RUICHIPS RU6H10R

RU6H10R
N-Channel Advanced Power MOSFET
MOSFET
Features
Pin Description
• 600V/10A,
RDS (ON) =0.65Ω (Type) @ VGS=10V
• Gate charge minimized
TO-220
TO-220F
TO-263
TO-247
• Low Crss( Typ. 15pF)
• Extremely high dv/dt capability
• 100% avalanche tested
• Lead Free and Green Available
Applications
• High efficiency switch mode power
supplies
• Electronic lamp ballasts based on half
bridge
N-Channel MOSFET
Absolute Maximum Ratings
Symbol
Parameter
Rating
Unit
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS
Drain-Source Voltage
600
VGSS
Gate-Source Voltage
±30
Maximum Junction Temperature
150
°C
-55 to 150
°C
TC=25°C
10
A
TC=25°C
40
A
TJ
TSTG
IS
Storage Temperature Range
Diode Continuous Forward Current
Mounted on Large Heat Sink
IDP
300μs Pulse Drain Current Tested
ID
Continuous Drain Current
PD
Maximum Power Dissipation
RθJC
Thermal Resistance-Junction to Case
TC=25°C
V
①
TC=100°C
10
7
TC=25°C
185
TC=100°C
73
A
W
0.68
°C/W
450
mJ
Drain-Source Avalanche Ratings
EAS
②
Avalanche Energy, Single Pulsed
Copyright Ruichips Semiconductor Co., Ltd
Rev. B – JAN., 2011
www.ruichips.com
RU6H10R
Electrical Characteristics
Symbol
(TA=25°C Unless Otherwise Noted)
Parameter
Test Condition
RU6H10R
Min.
Typ.
Max.
Unit
Static Characteristics
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
VGS(th)
IGSS
RDS(ON)
③
VGS=0V, IDS=250µA
V
600
VDS= 600V, VGS=0V
1
TJ=85°C
Gate Threshold Voltage
VDS=VGS, IDS=250µA
Gate Leakage Current
VGS=±30V, VDS=0V
Drain-Source On-state Resistance
VGS= 10V, IDS=5A
30
3
-
0.65
µA
5
V
±100
nA
0.75
Ω
1.3
V
Diode Characteristics
VSD
③
Diode Forward Voltage
trr
Reverse Recovery Time
Qrr
Reverse Recovery Charge
ISD=10 A, VGS=0V
ISD=10A, dlSD/dt=100A/µs
239
ns
2.7
µC
10
Ω
④
Dynamic Characteristics
RG
Gate Resistance
VGS=0V,VDS=0V,F=1MHz
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
td(ON)
Turn-on Delay Time
tr
Turn-on Rise Time
td(OFF)
Turn-off Delay Time
tf
VGS=0V,
VDS= 30V,
Frequency=1.0MHz
1110
pF
130
15
13
VDD=300V, RL=30Ω,
IDS=10A, VGEN= 10V,
RG=47Ω
Turn-off Fall Time
15
ns
29
16
④
Gate Charge Characteristics
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
Notes:
40
VDS=480V, VGS= 10V,
IDS=10A
9
52
nC
17
①Current limited by maximum junction temperature.
②Limited by TJmax, IAS =10A, VDD = 100V, RG = 47Ω , Starting TJ = 25°C.
③Pulse test ; Pulse width≤300µs, duty cycle≤2%.
④Guaranteed by design, not subject to production testing.
