SLIS061C − JULY 1998 − REVISED APRIL 2005 D Low rDS(on) . . . 7 Ω Typ D Avalanche Energy . . . 30 mJ D Eight Power DMOS Transistor Outputs of D D D D D D, N, OR PW PACKAGE (TOP VIEW) VCC SER IN DRAIN0 DRAIN1 DRAIN2 DRAIN3 CLR G 100-mA Continuous Current 250-mA Current Limit Capability ESD Protection . . . 2500 V Output Clamp Voltage . . . 33 V Devices Are Cascadable Low Power Consumption description 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 GND SRCK DRAIN7 DRAIN6 DRAIN5 DRAIN4 RCK SER OUT logic symbol† The TPIC6C595 is a monolithic, medium-voltage, low-current power 8-bit shift register designed for use in systems that require relatively moderate load power such as LEDs. The device contains a built-in voltage clamp on the outputs for inductive transient protection. Power driver applications include relays, solenoids, and other low-current or medium-voltage loads. G RCK CLR SRCK SER IN 8 EN3 10 7 C2 R 15 2 SRG8 C1 1D 2 3 4 DRAIN0 DRAIN1 This device contains an 8-bit serial-in, parallel-out 5 DRAIN2 shift register that feeds an 8-bit D-type storage 6 DRAIN3 register. Data transfers through both the shift and 11 DRAIN4 storage registers on the rising edge of the shift 12 register clock (SRCK) and the register clock DRAIN5 13 (RCK), respectively. The device transfers data out DRAIN6 the serial output (SER OUT) port on the rising 14 DRAIN7 2 edge of SRCK. The storage register transfers data 9 SER OUT to the output buffer when shift register clear (CLR) is high. When CLR is low, the input shift register is † This symbol is in accordance with ANSI/IEEE Std 91-1984 cleared. When output enable (G) is held high, all and IEC Publication 617-12. data in the output buffers is held low and all drain outputs are off. When G is held low, data from the storage register is transparent to the output buffers. When data in the output buffers is low, the DMOS transistor outputs are off. When data is high, the DMOS transistor outputs have sink-current capability. The SER OUT allows for cascading of the data from the shift register to additional devices. This device contains circuits to protect its inputs and outputs against damage due to high static voltages or electrostatic fields. These circuits have been qualified to protect this device against electrostatic discharges (ESD) of up to 2 kV according to MIL-STD-883C, Method 3015; however, it is advised that precautions be taken to avoid application of any voltage higher than maximum-rated voltages to these high-impedance circuits. During storage or handling, the device leads should be shorted together or the device should be placed in conductive foam. In a circuit, unused inputs should always be connected to an appropriated logic voltage level, preferably either VCC or ground. Specific guidelines for handling devices of this type are contained in the publication Guidelines for Handling Electrostatic-Discharge-Sensitive (ESDS) Devices and Assemblies available from Texas Instruments. Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet. Copyright 1998 − 2005, Texas Instruments Incorporated ! "#$ ! %#&'" ($) (#"! " !%$""! %$ *$ $! $+! !#$! !(( ,-) (#" %"$!!. ($! $"$!!'- "'#($ $!. '' %$$!) POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 1 SLIS061C − JULY 1998 − REVISED APRIL 2005 description (continued) Outputs are low-side, open-drain DMOS transistors with output ratings of 33 V and 100 mA continuous sink-current capability. Each output provides a 250-mA maximum current limit at TC = 25°C. The current limit decreases as the junction temperature increases for additional device protection. The device also provides up to 2500 V of ESD protection when tested using the human-body model and the 200-V machine model. The TPIC6C595 is characterized for operation over the operating case temperature range of −40°C to 125°C. logic diagram (positive