2SA1568 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4065) A IB –3 mA –60min V hFE VCE=–1V, IC=–6A 50min A VCE(sat) IC=–6A, IB=–0.3A –0.35max IECO=–10A –2.5max V 16.9±0.3 –60max V 35(Tc=25°C) W VFEC Tj 150 °C fT VCE=–12V, IE=0.5A 40typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 330typ pF Tstg 3.9 PC 1.35±0.15 1.35±0.15 5 –1 –2 –3 –4 –5 0 –7 –10 –6 –100 Collector-Emitter Voltage V C E (V) –1000 (V C E =–1V) 300 125˚C D C Cur r ent Gai n h F E 100 25˚C –30˚C 100 10 10 2 –0.02 –10 –0.1 Collector Current I C (A) –1 –10 p) Tem 0.3 se 1 10 1000 s ite he 150x150x2 at si nk Without Heatsink Natural Cooling 20 fin –0.5 Natural Cooling Silicone Grease Heatsink: Aluminum in mm 30 In Maximu m Power Dissi pation P C (W) 0m –1 –0.05 –3 100 ith 24 0.5 W Collector Cur rent I C (A) DC s –5 s –0.1 10 –1.2 P c – T a Derating m 20 –1.0 Time t(ms) 10 10 Typ 30 –0.8 35 1m 40 –0.6 1 Safe Operating Area (Single Pulse) –10 Emitter Current I E (A) –0.4 4 –30 1 –0.2 θ j-a – t Characteristics (V C E =–12V) 50 0 Collector Current I C (A) f T – I E Characteristics (Typical) Cut- off Fr equ ency f T (M H Z ) DC Curr ent Gain h F E Typ 0 0.05 0.1 0 –3000 h FE – I C Temperature Characteristics (Typical) 300 –1 –4 Base-Emittor Voltage V B E (V) (V C E =–1V) –0.1 –6 Base Current I B (mA) h FE – I C Characteristics (Typical) 2 –0.02 –8 –2 Transient Thermal Resistance Collector Current I C (A) I B= 0 A 0 –0.5 –9A –10mA –2 –3 A –20mA –1.0 –1A –4 –10 –6A –40mA (V C E =–1V) –12 –1.4 –12 –60mA I C – V BE Temperature Characteristics (Typical) I C= –8 –6 0.2typ ˚C –1 00 mA –2 –10 Collector-Emitter Saturation Voltage V C E (s a t) (V ) 0mA 00 mA –15 0.4typ V CE ( sat ) – I B Characteristics (Typical) I C – V CE Characteristics (Typical) –12 0.4typ 120 –120 (Ca –10 B C E 125 –6 4 Weight : Approx 2.0g a. Part No. b. Lot No. tf (µs) tstg (µs) Collector Current I C (A) –24 ton (µs) IB2 (mA) IB1 (mA) VBB2 (V) VBB1 (V) 2.4±0.2 2.2±0.2 θ j - a (˚C /W) IC (A) RL (Ω) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 ■Typical Switching Characteristics (Common Emitter) VCC (V) ø3.3±0.2 a b mp) IC VEB=–6V IC=–25mA e Te V(BR)CEO 4.2±0.2 2.8 c0.5 (Cas IEBO V 10.1±0.2 4.0±0.2 V –6 –12 + µA 0.8±0.2 –60 VEBO –100max mp) VCEO VCB=–60V –30˚C ICBO e Te V Unit (Cas –60 Ratings 25˚C VCBO External Dimensions FM20 (TO220F) (Ta=25°C) Conditions ±0.2 Symbol Unit C Application : DC Motor Driver, Chopper Regulator and General Purpose ■Electrical Characteristics Ratings Symbol Equivalent curcuit 8.4±0.2 ■Absolute maximum ratings (Ta=25°C) B 13.0min Built-in Diode at C–E Low VCE (sat) E ( 250 Ω ) 100x100x2 10 50x50x2 Without Heatsink –5 –10 –50 Collector-Emitter Voltage V C E (V) –100 2 0 0 25 50 75 100 125 Ambient Temperature Ta(˚C) 150