p =20µs T j = 125ºC 10 W T j =125ºC 1 W T j =125ºC 600 to 1000 V Average gate power dissipation PG(AV) Repetitive peak off-state voltage VDRM Repetitive peak reverse voltage VRRM Storage temperature range Operating junction temperature range www.nellsemi.com Tstg - 40 to + 150 Tj - 40 to + 125 ºC Page 1 of 5 RoHS 20PT Series RoHS SEMICONDUCTOR ELECTRICAL SPECIFICATIONS SYMBOL (TJ = 25 ºC unless otherwise specified) 20PTxxxx TEST CONDITIONS Min. 3 Max. 25 Max. 1.3 V Min. 0.2 V IGT V D = 12V, R L = 33Ω VGT V D = V DRM , R L = 3.3KΩ VGD T j = 125°C R GK = 220Ω Unit mA IH I T = 500mA, Gate open Max. 40 mA IL I G = 1.2×I GT Min. 60 mA V D = 67% V DRM , Gate open T j = 125°C Min. 500 V/µs VTM I T = 40A, t P = 380µs T j = 25°C Max. 1.6 V IDRM IRRM V D =V DRM , V R =V RRM T j = 25°C Max. 5 µA R GK = 220Ω T j = 125°C Max. 2 mA Vto Threshold Voltage T j = 125°C Max. 0.77 V Rd Dynamic Resistance T j = 125°C Max. 23 mΩ dV/dt THERMAL RESISTANCE Parameter SYMBOL VALUE UNIT 1.05 °C/W D 2 PAK/TO-220AB Rth(j-c) Junction to case (DC) Rth(j-a) S = 1 cm 2 Junction to ambient TO-220AB insulated 2.1 TO-263( D 2 PAK) 45 TO-220AB/TO-220AB insulated 60 °C/W S=Copper surface under tab PRODUCT SELECTOR VOLTAGE (x x) PART NUMBER SENSITIVITY PACKAGE V 25 mA TO-220AB V 25 mA D 2 PAK 600 V 800 V 1000 V 20PTxxA/20PTxxAl V V 20PTxxH V V ORDERING INFORMATION ORDERING TYPE MARKING PACKAGE WEIGHT BASE Q,TY DELIVERY MODE 20PTxxA 20PTxxA TO-220AB 2.0g 50 Tube 20PTxxAI 20PTxxAI TO-220AB (insulated) 2.3g 50 Tube 20PTxxH 20PTxxH TO-263(D 2 PAK) 2.0g 50 Tube Note: xx = voltage www.nellsemi.com Page 2 of 5 RoHS 20PT Series RoHS SEMICONDUCTOR ORDERING INFORMATION SCHEME 20 PT 06 Current 20 = 20A, IT(RMS) SCR series Voltage Code 06 = 600V 08 = 800V 10 = 1000V Package type A = TO-220AB (non-insulated) AI = TO-220AB ( insulated) H = TO-263 (D 2 PAK) Fig.1 Maximum average power dissipation versus average on-state current. Fig.2 Average and D.C. on-state current versus case temperature. P (W) lT(AV)(A) 27 16 α=180° 14 24 18 10 TO-263 12 6 TO-220AB 9 insulated 360° 4 6 2 I T(AV) (A) 0 6 4 2 3 α 8 10 0 12 Fig.3 Average and D.C. on-state current versus ambient temperature. (copper surface under tab: S=1cm 2 ) (D 2 PAK) 4.0 TO-220AB α=180° 15 8 0 D.C. 21 12 T case (°C) 0 25 75 50 100 125 Fig.4 Relative variation of thermal impedance versus pulse duration. lT(AV)(A) K=[Zth/Rth] 1.00 Zth(j-c) 3.5 D.C. 3.0 2.5 0.10 α=180° 2.0 Zth(j-a) 1.5 1.0 0.5 T amb (°C) t P (s) 0.0 0 25 www.nellsemi.com 50 75 100 125 0.01 1E-3 Page 3 of 5 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2 RoHS 20PT Series RoHS SEMICONDUCTOR Fig.5 Relative variation of gate trigger current, holding current and latching current and latching current versus junction temperature. Fig.6 Surge peak on-state current versus number of cycles. l GT , l H , l L [T j ] / l GT ,l H ,l L [T j =25°C] ITSM (A) 2.5 200 180 2.0 tp=20ms 160 l GT 140 1.5 120 Repetitive T case = 100 °C 100 IH & IL 1.0 One cycle Non repetitive T j initial = 25°C 80 60 0.5 40 T J (°C) 20 0.0 Number of cycles 0 -40 -20 0 20 40 60 80 100 120 140 10 1 100 1000 Fig.8 On-state characteristics (maximum values) Fig.7 Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp < 10 ms, and corresponding values of l 2 t 2000 200 T j initial = 25°C 1000 T j max.: V to = 0.77V R d = 23mΩ 100 l TSM T j max dl/dt limitattion 2 l t 100 10 T j = 25°C 10 0.01 t p (ms) 0.10 V TM (V) 1 1.00 0.0 10.00 0.5 1.0 1.5 2.0 Fig.9 Thermal resistance junction to ambient versus copper surface under tab (epoxy printed circuit board Fr4, copper thickness:35 µm)(D 2 PAK) Rth(j-a)(°C/W) 80 70 60 50 40 30 20 10 0 www.nellsemi.com S(cm 2 ) 0 4 8 12 16 20 24 Page 4 of 5 28 32 36 40 2.5 3.0 3.5 4.0 4.5 RoHS 20PT Series RoHS SEMICONDUCTOR Case Style TO-220AB 10.54 (0.415) MAX. 9.40 (0.370) 9.14 (0.360) 4.70 (0.185) 4.44 (0.1754) 3.91 (0.154) 3.74 (0.148) 1.39 (0.055) 1.14 (0.045) 2.87 (0.113) 2.62 (0.103) 3.68 (0.145) 3.43 (0.135) 1 PIN 2 15.32 (0.603) 14.55 (0.573) 16.13 (0.635) 15.87 (0.625) 8.89 (0.350) 8.38 (0.330) 29.16 (1.148) 28.40 (1.118) 3 4.06 (0.160) 3.56 (0.140) 2.79 (0.110) 2.54 (0.100) 1.45 (0.057) 1.14 (0.045) 2.67 (0.105) 2.41 (0.095) 2.65 (0.104) 2.45 (0.096) 14.22 (0.560) 13.46 (0.530) 0.90 (0.035) 0.70 (0.028) 0.56 (0.022) 0.36 (0.014) 5.20 (0.205) 4.95 (0.195) TO-263(D 2 PAK) 10.45 (0.411) 9.65 (0.380) 4.83 (0.190) 4.06 (0.160) 6.22 (0.245) 9.14 (0.360) 8.13 (0.320) RoHS 1.40 (0.055) 1.14 (0.045) 1.40 (0.055) 1.19 (0.047) 15.85 (0.624) 15.00 (0.591) 0 to 0.254 (0 to 0.01) 2.79 (0.110) 2.29 (0.090) 0.940 (0.037) 0.686 (0.027) 0.53 (0.021) 0.36 (0.014) 2.67 (0.105) 2.41 (0.095) 3.56 (0.140) 5.20 (0.205) 4.95 (0.195) 2.79 (0.110) 2 (A2) (G)3 1(A1) www.nellsemi.com Page 5 of 5