logic) G 8 10 RCK 7 CLR 3 D SRCK SER IN 15 2 C1 D C2 CLR CLR D C1 D C2 CLR CLR D C1 D C2 CLR CLR D C1 D C2 CLR CLR D C1 D C2 CLR CLR D C1 D C2 CLR CLR D C1 D C2 CLR CLR D D C2 CLR C1 CLR 4 5 6 11 12 13 14 16 9 2 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 SER OUT DRAIN0 DRAIN1 DRAIN2 DRAIN3 DRAIN4 DRAIN5 DRAIN6 DRAIN7 GND SLIS061C − JULY 1998 − REVISED APRIL 2005 schematic of inputs and outputs EQUIVALENT OF EACH INPUT TYPICAL OF ALL DRAIN OUTPUTS VCC DRAIN 33 V Input 25 V 20 V 12 V GND GND absolute maximum ratings over recommended operating case temperature range (unless otherwise noted)† Logic supply voltage, VCC (see Note 1) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 V Logic input voltage range, VI . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −0.3 V to 7 V Power DMOS drain-to-source voltage, VDS (see Note 2) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 33 V Continuous source-to-drain diode anode current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 mA Pulsed source-to-drain diode anode current (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500 mA Pulsed drain current, each output, all outputs on, ID, TC = 25°C (see Note 3) . . . . . . . . . . . . . . . . . . . 250 mA Continuous drain current, each output, all outputs on, ID, TC = 25°C . . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA Peak drain current single output, IDM,TC = 25°C (see Note 3) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250 mA Single-pulse avalanche energy, EAS (see Figure 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mJ Avalanche current, IAS (see Note 4) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200 mA Continuous total dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . See Dissipation Rating Table Operating virtual junction temperature range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 150°C Operating case temperature range, TC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −40°C to 125°C Storage temperature range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . −65°C to 150°C Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 260°C † Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. NOTES: 1. All voltage values are with respect to GND. 2. Each power DMOS source is internally connected to GND. 3. Pulse duration ≤ 100 µs and duty cycle ≤ 2%. 4. DRAIN supply voltage = 15 V, starting junction temperature (TJS) = 25°C, L = 1.5 H, IAS = 200 mA (see Figure 4). DISSIPATION RATING TABLE PACKAGE TC ≤ 25°C POWER RATING D 1087 mW 8.7 mW/°C 217 mW N 1470 mW 11.7 mW/°C 294 mW PW 1372 mW 10.976 mW/°C 274 mW DERATING FACTOR ABOVE TC = 25°C POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 TC = 125°C POWER RATING 3 SLIS061C − JULY 1998 − REVISED APRIL 2005 recommended operating conditions Logic supply voltage, VCC High-level input voltage, VIH MIN MAX UNIT 4.5 5.5 V 0.85 VCC Low-level input voltage, VIL V 0.15 VCC V 250 mA Pulsed drain output current, TC = 25°C, VCC = 5 V, all outputs on (see Notes 3 and 5 and Figure 11) Setup time, SER IN high before SRCK↑, tsu (see Figure 2) 20 ns Hold time, SER IN high after SRCK↑, th (see Figure 2) 20 ns Pulse duration, tw (see Figure 2) 40 Operating case temperature, TC −40 ns °C 125 electrical characteristics, VCC = 5 V, TC = 25°C (unless otherwise noted) PARAMETER V(BR)DSX VSD TEST CONDITIONS Drain-to-source breakdown voltage Source-to-drain diode forward voltage ID = 1 mA IF = 100 mA MIN 33 TYP MAX 37 0.85 V 1.2 VOH High-level output voltage, SER OUT IOH = − 20 µA, IOH = − 4 mA, VOL Low-level output voltage, SER OUT IOL = 20 µA, IOL = 4 mA, VCC = 4.5 V VCC = 4.5 V IIH IIL High-level input current Low-level input current VCC = 5.5 V, VCC = 5.5 V, VI = VCC VI = 0 All outputs off 20 200 ICC Logic supply current VCC = 5.5 V All outputs on 150 500 ICC(FRQ) Logic supply current at frequency fSRCK = 5 MHz, All outputs off, CL = 30 pF, See Figures 2 and 6 1.2 5 IN Nominal current VDS(on) = 0.5 V, TC = 85°C, VDS = 30 V, IN = ID, See Notes 5, 6, and 7 90 IDSX Off-state drain current VDS = 30 V, TC = 125°C VCC = 4.5 V VCC = 4.5 V VCC = 5.5 V VCC = 5.5 V, ID = 50 mA, VCC = 4.5 V rDS(on) Static drain-source on-state resistance ID = 50 mA, TC = 125°C, VCC = 4.5 V See Notes 5 and 6 and Figures 7 and 8 ID = 100 mA, VCC = 4.5 V NOTES: 3. 