INFRA-RED Item No.: 128144 1. This specification applies to GaAlAs / GaAlAs LED Chips 2. Structure 2.1 Mesa structure 2.2 Electrodes 3. Outlines (dimensions in microns) p-side (anode) n-side (cathode) Au alloy Au alloy n-Electrode n-Epitaxy GaAlAs 365 120 p-Epitaxy GaAlAs 330 365 p-Electrode Wire bond contacts can also have a square 4. Electrical and optical characteristics (T=25°C) Parameter Symbol Conditions Forward voltage VF IF = 20 mA Reverse current IR VR = 5 V Φe IF = 20 mA IF = 50 mA IF = 20 mA output Power * Switching time tr, tf min 1,3 3,2 Peak wavelength λP IF = 20 mA Power measurement at OSA on gold plate 5. typ max Unit 1,30 1,50 V 10 µA 1,8 4,5 600 910 mW ns nm Packing Dice on adhesive film with 1) wire bond side on top 2) back contact on top 6. Labeling Type Lot No. Φe typ min max Quantity © 2004 OSA Opto Light GmbH Tel. +49-(0)30-65 76 26 83 Fax +49-(0)30-65 76 26 81 [email protected]