IGBT MODULE PDMB75A6 Dual 75A 600V CIRCUIT OUTLINE DRAWING 4- fasten- tab No 110 Dimension(mm) Approximate Weight : 220g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals ELECTRICAL CHARACTERISTICS (Tc=25°C) Characteristic Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time Symbol PDMB75A6 Unit VCES VGES IC ICP PC Tj Tstg VISO 600 +/ - 20 75 150 320 -40 to +150 -40 to +125 2500 V V W °C °C V FTOR 2 N•m Symbol ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff Test Condition A Min. Typ. Max. 4.0 - 2.0 7,500 0.15 0.25 0.2 0.45 1.0 1.0 2.5 8.0 0.3 0.4 0.35 0.7 VCE=600V,VGE=0V VGE=+/- 20V,VCE=0V IC=75A,VGE=15V VCE=5V,IC=75mA VCE=10V,VGE=0V,f=1MHz VCC= 300V RL= 4 ohm RG= 10.1 ohm VGE= +/- 15V FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value DC 1 ms Forward Current Characteristic µs Unit 50 100 A Symbol Test Condition Min. Typ. Max. VF trr IF=75A,VGE=0V IF=75A,VGE=-10V,di/dt=75A/µs - 1.9 0.15 2.4 0.25 Unit V µs Test Condition Min. Typ. Max. Unit Junction to Case - - 0.38 0.80 °C/W Peak Forward Voltage Reverse Recovery Time THERMAL CHARACTERISTICS Characteristic Thermal Impedance IF IFM Unit mA µA V V pF Symbol IGBT DIODE Rth(j-c) PDMB75A6 Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) Fig.1- Output Characteristics (Typical) TC=25℃ 150 VGE =20V 150A I C=30A 125 10V 100 75 9V 50 25 8V Collector to Emitter Voltage V CE (V) 15V Collector Current I C (A) TC=25℃ 16 12V 14 75A 12 10 8 6 4 2 7V 0 0 2 4 6 8 0 10 0 4 Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) Collector to Emitter Voltage V CE (V) 75A 12 10 8 6 4 2 0 4 8 12 16 RL=4Ω TC=25℃ 16 350 14 300 12 250 10 8 200 VCE =300V 150 6 200V 100 2 50 0 20 0 0 75 Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) Cies Coes Cres Switching Time t (μs) Capacitance C (pF) 1000 500 200 100 0.5 1 2 5 10 20 300 V CC=300V R G=10Ω V GE =±15V TC=25℃ 0.9 0.8 2000 0.2 225 Fig.6- Collector Current vs. Switching Time (Typical) 1 VGE =0V f=1MH Z TC=25℃ 5000 50 150 Total Gate Charge Qg (nC) 50000 10000 4 100V Gate to Emitter Voltage V GE (V) 20000 20 50 Collector to Emitter Voltage V CE (V) 100 200 0.7 0.6 0.5 toff 0.4 0.3 ton 0.2 tf 0.1 tr 0 0 20 40 Collector Current IC (A) 60 80 Gate to Emitter Voltage V GE (V) Collector to Emitter Voltage V CE (V) 14 0 16 400 150A IC=30A 12 Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) TC=125℃ 16 8 Gate to Emitter Voltage V GE (V) Collector to Emitter Voltage V CE (V) PDMB75A6 Fig.8- Forward Characteristics of Free Wheeling Diode Fig.7- Series Gate Impedance vs. Switching Time (Typical) 5 VCC=300V IC=75A VG=±15V TC=25℃ TC=25℃ toff 125 tr 1 0.5 tf 0.2 100 75 50 25 0.1 0.05 1 10 0 100 0 1 2 Series Gate Impedance R G (Ω) 3 4 Forward Voltage V F (V) Fig.9- Reverse Recovery Characteristics (Typical) Fig.10- Reverse Bias Safe Operating Area (Typical) 500 500 IF=75A TC=25℃ R G=10Ω VGE =±15V TC≦125℃ 200 100 200 Collector Current I C (A) trr 100 50 20 50 20 10 5 2 1 0.5 I RrM 10 0.2 100 200 300 400 500 0.1 600 0 200 -di/dt (A/μs) 400 Fig.11- Transient Thermal Impedance FRD 5x10 -1 IGBT 2x10 -1 1x10 -1 5x10 -2 2x10 -2 1x10 -2 5x10 -3 TC=25℃ 2x10 -3 1x10 1 Shot Pulse -3 10 -5 600 Collector to Emitter Voltage V CE (V) 1 (℃/W) 0 (J-C) 5 Transient Thermal Impedance Rth Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) TC=125℃ ton Forward Current I F (A) Switching Time t (μs) 2 (Typical) 150 10 -4 10 -3 10 -2 Time t (s) 10 -1 1 10 1 800