MMBT2222A SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(NPN) FEATURES * Epitaxial planar die construction * Complementary PNP Type available(MMBT2907A) SOT-23 COLLECTOR 3 MECHANICAL DATA * * * * * Case: Molded plastic Epoxy: UL 94V-O rate flame retardant Lead: MIL-STD-202E method 208C guaranteed Mounting position: Any Weight: 0.008 gram 1 BASE 0.055(1.40) 2 EMITTER 0.047(1.20) 0.006(0.15) 0.003(0.08) 0.043(1.10) 0.035(0.90) 0.020(0.50) 0.012(0.30) 0.004(0.10) 0.000(0.00) 0.100(2.55) 0.089(2.25) 0.020(0.50) 0.012(0.30) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS 0.019(2.00) 0.071(1.80) Ratings at 25 o C ambient temperature unless otherwise specified. Single phase, half wave, 60 Hz, resistive or inductive load. 1 0.118(3.00) 3 0.110(2.80) 2 For capacitive load, derate current by 20%. Dimensions in inches and (millimeters) o MAXIMUM RATINGES ( @ TA = 25 C unless otherwise noted ) RATINGS SYMBOL VALUE UNITS o o Max. Steady State Power Dissipation (1) @TA=25 C Derate above 25 C PD 300 mW Max. Operating Temperature Range TJ 150 o C -55 to +150 o C Storage Temperature Range TSTG ELECTRICAL CHARACTERISTICS ( @ TA = 25oC unless otherwise noted ) CHARACTERISTICS Thermal Resistance Junction to Ambient Notes: 1. Alumina=0.4*0.3*0.024in. 99.5% alumina. 2. " Fully ROHS Compliant ", "100% Sn plating (Pb-free)". SYMBOL MIN. TYP. MAX. R qJA - - 417 UNITS o C/W 2007-5 ELECTRICAL CHARACTERISTICS (@TA=25OC unless otherwise noted) Chatacteristic Symbol Min Max Unit Collector-Emitter Breakdown Voltage (I C = 10mAdc, I B = 0) V(BR)CEO 40 - Vdc Collector-Base Breakdown Voltage (I C = 10mAdc, I E = 0) V(BR)CBO 75 - Vdc Emitter-Base Breakdown Voltage (I E = 10mAdc, I C = 0) V(BR)EBO 6.0 - Vdc ICEX - 0.1 uAdc - 0.01 - 10 IEBO - 0.1 uAdc IBL - 20 nAdc 35 - 40 - - 0.3 - 1.0 0.6 1.2 - 2.0 OFF CHARACTERISTICS Collector Cutoff Current (V CE = 60Vdc,V EB(off) = 3.0Vdc Collector Cutoff Current (V CB = 60Vdc, I E = 0) O (V CB = 60Vdc, I E = 0, TA= 125 C) Emitter Cutoff Current (V EB = 3.0Vdc, I C = 0) Base Cutoff Current (V CE = 60Vdc, V EB(off) = 3.0Vdc ICBO uAdc ON CHARACTERISTICS O DC Current Gain (I C = 10mAdc, V CE = 10Vdc, TA= -55 C) (I C = 500mAdc, V CE = 10Vdc) (1) Collector-Emitter Saturation Voltage (1) (I C = 150mAdc, I B = 15mAdc) (I C = 500mAdc, I B = 50mAdc) Base-Emitter Saturation Voltage (1) (I C = 150mAdc, I B = 15mAdc) (I C = 500mAdc, I B = 50mAdc) hFE VCE(sat) VBE(sat) - Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current-Gain-Bandwidth Product (2) (I C = 20mAdc, V CE = 20Vdc, f= 100MHz) Input Capacitance (V EB =0.5Vdc, I C = 0, f= 1.0MHz) Input Impedance (I C = 1.0mAdc, V CE =10Vdc, f=1.0kHz) (I C = 10mAdc, V CE =10Vdc, f=1.0kHz) Voltage Feedback Ratio (I C = 1.0mAdc, V CE = 10Vdc, f= 1.0kHz) (I C = 10mAdc, V CE =10Vdc, f= 1.0kHz) Small-Signal Current Gain (I C = 1.0mAdc, V CE = 10Vdc, f= 1.0kHz) (I C = 10mAdc, V CE = 10Vdc, f= 1.0kHz) Output Admittance (I C = 1.0mAdc, V CE = 10Vdc, f= 