TENTATIVE IGBT MODULE PHMB1200B12 Single 1200A 1200V CIRCUIT OUTLINE DRAWING 4- fasten- tab No 110 Dimension(mm) Approximate Weight : 1,200g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Module Base to Heat sink Mounting Torque Bus Bar to Main Terminals ELECTRICAL CHARACTERISTICS (Tc=25°C) Characteristic Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Turn-on Time Switching Time Fall Time Turn-off Time Symbol PHMB1200B12 Unit VCES VGES IC ICP PC Tj Tstg VISO 1200 +/ - 20 1200 2400 5600 -40 to +150 -40 to +125 2500 3 V V FTOR Symbol ICES IGES VCE(sat) VGE(th) Cies tr ton tf toff M4 M8 Test Condition A W °C °C V N•m 1.4 10.5 Min. Typ. Max. 4.0 - 1.9 100000 0.25 0.40 0.25 1.00 24 1.0 2.4 8.0 0.45 0.70 0.35 1.50 VCE=1200V,VGE=0V VGE=+/- 20V,VCE=0V IC=1200A,VGE=15V VCE=5V,IC=400mA VCE=10V,VGE=0V,f=1MHz VCC= 600V RL= 0.5 ohm RG= 0.33 ohm VGE= +/- 15V FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value DC 1 ms Forward Current Characteristic µs Unit 1200 2400 A Symbol Test Condition Min. Typ. Max. VF trr IF=1200A,VGE=0V IF=1200A,VGE=-10V,di/dt=2400A/µs - 1.9 0.4 2.4 0.5 Unit V µs Peak Forward Voltage Reverse Recovery Time THERMAL CHARACTERISTICS Characteristic Thermal Impedance IF IFM Unit mA µA V V pF IGBT DIODE Symbol Test Condition Min. Typ. Max. Unit Rth(j-c) Junction to Case - - 0.022 0.043 °C/W TENTATIVE PHMB1200B12 Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) Fig.1- Output Characteristics (Typical) TC=25℃ 2400 Collector Current I C (A) IC=600A 15V 2000 1600 9V 1200 800 8V 400 7V 0 0 2 TC=25℃ 16 10V 12V 4 6 8 Collector to Emitter Voltage V CE (V) VGE=20V 14 1200A 12 10 8 6 4 2 0 10 0 4 Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) Collector to Emitter Voltage V CE (V) 12 10 8 6 4 2 8 20 16 12 16 RL=0.5Ω TC =25℃ 700 14 600 12 500 10 8 400 VCE=600V 6 300 400V 200 4 200V 2 100 0 10000 0 20 0 2000 Gate to Emitter Voltage V GE (V) 4000 6000 8000 Total Gate Charge Qg (nC) . Fig.6- Collector Current vs. Switching Time (Typical) Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) 1.6 500000 200000 V GE=0V f=1MHZ TC=25℃ Cies V CC=600V R G= 0.33Ω V GE=±15V TC=25℃ tOFF 1.4 100000 Switching Time t (μs) Capacitance C (pF) 1.2 50000 Coes 20000 10000 Cres 5000 2000 1 0.8 tf 0.6 0.4 1000 200 tON tr 0.2 500 0.1 0.2 0.5 1 2 5 10 20 Collector to Emitter Voltage V CE (V) 50 100 200 0 0 200 400 600 800 Collector Current I C (A) 1000 1200 Gate to Emitter Voltage V GE (V) Collector to Emitter Voltage V CE (V) 2400A 1200A 4 16 800 14 0 12 Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) TC=125℃ 16 0 8 Gate to Emitter Voltage V GE (V) Collector to Emitter Voltage V CE (V) IC=600A 2400A TENTATIVE PHMB1200B12 Fig.8- Forward Characteristics of Free Wheeling Diode Fig.7- Series Gate Impedance vs. Switching Time (Typical) VCC=600V IC=1200A VGE=±15V TC=25℃ Switching Time t (μs) 5 (Typical) 2400 tr 1 tf 0.5 0.2 1600 1200 800 400 0.1 0.1 0.2 0.5 1 2 5 10 0 20 0 1 2 3 4 Forward Voltage V F (V) Series Gate Impedance RG (Ω) Fig.9- Reverse Recovery Characteristics (Typical) Fig.10- Reverse Bias Safe Operating Area (Typical) 5000 2000 Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) TC=125℃ 2000 ton 2 0.05 TC=25℃ toff Forward Current I F (A) 10 IF=1200A TC=25℃ R G=0.33Ω V GE=±15V TC ≦125℃ 2000 1000 500 500 Collector Current I C (A) 1000 trr IRrM 200 200 100 50 20 10 5 2 1 0.5 100 0.2 2400 3600 4800 6000 7200 0 400 800 Fig.11- Transient Thermal Impedance (℃/W) 2x10 -1 1x10 -1 FRD 5x10 -2 IGBT 2x10 -2 1x10 -2 5x10 -3 2x10 -3 1x10 -3 5x10 -4 TC=25℃ 2x10 -4 1x10 -4 10 -5 1200 Collector to Emitter Voltage V CE (V) -di/dt (A/μs) (J-C) 1200 Transient Thermal Impedance Rth 0 1 Shot Pulse 10 -4 10 -3 10 -2 Time t (s) 10 -1 1 10 1 1600