Copyright Ruichips Semiconductor Co., Ltd
Rev. B – JAN., 2011
2
www.ruichips.com
RU6H10R
Typical Characteristics
Drain Current
Ptot - Power (W)
ID - Drain Current (A)
Power Dissipation
Tj - Junction Temperature (°C)
Tj - Junction Temperature (°C)
Safe Operation Area
ID - Drain Current (A)
Normalized Effective Transient
Thermal Transient Impedance
VDS - Drain-Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. B – JAN., 2011
Square Wave Pulse Duration (sec)
3
www.ruichips.com
RU6H10R
Typical Characteristics
Drain-Source On Resistance
ID - Drain Current (A)
RDS(ON) - On Resistance (Ω)
Output Characteristics
VDS - Drain-Source Voltage (V)
ID - Drain Current (A)
Gate Threshold Voltage
RDS(ON) - On - Resistance ()
Normalized Threshold Voltage
Drain-Source On Resistance
VGS - Gate-Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. B – JAN., 2011
Tj - Junction Temperature (°C)
4
www.ruichips.com
RU6H10R
Typical Characteristics
Source-Drain Diode Forward
IS - Source Current (A)
Normalized On Resistance
Drain-Source On Resistance
Tj - Junction Temperature (°C)
VSD - Source-Drain Voltage (V)
Gate Charge
C - Capacitance (pF)
VGS - Gate-Source Voltage (V)
Capacitance
VDS - Drain-Source Voltage (V)
Copyright Ruichips Semiconductor Co., Ltd
Rev. B – JAN., 2011
QG - Gate Charge (nC)
5
www.ruichips.com
RU6H10R
Avalanche Test Circuit and Waveforms
Switching Time Test Circuit and Waveforms
Copyright Ruichips Semiconductor Co., Ltd
Rev. B – JAN., 2011
6
www.ruichips.com
RU6H10R
Ordering and Marking Information
RU6H10
Package (Available)
R : TO-220;
S: TO-263 ;
P: TO-220F
Operating Temperature Range
C : -55 to 175 ºC
Assembly Material
G : Green & Lead Free
Packaging
T : TUBE
TR : Tape & Reel
Copyright Ruichips Semiconductor Co., Ltd
Rev. B – JAN., 2011
7
www.ruichips.com
RU6H10R
Package Information
TO-220FB-3L
SYMBOL
MM
INCH
MM
SYMBOL
INCH
MIN
NOM
MAX
MIN
NOM
MAX
A
4.40
4.57
4.70
0.173
0.180
0.185
Øp1
MIN
NOM
MAX
MIN
NOM
MAX
1.40
1.50
1.60
0.055
0.059
A1
1.27
1.30
1.33
0.050
0.051
0.052
e
0.063
A2
2.35
2.40
2.50
0.093
0.094
0.098
e1
b
0.77
-
0.90
0.030
-
0.035
H1
6.40
6.50
6.60
0.252
0.256
0.260
b2
1.23
-
1.36
0.048
-
0.054
L
12.75
-
13.17
0.502
-
0.519
-
-
3.95
-
-
0.156
2.54BSC
0.1BSC
5.08BSC
0.2BSC
C
0.48
0.50
0.52
0.019
0.020
0.021
L1
D
15.40
15.60
15.80
0.606
0.614
0.622
L2
D1
9.00
9.10
9.20
0.354
0.358
0.362
Øp
3.57
3.60
3.63
0.141
0.142
0.143
DEP
0.05
0.10
0.20
0.002
0.004
0.008
Q
2.73
2.80
2.87
0.107
0.110
0.113
E
9.70
9.90
10.10
0.382
0.389
0.398
θ1
5°
7°
9°
5°
7°
9°
E1
-
8.70
-
-
0.343
-
θ2
1°
3°
5°
1°
3°
5°
E2
9.80
10.00
10.20
0.386
0.394
0.401
2.50REF.
0.098REF.
ALL DIMENSIONS REFER TO JEDEC STANDARD
DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS
Copyright Ruichips Semiconductor Co., Ltd
Rev. B – JAN., 2011
8
www.ruichips.com
RU6H10R
TO-263-2L
SYMBOL
MM
INCH
MM
MIN
NOM
MAX
MIN
NOM
MAX
SYMBOL
INCH
MIN
NOM
MAX
MIN
NOM
MAX
A
4.40
4.57
4.70
0.173
0.180
0.185
L
2.00
2.30
2.60
0.079
0.090
0.102
A1
0
0.10
0.25
0
0.004
0.010
L3
1.17
1.27
1.40
0.046
0.050
0.055
A2
2.59
2.69
2.79
0.102
0.106
0.110
L1
-
-
1.70
-
-
0.067
b
0.77
-
0.90
0.030
-
0.035
L4
0.25BSC
0.01BSC
b1
1.23
-
1.36
0.048
-
0.052
L2
2.50REF.