1.0kHz) (I C = 10mAdc, V CE = 10Vdc, f= 1.0kHz) Collector Base Time Constant (I E = 20mAdc, V CB = 20Vdc, f= 31.8MHz) Noise Figure (I C = 100mAdc, V CE = 10Vdc, R S = 1.0kW, f= 1.0kHz) fT 300 - MHz Cibo - 25 pF hie hre hfe 2.0 8.0 0.25 1.25 - 8.0 - 4.0 50 300 75 375 kW X 10 -4 - 5.0 35 25 200 rb,Cc - 150 ps NF - 4.0 dB td - 10 tr - 25 ts - 225 tf - 60 hoe umhos SWITCHING CHARACTERISTICS Delay Time Rise Time Storage Time Fall Time (V CC = 30Vdc, V BE(off) = -0.5Vdc, I C = 150mAdc, I B1 = 15mAdc) (V CC = 30Vdc, I C = 150mAdc, I B1 = I B2 = 15mAdc) <300ms,Duty Cycle-<2.0% NOTES : 1. Pulse Test: Pulse Width2. fT is defined as the frequency at which |hfe| extrapolates to unity ns ns RATING AND CHARACTERISTICS CURVES ( MMBT2222A ) hFE, DCCURRENT GAIN 1000 700 500 300 200 100 70 50 30 20 10 01 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 70 100 200 300 500 700 1.0k IC,CCLLECTOR CURRENT (mA) Figure 1. DC Current Gain VCE, COLLECTOR-EMITTER VOLTAGE (V) 1.0 0.8 0.6 0.4 0.2 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 IB,BASE CURRENT (mA) Figure 2. Collector Saturation Region 200 100 70 50 10 100 tf 70 50 30 20 7.0 5.0 3.0 2.0 t's=ts-1/8tf 200 tr@VCC=30V td@VEB(off)=2.0V td@VEB(off)=0 30 20 VCC=30V IC/IB=10 IB1=IB2 TJ=25 OC 300 t,TIME (ns) t,TIME (ns) 500 IC/IB=10 TJ=25OC 10 5.0 7.0 10 20 30 50 70 100 IC,CLLECTOR CURRENT (mA) Figure 3.Turn-On Time 200 300 500 7.0 5.0 5.0 7.0 10 20 30 50 70 100 IC,CLLECTOR CURRENT (mA) Figure 4.Turn-Off Time 200 300 500 RATING AND CHARACTERISTICS CURVES ( MMBT2222A ) RS=OPTIMUM SOURCE RESISTANCE IC=1.0mA,RS=150W 500uA,RS=200W 100uA,RS=2.0KW 50uA,RS=4.0KW 8.0 6.0 4.0 2.0 10 f=1.0KHz NF, NOISE FIGURE (dB) NT, NOISE FIGURE (dB) 10 0 8.0 IC=50uA 100uA 500uA 1.0mA 6.0 4.0 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 50 100 200 Figure 5.Frequency Effects 30 CAPACITANCE (PF) 20 Ceb 10 7.0 5.0 CCb 3.0 2.0 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 500 1.0k 2.0k 5.0k 10k 20k 50k 100k RS,SOURCE RESISTANCE (OHMS) 20 30 50 T, CURRENT-GAINBANDWIDTHPRODUCT (MHz) f, FREQUENCY (KHz) Figure 6.Source Resistance Effects 500 VCE=20V O TJ=25 C 300 200 100 70 50 1.0 2.0 3.0 REVERSE VOLTAGE (VOLTS) 5.0 7.0 10 20 30 50 70 100 IC, COLLECTOR CURRENT (mA) Figure 7.Capacitances Figure 8.Currunt-Gain Bandwidth Product 1.0 +0.5 O TJ=25 C 0 VBE(sat)@IC/IB=10 1.0V 0.6 0.4 VBE(on)@VCE=10V 0.2 0 COEFFICIENT (mV/OC) V, VOLTAGE (V) 0.8 Rq VC for VCE(sat) -0.5 -1.0 -1.5 -2.0 VCE(sat)@IC/IB=10 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 1.0k IC, COLLECTOR CURRENT (mA) Figure 9."On" Voltages -2.5 Rq VB for VBE 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 500 IC, COLLECTOR CURRENT (mA) Figure 10.Temperature Coefficients DISCLAIMER NOTICE Rectron Inc reserves the right to make changes without notice to any product specification herein, to make corrections, modifications, enhancements or other changes. 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