5. 6. 7. 4 4.4 4.49 4 4.2 UNIT V V 0.005 0.1 0.3 0.5 V 1 µA −1 µA A µA mA mA 0.1 0.2 0.15 0.3 6.5 9 9.9 12 6.8 10 µA Ω Pulse duration ≤ 100 µs and duty cycle ≤ 2%. Technique should limit TJ − TC to 10°C maximum. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts. Nominal current is defined for a consistent comparison between devices from different sources. It is the current that produces a voltage drop of 0.5 V at TC = 85°C. POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 SLIS061C − JULY 1998 − REVISED APRIL 2005 switching characteristics, VCC = 5 V, TC = 25°C PARAMETER TEST CONDITIONS MIN TYP MAX UNIT tPLH tPHL Propagation delay time, low-to-high-level output from G 80 ns Propagation delay time, high-to-low-level output from G 50 ns tpd Propagation delay time, SRCK to SEROUT 20 ns tr tf Rise time, drain output 100 ns Fall time, drain output 80 ns ta trr Reverse-recovery-current rise time CL = 30 pF, ID = 75 mA, See Figures 1, 2, and 9 100 IF = 100 mA, di/dt = 10 A/µs, See Notes 5 and 6 and Figure 3 Reverse-recovery time ns 120 NOTES: 5. Technique should limit TJ − TC to 10°C maximum. 6. These parameters are measured with voltage-sensing contacts separate from the current-carrying contacts. thermal resistance PARAMETER TEST CONDITIONS MIN D package RθJA UNIT 115 N package Thermal resistance, junction-to-ambient MAX 85 All 8 outputs with equal power PW package °C/W C/W 108 PARAMETER MEASUREMENT INFORMATION 5V 15 V 7 1 7 15 Word Generator (see Note A) 2 10 8 CLR SRCK 5 4 3 2 1 0 DRAIN 3 −6, 11 −14 Output G 0V 5V SER IN CL = 30 pF (see Note B) RCK 5V G RL = 200 Ω DUT 5V 0V ID VCC SER IN 6 SRCK 0V 5V RCK 0V 5V CLR 0V GND 16 15 V DRAIN1 0.5 V VOLTAGE WAVEFORMS TEST CIRCUIT NOTES: A. The word generator has the following characteristics: tr ≤ 10 ns, tf ≤ 10 ns, tw = 300 ns, pulsed repetition rate (PRR) = 5 kHz, ZO = 50 Ω. B. CL includes probe and jig capacitance. Figure 1. Resistive-Load Test Circuit and Voltage Waveforms POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 5 SLIS061C − JULY 1998 − REVISED APRIL 2005 PARAMETER MEASUREMENT INFORMATION 5V G 5V 50% 50% 0V 15 V tPLH tPHL 1 7 15 Word Generator (see Note A) 2 10 8 VCC CLR SRCK Output ID RL = 200 Ω 3 −6, 11 −14 DUT 24 V 90% 10% 10% tr Output 0.5 V tf SWITCHING TIMES DRAIN SER IN CL = 30 pF (see Note B) RCK G 90% GND 5V 50% SRCK 0V tsu 16 th 5V TEST CIRCUIT SER IN 50% 50% 0V tw INPUT SETUP AND HOLD WAVEFORMS NOTES: A. The word generator has the following characteristics: tr ≤ 10 ns, tf ≤ 10 ns, tw = 300 ns, pulsed repetition rate (PRR) = 5 kHz, ZO = 50 Ω. B. CL includes probe and jig capacitance. Figure 2. Test Circuit, Switching Times, and Voltage Waveforms TP K DRAIN Circuit Under Test 0.1 A 2500 µF 250 V di/dt = 10 A/µs + L = 0.85 mH IF (see Note A) 15 V IF − TP A 0 25% of IRM t2 t1 t3 Driver IRM RG VGG (see Note B) ta 50 Ω trr TEST CIRCUIT CURRENT WAVEFORM NOTES: A. The DRAIN terminal under test is connected to the TP K test point. All other terminals are connected together and connected to the TP A test point. B. The VGG amplitude and RG are adjusted for di/dt = 10 A/µs. A VGG double-pulse train is used to set IF = 0.1 A, where t1 = 10 µs, t2 = 7 µs, and t3 = 3 µs. Figure 3. Reverse-Recovery-Current Test Circuit and Waveforms of Source-to-Drain Diode 6 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 SLIS061C − JULY 1998 − REVISED APRIL 2005 PARAMETER MEASUREMENT