RU6H10R N-Channel Advanced Power MOSFET MOSFET Features Pin Description • 600V/10A, RDS (ON) =0.65Ω (Type) @ VGS=10V • Gate charge minimized TO-220 TO-220F TO-263 TO-247 • Low Crss( Typ. 15pF) • Extremely high dv/dt capability • 100% avalanche tested • Lead Free and Green Available Applications • High efficiency switch mode power supplies • Electronic lamp ballasts based on half bridge N-Channel MOSFET Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 600 VGSS Gate-Source Voltage ±30 Maximum Junction Temperature 150 °C -55 to 150 °C TC=25°C 10 A TC=25°C 40 A TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current Mounted on Large Heat Sink IDP 300μs Pulse Drain Current Tested ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case TC=25°C V ① TC=100°C 10 7 TC=25°C 185 TC=100°C 73 A W 0.68 °C/W 450 mJ Drain-Source Avalanche Ratings EAS ② Avalanche Energy, Single Pulsed Copyright Ruichips Semiconductor Co., Ltd Rev. B – JAN., 2011 www.ruichips.com RU6H10R Electrical Characteristics Symbol (TA=25°C Unless Otherwise Noted) Parameter Test Condition RU6H10R Min. Typ. Max. Unit Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) ③ VGS=0V, IDS=250µA V 600 VDS= 600V, VGS=0V 1 TJ=85°C Gate Threshold Voltage VDS=VGS, IDS=250µA Gate Leakage Current VGS=±30V, VDS=0V Drain-Source On-state Resistance VGS= 10V, IDS=5A 30 3 - 0.65 µA 5 V ±100 nA 0.75 Ω 1.3 V Diode Characteristics VSD ③ Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge ISD=10 A, VGS=0V ISD=10A, dlSD/dt=100A/µs 239 ns 2.7 µC 10 Ω ④ Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf VGS=0V, VDS= 30V, Frequency=1.0MHz 1110 pF 130 15 13 VDD=300V, RL=30Ω, IDS=10A, VGEN= 10V, RG=47Ω Turn-off Fall Time 15 ns 29 16 ④ Gate Charge Characteristics Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Notes: 40 VDS=480V, VGS= 10V, IDS=10A 9 52 nC 17 ①Current limited by maximum junction temperature. ②Limited by TJmax, IAS =10A, VDD = 100V, RG = 47Ω , Starting TJ = 25°C. ③Pulse test ; Pulse width≤300µs, duty cycle≤2%. ④Guaranteed by design, not subject to production testing. Copyright Ruichips Semiconductor Co., Ltd Rev. B – JAN., 2011 2 www.ruichips.com RU6H10R Typical Characteristics Drain Current Ptot - Power (W) ID - Drain Current (A) Power Dissipation Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area ID - Drain Current (A) Normalized Effective Transient Thermal Transient Impedance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. B – JAN., 2011 Square Wave Pulse Duration (sec) 3 www.ruichips.com RU6H10R Typical Characteristics Drain-Source On Resistance ID - Drain Current (A) RDS(ON) - On Resistance (Ω) Output Characteristics VDS - Drain-Source Voltage (V) ID - Drain Current (A) Gate Threshold Voltage RDS(ON) - On - Resistance () Normalized Threshold Voltage Drain-Source On Resistance VGS - Gate-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. B – JAN., 2011 Tj - Junction Temperature (°C) 4 www.ruichips.com RU6H10R Typical Characteristics Source-Drain Diode Forward IS - Source Current (A) Normalized On Resistance Drain-Source On Resistance Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Gate Charge C - Capacitance (pF) VGS - Gate-Source Voltage (V) Capacitance VDS - Drain-Source Voltage (V) Copyright Ruichips Semiconductor Co., Ltd Rev. B – JAN., 2011 QG - Gate Charge (nC) 5 www.ruichips.com RU6H10R Avalanche Test Circuit and Waveforms Switching Time Test Circuit and Waveforms Copyright Ruichips Semiconductor Co., Ltd Rev. B – JAN., 2011 6 www.ruichips.com RU6H10R Ordering and Marking Information RU6H10 Package (Available) R : TO-220; S: TO-263 ; P: TO-220F Operating Temperature Range C : -55 to 175 ºC Assembly Material G : Green & Lead Free Packaging T : TUBE TR : Tape & Reel Copyright