NIEC PDT2018

THYRISTOR MODULE
PDT2018 PDH2018
200A / 800V
OUTLINE DRAWING
FEATURES
* 108mm Short Size Case
* Isolated Base
* Dual Thyristors or Thyristor and
Diode Cascaded Circuit
* High Surge Capability
* UL Recognized, File No. E187184
TYPICAL APPLICATIONS
PDT
PDH
* AC phase control
Maximum Ratings
Parameter
Repetitive Peak Off-State Voltage
Non Repetitive Peak Off-State Voltage
Repetitive Peak Reverse Voltage
Non Repetitive Peak Reverse Voltage
Approx Net Weight:280g
Symbol
IO(AV)
RMS On-State Current
IT(RMS)
I Squared t
800
960
800
960
Conditions
Average Rectified Output Current
IFSM
I2t
Critical Rate of Turned-On Current
di/dt
Peak Gate Power
Average Gate Power
Peak Gate Current
Peak Gate Voltage
Peak Gate Reverse Voltage
Operating JunctionTemperature Range
Storage Temperature Range
Isoration Voltage
Case mounting
Mounting torque
Terminals
Value per 1 Arm
PGM
PG(AV)
IGM
VGM
VRGM
Tjw
Tstg
Viso
Ftor
Unit
PDT/PDH2018
VDRM
VDSM
VRRM
VRSM
arameter
Surge Forward Current
Grade
50Hz Half Sine Wave condition
Tc=65°C
50 Hz Half Sine Wave,1cycle
Non-Repetitive
2msec to 10msec
VD=2/3VDRM, ITM=2 IO, Tj=125°C
IG=300mA, diG/dt=0.2A/µs
•
V
V
Max Rated
Value
Unit
200
A
314
A
4000
A
80000
A2s
100
A/µs
5
W
1
W
2
A
10
V
5
V
-40 to +125 °C
-40 to +125 °C
Base Plate to Terminals, AC1min
2500
V
M6 Screw
2.5 to 3.5
N•m
M6 Screw
2.5 to 3.5
Electrical • Thermal Characteristics
Symbol
Test Conditions
Peak Off-State Current
Peak Reverse Current
Peak On-State Voltage
IDM
IRM
VTM
Gate Current to Trigger
IGT
Gate Voltage to Trigger
VGT
Gate Non-Trigger Voltage
Critical Rate of Rise of Off-State
Voltage
VGD
VDM= VDRM, Tj=125°C
VRM= VRRM, Tj= 125°C
ITM= 600A, Tj=25°C
Tj=-40°C
VD=6V,IT=1A
Tj=25°C
Tj=125°C
Tj=-40°C
VD=6V,IT=1A
Tj=25°C
Tj=125°C
VD=2/3VDRM Tj=125°C
Maximum Value.
Min. Typ. Max.
30
30
1.34
300
150
80
5
3
2
0.25
VD=2/3VDRM Tj=125°C
500
Characteristics
Turn-Off Time
Turn-On Time
Delay Time
Rise Time
Latching Current
Holding Current
Thermal Resistance
Value Per 1Arm
dv/dt
ITM=IO,VD=2/3VDRM
dv/dt=20V/µs, VR=100V
-di/dt=20A/µs, Tj=125°C
tgt
Tj=25°C, ITM=IT(RMS)
VD=2/3VDRM, IG=300mA
td
diG/dt=0.2A/µs
tr
IL
Tj=25°C
IH
Tj=25°C
Rth(j-c) Junction to Case
Base Plate to Heat Sink
Rth(c-f)
with Thermal Compound
tq
Unit
mA
mA
V
mA
V
V
V/µs
100
µs
6
2
4
100
60
µs
µs
µs
mA
0.23
0.15
°C/W
PDT/PDH2018 OUTLINE DRAWING (Dimensions in mm)
ON-STATE CURRENT VS. VOLTAGE
PDT/PDH2018
5000
2000
1000
INSTANTANEOUS ON-STATE CURRENT (A)
500
200
100
50
20
Tj=25°C
Tj=125°C
10
5
2
0
1
2
3
INSTANTANEOUS ON-STATE VOLTAGE (V)
4
AVERAGE ON-STATE POWER DISSIPATION
for
PDT/PDH2018
AVERAGE ON-STATE POWER DISSIPATION (W)
350
D.C.
300
θ =180°
θ =180°
120°
120°
90°
250
200
90°
60°
60°
150
30°
30°
100
I TSM
50
0.02s
0
0
50
100
150
200
250
300
350
AVERAGE ON-STATE CURRENT (A)
0°
180°
θ
CONDUCTION ANGLE
AVERAGE ON-STATE CURRENT VS. CASE TEMPERATURE
(50Hz SINUSOIDAL CURRENT WAVEFORM)
θ=180°
200
AVERAGE ON-STATE CURRENT (A)
PDT/PDH2018
120°
160
90°
120
60°
80
30°
40
0
0
25
50
75
CASE TEMPERATURE (°C)
100
125
0°
180°
θ
CONDUCTION ANGLE
AVERAGE ON-STATE CURRENT VS. CASE TEMPERATURE
(50Hz RECTANGULAR CURRENT WAVEFORM)
350
PDT/PDH2018
D.C.
AVERAGE ON-STATE CURRENT (A)
300
250
θ=180°
200
120°
90°
150
60°
100
30°
50
0
0
25
50
75
CASE TEMPERATURE (°C)
100
125
-40 C
25 C
12 5C
P GM =5W
f >50Hz
duty< 20%
SURGE CURRENT RATINGS
f=50Hz,Harf Sine Wave,Non-Repetitive,Tj=125℃
PDT/PDH2018
4500
4000
3500
SURGE ON-STATE CURRENT (A)
3000
2500
2000
1500
1000
500
I TSM
0.02s
0
0.02
0.05
0.1
0.2
TIME (s)
0.5
1
2