SANKEN 2SA1568_07

2SA1568
Silicon PNP Epitaxial Planar Transistor (Complement to type 2SC4065)
A
IB
–3
mA
–60min
V
hFE
VCE=–1V, IC=–6A
50min
A
VCE(sat)
IC=–6A, IB=–0.3A
–0.35max
IECO=–10A
–2.5max
V
16.9±0.3
–60max
V
35(Tc=25°C)
W
VFEC
Tj
150
°C
fT
VCE=–12V, IE=0.5A
40typ
MHz
–55 to +150
°C
COB
VCB=–10V, f=1MHz
330typ
pF
Tstg
3.9
PC
1.35±0.15
1.35±0.15
5
–1
–2
–3
–4
–5
0
–7 –10
–6
–100
Collector-Emitter Voltage V C E (V)
–1000
(V C E =–1V)
300
125˚C
D C Cur r ent Gai n h F E
100
25˚C
–30˚C
100
10
10
2
–0.02
–10
–0.1
Collector Current I C (A)
–1
–10
p)
Tem
0.3
se
1
10
1000
s
ite
he
150x150x2
at
si
nk
Without Heatsink
Natural Cooling
20
fin
–0.5
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
30
In
Maximu m Power Dissi pation P C (W)
0m
–1
–0.05
–3
100
ith
24
0.5
W
Collector Cur rent I C (A)
DC
s
–5
s
–0.1
10
–1.2
P c – T a Derating
m
20
–1.0
Time t(ms)
10
10
Typ
30
–0.8
35
1m
40
–0.6
1
Safe Operating Area (Single Pulse)
–10
Emitter Current I E (A)
–0.4
4
–30
1
–0.2
θ j-a – t Characteristics
(V C E =–12V)
50
0
Collector Current I C (A)
f T – I E Characteristics (Typical)
Cut- off Fr equ ency f T (M H Z )
DC Curr ent Gain h F E
Typ
0
0.05 0.1
0
–3000
h FE – I C Temperature Characteristics (Typical)
300
–1
–4
Base-Emittor Voltage V B E (V)
(V C E =–1V)
–0.1
–6
Base Current I B (mA)
h FE – I C Characteristics (Typical)
2
–0.02
–8
–2
Transient Thermal Resistance
Collector Current I C (A)
I B=
0
A
0
–0.5
–9A
–10mA
–2
–3 A
–20mA
–1.0
–1A
–4
–10
–6A
–40mA
(V C E =–1V)
–12
–1.4
–12
–60mA
I C – V BE Temperature Characteristics (Typical)
I C=
–8
–6
0.2typ
˚C
–1 00 mA
–2
–10
Collector-Emitter Saturation Voltage V C E (s a t) (V )
0mA
00
mA
–15
0.4typ
V CE ( sat ) – I B Characteristics (Typical)
I C – V CE Characteristics (Typical)
–12
0.4typ
120
–120
(Ca
–10
B C E
125
–6
4
Weight : Approx 2.0g
a. Part No.
b. Lot No.
tf
(µs)
tstg
(µs)
Collector Current I C (A)
–24
ton
(µs)
IB2
(mA)
IB1
(mA)
VBB2
(V)
VBB1
(V)
2.4±0.2
2.2±0.2
θ j - a (˚C /W)
IC
(A)
RL
(Ω)
0.85 +0.2
-0.1
0.45 +0.2
-0.1
2.54
2.54
■Typical Switching Characteristics (Common Emitter)
VCC
(V)
ø3.3±0.2
a
b
mp)
IC
VEB=–6V
IC=–25mA
e Te
V(BR)CEO
4.2±0.2
2.8 c0.5
(Cas
IEBO
V
10.1±0.2
4.0±0.2
V
–6
–12
+
µA
0.8±0.2
–60
VEBO
–100max
mp)
VCEO
VCB=–60V
–30˚C
ICBO
e Te
V
Unit
(Cas
–60
Ratings
25˚C
VCBO
External Dimensions FM20 (TO220F)
(Ta=25°C)
Conditions
±0.2
Symbol
Unit
C
Application : DC Motor Driver, Chopper Regulator and General Purpose
■Electrical Characteristics
Ratings
Symbol
Equivalent
curcuit
8.4±0.2
■Absolute maximum ratings (Ta=25°C)
B
13.0min
Built-in Diode at C–E
Low VCE (sat)
E
( 250 Ω )
100x100x2
10
50x50x2
Without Heatsink
–5
–10
–50
Collector-Emitter Voltage V C E (V)
–100
2
0
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150