INFORMATION 5V 15 V tw 1 7 CLR VCC 30 Ω Word Generator (see Note A) 2 10 8 DUT See Note B 1.5 H SER IN 3 −6, 11 −14 0V IAS = 200 mA ID VDS DRAIN RCK G 5V Input ID 15 SRCK tav GND V(BR)DSX = 33 V MIN VDS 16 VOLTAGE AND CURRENT WAVEFORMS SINGLE-PULSE AVALANCHE ENERGY TEST CIRCUIT NOTES: A. The word generator has the following characteristics: tr ≤ 10 ns, tf ≤ 10 ns, ZO = 50 Ω. B. Input pulse duration, tw, is increased until peak current IAS = 200 mA. Energy test level is defined as EAS = IAS × V(BR)DSX × tav/2 = 30 mJ. Figure 4. Single-Pulse Avalanche Energy Test Circuit and Waveforms TYPICAL CHARACTERISTICS PEAK AVALANCHE CURRENT vs TIME DURATION OF AVALANCHE SUPPLY CURRENT vs FREQUENCY 6 1 VCC = 5 V TC = −40C° to 125°C 5 ICC − Supply Current − mA IAS − Peak Avalanche Current − A TC = 25°C 0.1 4 3 2 1 0.01 0.1 1 10 0 0.1 1 10 tav − Time Duration of Avalanche − ms f − Frequency − MHz Figure 5 Figure 6 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 100 7 SLIS061C − JULY 1998 − REVISED APRIL 2005 TYPICAL CHARACTERISTICS 30 VCC = 5 V See Note A 25 TC = 125°C 20 15 10 TC = 25°C 5 TC = − 40°C 0 50 70 90 110 130 150 170 190 210 250 STATIC DRAIN-TO-SOURCE ON-STATE RESISTANCE vs LOGIC SUPPLY VOLTAGE rDS(on) − Static Drain-to-Source On-State Resistance − Ω rDS(on) − Drain-to-Source On-State Resistance − Ω DRAIN-TO-SOURCE ON-STATE RESISTANCE vs DRAIN CURRENT 12 10 8 TC = 25°C 6 4 TC = − 40°C 2 0 4.0 4.5 5.0 5.5 6.0 6.5 ID − Drain Current − mA VCC − Logic Supply Voltage − V Figure 7 Figure 8 SWITCHING TIME vs CASE TEMPERATURE 140 ID = 75 mA See Note A tr Switching Time − ns 120 100 tf 80 tPLH 60 tPHL 40 20 0 −50 −25 0 25 50 75 100 TC − Case Temperature − °C Figure 9 NOTE A: Technique should limit TJ − TC to 10°C maximum. 8 ID = 50 mA See Note A TC = 125°C POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 125 7.0 SLIS061C − JULY 1998 − REVISED APRIL 2005 MAXIMUM CONTINUOUS DRAIN CURRENT OF EACH OUTPUT vs NUMBER OF OUTPUTS CONDUCTING SIMULTANEOUSLY MAXIMUM PEAK DRAIN CURRENT OF EACH OUTPUT vs NUMBER OF OUTPUTS CONDUCTING SIMULTANEOUSLY 0.25 VCC = 5 V 0.20 0.15 TC = 25°C 0.10 TC = 100°C TC = 125°C 0.05 0.00 1 2 3 4 5 6 7 8 ID − Maximum Peak Drain Current of Each Output − A ID − Maximum Continuous Drain Current of Each Output − A THERMAL INFORMATION 0.30 d = 10% 0.25 d = 20% 0.20 d = 50% 0.15 d = 80% 0.10 VCC = 5 V TC = 25°C d = tw/tperiod = 1 ms/tperiod 0.05 0.00 1 2 3 4 5 6 7 8 N − Number of Outputs Conducting Simultaneously N − Number of Outputs Conducting Simultaneously Figure 10 Figure 11 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 9 SLIS061C − JULY 1998 − REVISED APRIL 2005 THERMAL INFORMATION D PACKAGE† NORMALIZED JUNCTION - TO -AMBIENT THERMAL RESISTANCE vs PULSE DURATION RθJA − Normalized Junction-to-Ambient Thermal Resistance − °C/W 10 DC Conditions 1 d = 0.5 d = 0.2 d = 0.1 0.1 d = 0.05 d = 0.02 d = 0.01 0.01 Single Pulse 0.001 tc tw ID 0 0.0001 0.0001 0.001 0.01 0.1 tw − Pulse Duration − s † Device mounted on FR4 printed-circuit board with no heat sink NOTES: ZθA(t) = r(t) RθJA tw = pulse duration tc = cycle time d = duty cycle = tw/tc Figure 12 10 POST OFFICE BOX 655303 • DALLAS, TEXAS 75265 1 10 PACKAGE OPTION ADDENDUM www.ti.com 24-Jan-2013 PACKAGING INFORMATION Orderable Device Status (1) Package Type Package Pins Package Qty Drawing Eco Plan Lead/Ball Finish (2) MSL Peak Temp Op Temp (°C) Top-Side Markings (3) (4) TPIC6C595D ACTIVE SOIC D 16 40 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 TPIC6C595 TPIC6C595DG4 ACTIVE SOIC D 16 40 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 6C595 TPIC6C595DR ACTIVE SOIC D 16 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 TPIC6C595 TPIC6C595DRG4 ACTIVE SOIC D 16 2500 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 6C595 TPIC6C595N ACTIVE PDIP N 16 25 Pb-Free (RoHS) CU NIPDAU N / A for Pkg Type -40 