NIEC PDT15116

THYRISTOR MODULE
PDT15116 PDH15116
150A / 1600V
OUTLINE DRAWING
FEATURES
* 108mm Short Size Case
* Isolated Base
* Dual Thyristors or Thyristor and Diode
Cascaded Circuit
* High Surge Capability
* UL Recognized, File No. E187184
TYPICAL APPLICATIONS
PDT
PDH
* Rectified For General Use
Maximum Ratings
Parameter
Repetitive Peak Off-State Voltage
Non Repetitive Peak Off-State Voltage
Repetitive Peak Reverse Voltage
Non Repetitive Peak Reverse Voltage
Approx Net Weight:280g
Symbol
Conditions
Average Rectified Output Current
IO(AV)
RMS On-State Current
IT(RMS)
I Squared t
ITSM
I2t
Critical Rate of Turned-On Current
di/dt
Peak Gate Power
Average Gate Power
Peak Gate Current
Peak Gate Voltage
Peak Gate Reverse Voltage
Operating JunctionTemperature Range
Storage Temperature Range
Isoration Voltage
Case mounting
Mounting torque
Terminals
Value per 1 Arm
PGM
PG(AV)
IGM
VGM
VRGM
Tjw
Tstg
Viso
Ftor
Unit
1600
1700
1600
1700
VDRM
VDSM
VRRM
VRSM
Parameter
Surge On-State Current
Grade
PDT/PDH15116
50Hz Half Sine Wave condition
Tc=73°C
50 Hz Half Sine Wave,1Pulse
Non-Repetitive
2msec to 10msec
VD=2/3VDRM, ITM=2 IO, Tj=125°C
IG=300mA, diG/dt=0.2A/µs
•
V
V
Max Rated
Value
Unit
150
A
235
A
3200
A
51200
A2s
100
A/µs
5
W
1
W
2
A
10
V
5
V
-40 to +125 °C
-40 to +125 °C
Base Plate to Terminals, AC1min
2500
V
M6 Screw
2.5 to 3.5
N•m
M6 Screw
2.5 to 3.5
Electrical • Thermal Characteristics
Symbol
Test Conditions
Peak Off-State Current
Peak Reverse Current
Peak Forward Voltage
IDM
IRM
VTM
Gate Current to Trigger
IGT
Gate Voltage to Trigger
VGT
Gate Non-Trigger Voltage
Critical Rate of Rise of Off-State
Voltage
VGD
VDM= VDRM, Tj= 125°C
VRM= VRRM, Tj= 125°C
ITM= 450A, Tj=25°C
Tj=-40°C
VD=6V,IT=1A
Tj=25°C
Tj=125°C
Tj=-40°C
VD=6V,IT=1A
Tj=25°C
Tj=125°C
VD=2/3VDRM Tj=125°C
Maximum Value.
Min. Typ. Max.
50
50
1.38
300
150
80
5
3
2
0.25
dv/dt
VD=2/3VDRM Tj=125°C
500
tq
ITM=IO,VD=2/3VDRM
dv/dt=20V/µs, VR=100V
-di/dt=20A/µs, Tj=125°C
Characteristics
Turn-Off Time
Turn-On Time
Delay Time
Rise Time
Latching Current
Holding Current
Thermal Resistance
Value Per 1Arm
tgt
td
tr
IL
IH
Rth(j-c)
VD=2/3VDRM Tj=125°C
IG=300mA, diG/dt=0.2A/µs
Tj=25°C
Tj=25°C
Junction to Case
Base Plate to Heat Sink
Rth(c-f)
with Thermal Compound
Unit
mA
mA
V
mA
V
V
V/µs
100
µs
6
2
4
120
80
µs
µs
µs
mA
0.25
0.15
°C/W
PDT/PDH15116 OUTLINE DRAWING (Dimensions in mm)
ON-STATE CURRENT VS. VOLTAGE
PDT/PDH15116
5000
2000
1000
INSTANTANEOUS ON-STATE CURRENT (A)
500
200
100
50
20
Tj=25°C
Tj=125°C
10
5
2
0
1
2
3
INSTANTANEOUS ON-STATE VOLTAGE (V)
4
5
AVERAGE ON-STATE POWER DISSIPATION
for
PDT/PDH15116
AVERAGE ON-STATE POWER DISSIPATION (W)
300
D.C.
250
θ =180°
θ =180°
120°
200
120°
90°
60°
150
90°
60°
30°
30°
100
50
I TSM
0.02s
0
0
40
80
120
160
200
240
AVERAGE ON-STATE CURRENT (A)
0°
180°
θ
CONDUCTION ANGLE
AVERAGE ON-STATE CURRENT VS. CASE TEMPERATURE
(50Hz SINUSOIDAL CURRENT WAVEFORM)
160
PDT/PDH15116
θ=180°
AVERAGE ON-STATE CURRENT (A)
140
120°
120
90°
100
60°
80
30°
60
40
20
0
0
25
50
75
CASE TEMPERATURE (°C)
100
125
0°
180°
θ
CONDUCTION ANGLE
AVERAGE ON-STATE CURRENT VS. CASE TEMPERATURE
(50Hz RECTANGULAR CURRENT WAVEFORM)
D.C.
240
AVERAGE ON-STATE CURRENT (A)
PDT/PDH15116
200
θ=180°
160
120°
90°
120
60°
80
30°
40
0
0
25
50
75
CASE TEMPERATURE (°C)
100
125
-40 C
25 C
12 5C
P GM =5W
f >50Hz
duty< 20%
SURGE CURRENT RATINGS
f=50Hz,Harf Sine Wave,Non-Repetitive,On Load
PDT/PDH15116
3500
3000
SURGE ON-STATE CURRENT (A)
2500
2000
1500
1000
500
I TSM
0.02s
0
0.02
0.05
0.1
0.2
TIME (s)
0.5
1
2