0.098REF.
c
0.34
-
0.47
0.013
-
0.019
θ
0°
-
8°
0°
-
8°
C1
1.22
-
1.32
0.048
-
0.052
θ1
5°
7°
9°
5°
7°
9°
D
8.60
8.70
8.80
0.338
0.343
0.346
θ2
1°
3°
5°
1°
3°
5°
E
10.00
10.16
10.26
0.394
0.4
0.404
DEP
0.05
0.10
0.20
0.002
0.004
0.008
Øp1
1.40
1.50
1.60
0.055
0.059
0.063
15.50
0.579
e
H
2.54BSC
14.70
15.10
0.1BSC
0.594
0.610
ALL DIMENSIONS REFER TO JEDEC STANDARD
DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS
Copyright Ruichips Semiconductor Co., Ltd
Rev. B – JAN., 2011
9
www.ruichips.com
RU6H10R
TO-220F-3L
SYMBOL
MM
INCH
MM
MIN
NOM
MAX
MIN
NOM
MAX
SYMBOL
MIN
NOM
INCH
MAX
MIN
NOM
MAX
E
9.96
10.16
10.36
0.392
0.400
0.408
Øp3
-
3.450
-
-
0.136
-
A
4.50
4.70
4.90
0.177
0.185
0.193
θ1
5°
7°
9°
5°
7°
9°
A1
2.34
2.54
2.74
0.092
0.100
0.108
θ2
-
45°
-
-
45°
-
A2
0.95
1.05
1.15
0.037
0.041
0.045
DEP
0.05
0.10
0.15
0.002
0.004
0.006
A3
0.42
0.52
0.62
0.017
0.020
0.024
F1
1.90
2.00
2.10
0.075
0.079
0.083
A4
2.65
2.75
2.85
0.104
0.108
0.112
F2
13.61
13.81
14.01
0.536
0.544
0.552
c
-
0.50
-
-
0.020
-
F3
3.20
3.30
3.40
0.126
0.130
0.134
D
15.67
15.87
16.07
0.617
0.625
0.633
G
3.25
3.45
3.65
0.128
0.136
0.144
Q
8.80
9.00
9.20
0.346
0.354
0.362
G1
5.90
6.00
6.10
0.232
0.236
0.240
H1
6.48
6.68
6.88
0.255
0.263
0.271
G2
6.90
7.00
7.10
0.272
0.276
0.280
b1
1.17
1.20
0.046
0.047
0.048
b2
0.77
0.8
0.85
0.030
0.031
0.033
e
2.54BSC
0.1BSC
Øp
-
3.183
-
-
0.125
-
1.24
L
12.78
12.98
13.18
0.503
0.511
0.519
b3
1.10
1.30
1.50
0.043
0.051
0.059
D1
8.99
9.19
9.39
0.354
0.362
0.370
E1
9.8
10.00
10.20
0.386
0.394
0.412
Øp1
1.40
1.50
1.60
0.055
0.059
0.063
K1
0.75
0.8
0.85
0.030
0.031
0.033
Øp2
1.15
1.20
1.25
0.045
0.047
0.049
ALL DIMENSIONS REFER TO JEDEC STANDARD
DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS
Copyright Ruichips Semiconductor Co., Ltd
Rev. B – JAN., 2011
10
www.ruichips.com
RU6H10R
Customer Service
Worldwide Sales and Service:
[email protected]
Technical Support:
[email protected]
Investor Relations Contacts:
[email protected]
Marcom Contact:
[email protected]
Editorial Contact:
[email protected]
HR Contact:
[email protected]
Legal Contact:
[email protected]
Shen Zhen RUICHIPS Semiconductor CO., LTD
Room 501, the 5floor An Tong Industrial Building,
NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA
TEL: (86-755) 8311-5334
FAX: (86-755) 8311-4278
E-mail: [email protected]
Copyright Ruichips Semiconductor Co., Ltd
Rev. B – JAN., 2011
11
www.ruichips.com