IGBT MODULE PHMB600B12 Single 600A 1200V CIRCUIT OUTLINE DRAWING Dimension(mm) Approximate Weight : 650g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Module Base to Heatsink Mounting Torque Bus Bar to Main Terminals ELECTRICAL CHARACTERISTICS (Tc=25°C) Characteristic Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time Symbol PHMB600B12 Unit VCES VGES IC ICP PC Tj Tstg VISO 1200 +/ - 20 600 1200 2770 -40 to +150 -40 to +125 2500 3 1.4 10.5 V V FTOR Symbol ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff M4 M8 Test Condition A W °C °C V N•m Min. Typ. Max. 4.0 - 1.9 33000 0.25 0.40 0.25 0.80 12.0 1.0 2.4 8.0 0.45 0.70 0.35 1.10 VCE=1200V,VGE=0V VGE=+/- 20V,VCE=0V IC=600A,VGE=15V VCE=5V,IC=600mA VCE=10V,VGE=0V,f=1MHz VCC= 600V RL= 1.0 ohm RG= 1.0 ohm VGE= +/- 15V FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value DC 1 ms Forward Current Characteristic µs Unit 600 1200 A Symbol Test Condition Min. Typ. Max. VF trr IF=600A,VGE=0V IF=600A,VGE=-10V,di/dt=1200A/µs - 1.9 0.25 2.4 0.35 Unit V µs Test Condition Min. Typ. Max. Unit Junction to Case - - 0.044 0.085 °C/W Peak Forward Voltage Reverse Recovery Time THERMAL CHARACTERISTICS Characteristic Thermal Impedance IF IFM Unit mA µA V V pF Symbol IGBT DIODE Rth(j-c) PHMB600B12 Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) Fig.1- Output Characteristics (Typical) TC=25℃ 1200 VGE=20V Collector to Emitter Voltage V CE (V) Collector Current I C (A) I C=300A 15V 1000 800 9V 600 400 8V 200 7V 0 0 2 TC=25℃ 16 10V 12V 4 6 8 14 600A 12 10 8 6 4 2 0 10 0 4 Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage V CE (V) Collector to Emitter Voltage V CE (V) 12 10 8 6 4 2 8 12 16 RL=1Ω TC=25℃ 16 700 14 600 12 500 10 8 400 VCE=600V 6 300 400V 200 4 200V 2 100 0 20 0 800 Gate to Emitter Voltage V GE (V) 1600 2400 3200 0 4800 Fig.6- Collector Current vs. Switching Time (Typical) 1.6 200000 VGE=0V f=1MHZ TC=25℃ 100000 Cies VCC=600V R G=0.82Ω VGE=±15V TC=25℃ 1.4 50000 Switching Time t (μs) 1.2 Capacitance C (pF) 4000 Total Gate Charge Qg (nC) Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) 20000 Coes 10000 5000 2000 Cres 0.8 500 0.2 0.2 0.5 1 2 5 10 20 Collector to Emitter Voltage V CE (V) 50 100 200 tf 0.6 0.4 0.1 tOFF 1 1000 200 20 0 tON tr 0 100 200 300 400 Collector Current IC (A) 500 600 Gate to Emitter Voltage V GE (V) 600A 4 16 800 1200A 14 0 12 Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) TC=125℃ 16 0 8 Gate to Emitter Voltage V GE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) IC=300A 1200A PHMB600B12 Fig.8- Forward Characteristics of Free Wheeling Diode (Typical) Fig.7- Series Gate Impedance vs. Switching Time (Typical) 1200 VCC=600V IC=600A VGE=±15V TC=25℃ Switching Time t (μs) 5 ton 1 tr 0.5 tf 0.2 800 600 400 200 0.1 0.1 0.2 0.5 1 2 5 10 0 20 0 1 2 3 Fig.9- Reverse Recovery Characteristics (Typical) Fig.10- Reverse Bias Safe Operating Area (Typical) 1000 5000 I F=600A TC=25℃ R G=0.82Ω VGE=±15V TC≦125℃ 2000 500 1000 trr 500 Collector Current I C (A) 300 4 Forward Voltage V F (V) Series Gate Impedance RG (Ω) 200 100 IRrM 50 200 100 50 20 10 5 2 1 20 0.5 10 0 600 1200 1800 2400 3000 0.2 3600 0 400 800 1200 Collector to Emitter Voltage V CE (V) -di/dt (A/μs) fig11-Tansient Thermal Impedance -1 2x10 Tansient Thermal Impedance Rth (J-C) (ﾟC/W) Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) TC=125℃ 1000 2 0.05 TC=25℃ toff Forward Current I F (A) 10 -1 FRD -2 IGBT 1x10 5x10 2x10 -2 -2 1x10 5x10 2x10 -3 -3 -3 1x10 Tc=25℃ -4 5x10 1 Shot -4 2x10 10 -5 10 -4 10 -3 -2 10 Time t （s） 10 -1 1 10 1 1600