PCHMB50A6A IGBT MODULE Chopper 50A 600V CIRCUIT OUTLINE DRAWING 2- fasten- tab No 110 Dimension(mm) Approximate Weight : 220g MAXMUM RATINGS (Tc=25°C) Item Collector-Emitter Voltage Gate - Emitter Voltage DC 1 ms Collector Current Collector Power Dissipation Junction Temperature Range Storage Temperature Range Isolation Voltage Terminal to Base AC, 1 min.) Module Base to Heat sink Bus Bar to Main Terminals Mounting Torque Symbol PCHMB50A6A VCES VGES IC IC PC Tj Tstg VISO 600 +/ - 20 50 100 250 -40 to +150 -40 to +125 2500 FTOR 2.04 Unit V V A W °C °C V N•m ELECTRICAL CHARACTERISTICS (Tc=25°C) Characteristic Symbol Collector-Emitter Cut-Off Current Gate-Emitter Leakage Current Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Input Capacitance Rise Time Switching Time ICES IGES VCE(sat) VGE(th) C ies ｔr ｔon ｔf ｔoff Turn-on Time Fall Time Turn-off Time Test Condition VCE=600V,VGE=0V VGE=+/- 20V,VCE=0V IC=50A,VGE=15V VCE=5V,IC=50mA VCE=10V,VGE=0V,f=1MHz VCC= 300V RL= 6 ohm RG= 15 ohm VGE= +/- 15V Min. Typ. Max. Unit 4.0 − − − − 2.0 5000 0.15 0.25 0.2 0.45 1.0 1.0 2.5 8.0 0.3 0.4 0.35 0.7 mA µA V V pF FREE WHEELING DIODES RATINGS & CHARACTERISTICS (Tc=25°C) Item Symbol Rated Value Forward Current Characteristic DC 1 ms IF IFM Unit 50 100 Symbol Test Condition µs A Min. Typ. Max. Unit Peak Forward Voltage VF IF=50A,VGE=0V - 1.9 2.4 V Reverse Recovery Time trr IF=50A,VGE=-10V,di/dt=50A/µs - 0.15 0.25 µs Min. Typ. Max. Unit - - 0.5 1.0 °C/W THERMAL CHARACTERISTICS Characteristic Thermal Impedance IGBT DIODE Symbol Rth(j-c) Test Condition Junction to Case PCHMB50A6A IGBT MODULE Chopper 50A 600V Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) Fig.1- Output Characteristics (Typical) TC=25℃ 100 VGE =20V IC=20A 80 10V 60 9V 40 20 8V Collector to Emitter Voltage V CE (V) 15V Collector Current I C (A) TC=25℃ 16 12V 100A 14 50A 12 10 8 6 4 2 7V 0 0 2 4 6 8 0 10 0 4 Collector to Emitter Voltage V CE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 16 Collector to Emitter Voltage V CE (V) 12 10 8 6 4 2 4 8 12 16 300 12 250 10 8 200 VCE =300V 6 150 200V 100 2 0 50 Gate to Emitter Voltage V GE (V) 150 0 200 Fig.6- Collector Current vs. Switching Time (Typical) Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) 1 VGE =0V f=1MH Z TC=25℃ Cies Coes Cres 10000 VCC=300V RG=15Ω VGE =±15V TC=25℃ 0.9 0.8 Switching Time t (μs) 5000 Capacitance C (pF) 100 Total Gate Charge Qg (nC) 20000 2000 1000 500 200 100 0.7 0.6 0.5 toff 0.4 0.3 ton tf 0.2 50 20 4 100V 50 0 20 14 tr 0.1 0.2 0.5 1 2 5 10 20 50 Collector to Emitter Voltage V CE (V) 100 200 0 0 20 40 60 Collector Current IC (A) 80 100 Gate to Emitter Voltage V GE (V) Collector to Emitter Voltage V CE (V) 50A 0 20 RL=5Ω TC=25℃ 350 14 0 16 400 100A I C=20A 12 Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) TC=125℃ 16 8 Gate to Emitter Voltage V GE (V) PCHMB50A6A IGBT MODULE Chopper 50A 600V Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) Fig.1- Output Characteristics (Typical) TC=25℃ 100 VGE =20V IC=20A 80 10V 60 9V 40 20 8V Collector to Emitter Voltage V CE (V) 15V Collector Current I C (A) TC=25℃ 16 12V 100A 14 50A 12 10 8 6 4 2 7V 0 0 2 4 6 8 0 10 0 4 Collector to Emitter Voltage V CE (V) Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) 16 Collector to Emitter Voltage V CE (V) 12 10 8 6 4 2 4 8 12 16 300 12 250 10 8 200 VCE =300V 6 150 200V 100 2 0 50 Gate to Emitter Voltage V GE (V) 150 0 200 Fig.6- Collector Current vs. Switching Time (Typical) Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) 1 VGE =0V f=1MH Z TC=25℃ Cies Coes Cres 10000 VCC=300V RG=15Ω VGE =±15V TC=25℃ 0.9 0.8 Switching Time t (μs) 5000 Capacitance C (pF) 100 Total Gate Charge Qg (nC) 20000 2000 1000 500 200 100 0.7 0.6 0.5 toff 0.4 0.3 ton tf 0.2 50 20 4 100V 50 0 20 14 tr 0.1 0.2 0.5 1 2 5 10 20 50 Collector to Emitter Voltage V CE (V) 100 200 0 0 20 40 60 Collector Current IC (A) 80 100 Gate to Emitter Voltage V GE (V) Collector to Emitter Voltage V CE (V) 50A 0 20 RL=5Ω TC=25℃ 350 14 0 16 400 100A I C=20A 12 Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) TC=125℃ 16 8 Gate to Emitter Voltage V GE (V)