RECTRON MMBT2222A

MMBT2222A
SOT-23 BIPOLAR TRANSISTORS
TRANSISTOR(NPN)
FEATURES
* Epitaxial planar die construction
* Complementary PNP Type available(MMBT2907A)
SOT-23
COLLECTOR
3
MECHANICAL DATA
*
*
*
*
*
Case: Molded plastic
Epoxy: UL 94V-O rate flame retardant
Lead: MIL-STD-202E method 208C guaranteed
Mounting position: Any
Weight: 0.008 gram
1
BASE
0.055(1.40)
2
EMITTER
0.047(1.20)
0.006(0.15)
0.003(0.08)
0.043(1.10)
0.035(0.90)
0.020(0.50)
0.012(0.30)
0.004(0.10)
0.000(0.00)
0.100(2.55)
0.089(2.25)
0.020(0.50)
0.012(0.30)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
0.019(2.00)
0.071(1.80)
Ratings at 25 o C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
1
0.118(3.00)
3 0.110(2.80)
2
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
o
MAXIMUM RATINGES ( @ TA = 25 C unless otherwise noted )
RATINGS
SYMBOL
VALUE
UNITS
o
o
Max. Steady State Power Dissipation (1) @TA=25 C Derate above 25 C
PD
300
mW
Max. Operating Temperature Range
TJ
150
o
C
-55 to +150
o
C
Storage Temperature Range
TSTG
ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted )
CHARACTERISTICS
Thermal Resistance Junction to Ambient
Notes: 1. Alumina=0.4*0.3*0.024in. 99.5% alumina.
2. " Fully ROHS Compliant ", "100% Sn plating (Pb-free)".
SYMBOL
MIN.
TYP.
MAX.
R qJA
-
-
417
UNITS
o
C/W
2007-5
ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted)
Chatacteristic
Symbol
Min
Max
Unit
Collector-Emitter Breakdown Voltage (I C = 10mAdc, I B = 0)
V(BR)CEO
40
-
Vdc
Collector-Base Breakdown Voltage (I C = 10mAdc, I E = 0)
V(BR)CBO
75
-
Vdc
Emitter-Base Breakdown Voltage (I E = 10mAdc, I C = 0)
V(BR)EBO
6.0
-
Vdc
ICEX
-
0.1
uAdc
-
0.01
-
10
IEBO
-
0.1
uAdc
IBL
-
20
nAdc
35
-
40
-
-
0.3
-
1.0
0.6
1.2
-
2.0
OFF CHARACTERISTICS
Collector Cutoff Current (V CE = 60Vdc,V EB(off) = 3.0Vdc
Collector Cutoff Current (V CB = 60Vdc, I E = 0)
O
(V CB = 60Vdc, I E = 0, TA= 125 C)
Emitter Cutoff Current (V EB = 3.0Vdc, I C = 0)
Base Cutoff Current (V CE = 60Vdc, V EB(off) = 3.0Vdc
ICBO
uAdc
ON CHARACTERISTICS
O
DC Current Gain (I C = 10mAdc, V CE = 10Vdc, TA= -55 C)
(I C = 500mAdc, V CE = 10Vdc) (1)
Collector-Emitter Saturation Voltage (1) (I C = 150mAdc, I B = 15mAdc)
(I C = 500mAdc, I B = 50mAdc)
Base-Emitter Saturation Voltage (1) (I C = 150mAdc, I B = 15mAdc)
(I C = 500mAdc, I B = 50mAdc)
hFE
VCE(sat)
VBE(sat)
-
Vdc
Vdc
SMALL-SIGNAL CHARACTERISTICS
Current-Gain-Bandwidth Product (2) (I C = 20mAdc, V CE = 20Vdc, f= 100MHz)
Input Capacitance (V EB =0.5Vdc, I C = 0, f= 1.0MHz)
Input Impedance (I C = 1.0mAdc, V CE =10Vdc, f=1.0kHz)
(I C = 10mAdc, V CE =10Vdc, f=1.0kHz)
Voltage Feedback Ratio (I C = 1.0mAdc, V CE = 10Vdc, f= 1.0kHz)
(I C = 10mAdc, V CE =10Vdc, f= 1.0kHz)
Small-Signal Current Gain (I C = 1.0mAdc, V CE = 10Vdc, f= 1.0kHz)
(I C = 10mAdc, V CE = 10Vdc, f= 1.0kHz)
Output Admittance (I C = 1.0mAdc, V CE = 10Vdc, f= 1.0kHz)
(I C = 10mAdc, V CE = 10Vdc, f= 1.0kHz)
Collector Base Time Constant (I E = 20mAdc, V CB = 20Vdc, f= 31.8MHz)
Noise Figure (I C = 100mAdc, V CE = 10Vdc, R S = 1.0kW, f= 1.0kHz)
fT
300
-
MHz
Cibo
-
25
pF
hie
hre
hfe
2.0
8.0
0.25
1.25
-
8.0
-
4.0
50
300
75
375
kW
X 10 -4
-
5.0
35
25
200
rb,Cc
-
150
ps
NF
-
4.0
dB
td
-
10
tr
-
25
ts
-
225
tf
-
60
hoe
umhos
SWITCHING CHARACTERISTICS
Delay Time
Rise Time
Storage Time
Fall Time
