2SD2015 Silicon NPN Triple Diffused Planar Transistor IC 4 A 10max mA VEB=6V IC=10mA 120min hFE VCE=2V, IC=2A 2000min V IB 0.5 A VCE(sat) IC=2A, IB=2mA 1.5max PC 25(Tc=25°C) W VBE(sat) IC=2A, IB=2mA 2.0max V Tj 150 °C fT VCE=12V, IE=–0.1A 40typ MHz °C COB VCB=10V, f=1MHz 40typ pF –55 to +150 Tstg 3.9 V 1.35±0.15 1.35±0.15 RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) 40 20 2 10 –5 10 –10 0.6typ 5.0typ 2.0typ 1 0 0 1 2 3 4 5 I C =4 A 1 3A 2A 1A 0 6 0.2 1 Collector-Emitter Voltage V C E (V) 5 10 50 (V C E =4V) 20000 Typ 1000 500 100 Transient Thermal Resistance DC C urrent G ain h FE 10000 5000 5000 12 5˚C 25 1000 500 ˚C –3 0˚C 100 0.03 0.1 0.5 mp) 0 1 1 50 0.03 0.05 4 0.1 Collector Current I C (A) 0.5 1 4 5 1 0.5 1 5 10 50 100 500 1000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) 2 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 20000 Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 30 10 5 10 100ms Collector Cur rent I C (A) 50 40 Typ 30 20 1m m 30 s 0µ s DC 1 0.5 Without Heatsink Natural Cooling 0.1 10 –0.5 –1 Emitter Current I E (A) –4 W ith In 150x150x2 1 00x 1 0 10 0x 2 fin ite he at si nk 50x50x2 2 0.03 –0.05 –0.1 20 Without Heatsink 0.05 0 –0.02 Natural Cooling Silicone Grease Heatsink: Aluminum in mm s Ma xim um Powe r Dissipation P C (W) 60 Cut-o ff F requ ency f T (MH Z ) DC Curr ent Gain h FE 0 100 Base-Emittor Voltage V B E (V) (V C E =4V) 50 1 Base Current I B (mA) h FE – I C Characteristics (Typical) 10000 2 e Te 0.3mA 3 Cas 2 2 ˚C ( 0.4mA 4 125 0.5mA (V CE =4V) 3 θ j- a ( ˚ C/W) Collector Current I C (A) 0.6mA 3 I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) 0.8mA A Weight : Approx 2.0g a. Part No. b. Lot No. B C E V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) IB m =1 2.4±0.2 2.2±0.2 VCC (V) 4 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) ø3.3±0.2 a b p) V(BR)CEO 4.2±0.2 2.8 c0.5 mp) IEBO V 10.1±0.2 ase Te V 6 µA ase Tem 120 VEBO 10max –30˚C (C VCEO Unit VCB=150V 4.0±0.2 ICBO 0.8±0.2 V Ratings ±0.2 150 External Dimensions FM20(TO220F) (Ta=25°C) Conditions 25˚C (C Unit VCBO Symbol 8.4±0.2 ■Electrical Characteristics Ratings (3kΩ) (500Ω) E Application : Driver for Solenoid, Relay and Motor and General Purpose 16.9±0.3 ■Absolute maximum ratings (Ta=25°C) C B 13.0min Darlington Symbol Equivalent circuit 5 10 50 100 Collector-Emitter Voltage V C E (V) 200 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 141