to 125 TPIC6C595 TPIC6C595PW ACTIVE TSSOP PW 16 90 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM -40 to 125 6C595PW TPIC6C595PWG4 ACTIVE TSSOP PW 16 90 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPIC6C595PWR ACTIVE TSSOP PW 16 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM TPIC6C595PWRG4 ACTIVE TSSOP PW 16 2000 Green (RoHS & no Sb/Br) CU NIPDAU Level-1-260C-UNLIM 6C595PW -40 to 125 6C595PW 6C595PW (1) The marketing status values are defined as follows: ACTIVE: Product device recommended for new designs. LIFEBUY: TI has announced that the device will be discontinued, and a lifetime-buy period is in effect. NRND: Not recommended for new designs. Device is in production to support existing customers, but TI does not recommend using this part in a new design. PREVIEW: Device has been announced but is not in production. Samples may or may not be available. OBSOLETE: TI has discontinued the production of the device. (2) Eco Plan - The planned eco-friendly classification: Pb-Free (RoHS), Pb-Free (RoHS Exempt), or Green (RoHS & no Sb/Br) - please check http://www.ti.com/productcontent for the latest availability information and additional product content details. TBD: The Pb-Free/Green conversion plan has not been defined. Pb-Free (RoHS): TI's terms "Lead-Free" or "Pb-Free" mean semiconductor products that are compatible with the current RoHS requirements for all 6 substances, including the requirement that lead not exceed 0.1% by weight in homogeneous materials. Where designed to be soldered at high temperatures, TI Pb-Free products are suitable for use in specified lead-free processes. Pb-Free (RoHS Exempt): This component has a RoHS exemption for either 1) lead-based flip-chip solder bumps used between the die and package, or 2) lead-based die adhesive used between the die and leadframe. The component is otherwise considered Pb-Free (RoHS compatible) as defined above. Green (RoHS & no Sb/Br): TI defines "Green" to mean Pb-Free (RoHS compatible), and free of Bromine (Br) and Antimony (Sb) based flame retardants (Br or Sb do not exceed 0.1% by weight in homogeneous material) Addendum-Page 1 Samples PACKAGE OPTION ADDENDUM www.ti.com 24-Jan-2013 (3) MSL, Peak Temp. -- The Moisture Sensitivity Level rating according to the JEDEC industry standard classifications, and peak solder temperature. (4) Only one of markings shown within the brackets will appear on the physical device. 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Addendum-Page 2 PACKAGE MATERIALS INFORMATION www.ti.com 14-Mar-2013 TAPE AND REEL INFORMATION *All dimensions are nominal Device Package Package Pins Type Drawing SPQ Reel Reel A0 Diameter Width (mm) (mm) W1 (mm) B0 (mm) K0 (mm) P1 (mm) W Pin1 (mm) Quadrant TPIC6C595DR SOIC D 16 2500 330.0 16.4 6.5 10.3 2.1 8.0 16.0 Q1 TPIC6C595DR SOIC D 16 2500 330.0 16.4 6.5 10.3 2.1 8.0 16.0 Q1 TPIC6C595DRG4 SOIC D 16 2500 330.0 16.4 6.5 10.3 2.1 8.0 16.0 Q1 TPIC6C595PWR TSSOP PW 16 2000 330.0 12.4 6.9 5.6 1.6 8.0 12.0 Q1 TPIC6C595PWRG4 TSSOP PW 16 2000 330.0 12.4 6.9 5.6 1.6 8.0 12.0 Q1 Pack Materials-Page 1 PACKAGE MATERIALS INFORMATION www.ti.com 14-Mar-2013 *All dimensions are nominal Device Package Type Package Drawing Pins SPQ Length (mm) Width (mm) Height (mm) TPIC6C595DR SOIC D 16 2500 367.0 367.0 38.0 TPIC6C595DR SOIC D 16 2500 367.0 367.0 38.0 TPIC6C595DRG4 SOIC D 16 2500 367.0 367.0 38.0 TPIC6C595PWR TSSOP PW 16 2000 367.0 367.0 35.0 TPIC6C595PWRG4 TSSOP PW 16 2000 367.0 367.0 35.0 Pack Materials-Page 2 IMPORTANT NOTICE Texas Instruments Incorporated and its subsidiaries (TI) reserve the right to make corrections, enhancements, improvements and other changes to its semiconductor products and services per JESD46, latest issue, and to discontinue any product or service per JESD48, latest issue. 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