(V CC = 30Vdc, V BE(off) = -0.5Vdc, I C = 150mAdc, I B1 = 15mAdc)
(V CC = 30Vdc, I C = 150mAdc, I B1 = I B2 = 15mAdc)
<300ms,Duty Cycle-<2.0%
NOTES : 1. Pulse Test: Pulse Width2. fT is defined as the frequency at which |hfe| extrapolates to unity
ns
ns
RATING AND CHARACTERISTICS CURVES ( MMBT2222A )
hFE, DCCURRENT GAIN
1000
700
500
300
200
100
70
50
30
20
10
01
0.2 0.3
0.5 0.7
1.0
2.0 3.0
5.0 7.0
10
20
30
50 70
100
200 300 500 700
1.0k
IC,CCLLECTOR CURRENT (mA)
Figure 1. DC Current Gain
VCE, COLLECTOR-EMITTER VOLTAGE (V)
1.0
0.8
0.6
0.4
0.2
0
0.005
0.01
0.02 0.03 0.05
0.1
0.2 0.3
0.5
1.0
2.0
3.0
5.0
10
20
30
50
IB,BASE CURRENT (mA)
Figure 2. Collector Saturation Region
200
100
70
50
10
100
tf
70
50
30
20
7.0
5.0
3.0
2.0
t's=ts-1/8tf
200
[email protected]=30V
[email protected](off)=2.0V
[email protected](off)=0
30
20
VCC=30V
IC/IB=10
IB1=IB2
TJ=25 OC
300
t,TIME (ns)
t,TIME (ns)
500
IC/IB=10
TJ=25OC
10
5.0 7.0
10
20 30
50 70 100
IC,CLLECTOR CURRENT (mA)
Figure 3.Turn-On Time
200 300
500
7.0
5.0
5.0 7.0
10
20 30
50 70
100
IC,CLLECTOR CURRENT (mA)
Figure 4.Turn-Off Time
200 300 500
RATING AND CHARACTERISTICS CURVES ( MMBT2222A )
RS=OPTIMUM
SOURCE
RESISTANCE
IC=1.0mA,RS=150W
500uA,RS=200W
100uA,RS=2.0KW
50uA,RS=4.0KW
8.0
6.0
4.0
2.0
10
f=1.0KHz
NF, NOISE FIGURE (dB)
NT, NOISE FIGURE (dB)
10
0
8.0
IC=50uA
100uA
500uA
1.0mA
6.0
4.0
2.0
0
0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20
50 100
50 100 200
Figure 5.Frequency Effects
30
CAPACITANCE (PF)
20
Ceb
10
7.0
5.0
CCb
3.0
2.0
0.1 0.2 0.3
0.5 0.7 1.0
2.0 3.0 5.0 7.0 10
500
1.0k 2.0k
5.0k
10k 20k 50k 100k
RS,SOURCE RESISTANCE (OHMS)
20 30 50
T, CURRENT-GAINBANDWIDTHPRODUCT (MHz)
f, FREQUENCY (KHz)
Figure 6.Source Resistance Effects
500
VCE=20V
O
TJ=25 C
300
200
100
70
50 1.0
2.0 3.0
REVERSE VOLTAGE (VOLTS)
5.0 7.0
10
20 30
50
70 100
IC, COLLECTOR CURRENT (mA)
Figure 7.Capacitances
Figure 8.Currunt-Gain Bandwidth Product
1.0
+0.5
O
TJ=25 C
0
VBE(sat)@IC/IB=10
1.0V
0.6
0.4
VBE(on)@VCE=10V
0.2
0
COEFFICIENT (mV/OC)
V, VOLTAGE (V)
0.8
Rq VC for VCE(sat)
-0.5
-1.0
-1.5
-2.0
VCE(sat)@IC/IB=10
0.1 0.2 0.5
1.0 2.0 5.0 10 20 50 100 200 500 1.0k
IC, COLLECTOR CURRENT (mA)
Figure 9."On" Voltages
-2.5
Rq VB for VBE
0.1 0.2
0.5 1.0 2.0
5.0 10 20
50 100 200 500
IC, COLLECTOR CURRENT (mA)
Figure 10.Temperature Coefficients
DISCLAIMER NOTICE
Rectron Inc reserves the right to make changes without notice to any product
specification herein, to make corrections, modifications, enhancements or other
changes. Rectron Inc or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies. Data sheet specifications and its information
contained are intended to provide a product description only. "Typical" parameters which may be included on RECTRON data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. Rectron Inc does not assume any liability arising out of the application or
use of any product or circuit.
Rectron products are not designed, intended or authorized for use in medical,
life-saving implant or other applications intended for life-sustaining or other related applications where a failure or malfunction of component or circuitry may directly or indirectly cause injury or threaten a life without expressed written approval of Rectron Inc. Customers using or selling Rectron components for use in
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