Ruichips Semiconductor Co., Ltd Rev. B – JAN., 2011 7 www.ruichips.com RU6H10R Package Information TO-220FB-3L SYMBOL MM INCH MM SYMBOL INCH MIN NOM MAX MIN NOM MAX A 4.40 4.57 4.70 0.173 0.180 0.185 Øp1 MIN NOM MAX MIN NOM MAX 1.40 1.50 1.60 0.055 0.059 A1 1.27 1.30 1.33 0.050 0.051 0.052 e 0.063 A2 2.35 2.40 2.50 0.093 0.094 0.098 e1 b 0.77 - 0.90 0.030 - 0.035 H1 6.40 6.50 6.60 0.252 0.256 0.260 b2 1.23 - 1.36 0.048 - 0.054 L 12.75 - 13.17 0.502 - 0.519 - - 3.95 - - 0.156 2.54BSC 0.1BSC 5.08BSC 0.2BSC C 0.48 0.50 0.52 0.019 0.020 0.021 L1 D 15.40 15.60 15.80 0.606 0.614 0.622 L2 D1 9.00 9.10 9.20 0.354 0.358 0.362 Øp 3.57 3.60 3.63 0.141 0.142 0.143 DEP 0.05 0.10 0.20 0.002 0.004 0.008 Q 2.73 2.80 2.87 0.107 0.110 0.113 E 9.70 9.90 10.10 0.382 0.389 0.398 θ1 5° 7° 9° 5° 7° 9° E1 - 8.70 - - 0.343 - θ2 1° 3° 5° 1° 3° 5° E2 9.80 10.00 10.20 0.386 0.394 0.401 2.50REF. 0.098REF. ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright Ruichips Semiconductor Co., Ltd Rev. B – JAN., 2011 8 www.ruichips.com RU6H10R TO-263-2L SYMBOL MM INCH MM MIN NOM MAX MIN NOM MAX SYMBOL INCH MIN NOM MAX MIN NOM MAX A 4.40 4.57 4.70 0.173 0.180 0.185 L 2.00 2.30 2.60 0.079 0.090 0.102 A1 0 0.10 0.25 0 0.004 0.010 L3 1.17 1.27 1.40 0.046 0.050 0.055 A2 2.59 2.69 2.79 0.102 0.106 0.110 L1 - - 1.70 - - 0.067 b 0.77 - 0.90 0.030 - 0.035 L4 0.25BSC 0.01BSC b1 1.23 - 1.36 0.048 - 0.052 L2 2.50REF. 0.098REF. c 0.34 - 0.47 0.013 - 0.019 θ 0° - 8° 0° - 8° C1 1.22 - 1.32 0.048 - 0.052 θ1 5° 7° 9° 5° 7° 9° D 8.60 8.70 8.80 0.338 0.343 0.346 θ2 1° 3° 5° 1° 3° 5° E 10.00 10.16 10.26 0.394 0.4 0.404 DEP 0.05 0.10 0.20 0.002 0.004 0.008 Øp1 1.40 1.50 1.60 0.055 0.059 0.063 15.50 0.579 e H 2.54BSC 14.70 15.10 0.1BSC 0.594 0.610 ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright Ruichips Semiconductor Co., Ltd Rev. B – JAN., 2011 9 www.ruichips.com RU6H10R TO-220F-3L SYMBOL MM INCH MM MIN NOM MAX MIN NOM MAX SYMBOL MIN NOM INCH MAX MIN NOM MAX E 9.96 10.16 10.36 0.392 0.400 0.408 Øp3 - 3.450 - - 0.136 - A 4.50 4.70 4.90 0.177 0.185 0.193 θ1 5° 7° 9° 5° 7° 9° A1 2.34 2.54 2.74 0.092 0.100 0.108 θ2 - 45° - - 45° - A2 0.95 1.05 1.15 0.037 0.041 0.045 DEP 0.05 0.10 0.15 0.002 0.004 0.006 A3 0.42 0.52 0.62 0.017 0.020 0.024 F1 1.90 2.00 2.10 0.075 0.079 0.083 A4 2.65 2.75 2.85 0.104 0.108 0.112 F2 13.61 13.81 14.01 0.536 0.544 0.552 c - 0.50 - - 0.020 - F3 3.20 3.30 3.40 0.126 0.130 0.134 D 15.67 15.87 16.07 0.617 0.625 0.633 G 3.25 3.45 3.65 0.128 0.136 0.144 Q 8.80 9.00 9.20 0.346 0.354 0.362 G1 5.90 6.00 6.10 0.232 0.236 0.240 H1 6.48 6.68 6.88 0.255 0.263 0.271 G2 6.90 7.00 7.10 0.272 0.276 0.280 b1 1.17 1.20 0.046 0.047 0.048 b2 0.77 0.8 0.85 0.030 0.031 0.033 e 2.54BSC 0.1BSC Øp - 3.183 - - 0.125 - 1.24 L 12.78 12.98 13.18 0.503 0.511 0.519 b3 1.10 1.30 1.50 0.043 0.051 0.059 D1 8.99 9.19 9.39 0.354 0.362 0.370 E1 9.8 10.00 10.20 0.386 0.394 0.412 Øp1 1.40 1.50 1.60 0.055 0.059 0.063 K1 0.75 0.8 0.85 0.030 0.031 0.033 Øp2 1.15 1.20 1.25 0.045 0.047 0.049 ALL DIMENSIONS REFER TO JEDEC STANDARD DO NOT INCLUDE MOLD FLASH OR PROTRUSIONS Copyright Ruichips Semiconductor Co., Ltd Rev. B – JAN., 2011 10 www.ruichips.com RU6H10R Customer Service Worldwide Sales and Service: [email protected] Technical Support: [email protected] Investor Relations Contacts: [email protected] Marcom Contact: [email protected] Editorial Contact: [email protected] HR Contact: [email protected] Legal Contact: [email protected] Shen Zhen RUICHIPS Semiconductor CO., LTD Room 501, the 5floor An Tong Industrial Building, NO.207 Mei Hua Road Fu Tian Area Shen Zhen City, CHINA TEL: (86-755) 8311-5334 FAX: (86-755) 8311-4278 E-mail: [email protected] Copyright Ruichips Semiconductor Co., Ltd Rev. B – JAN., 2011 11 www.ruichips.com