SANKEN 2SB1420_07

(2 k Ω) (80Ω) E
2SB1420
Silicon PNP Epitaxial Planar Transistor
VCBO
–120
V
ICBO
VCB=–120V
–10max
µA
VCEO
–120
V
IEBO
VEB=–6V
–10max
mA
–6
V
V(BR)CEO
–16(Pulse–26)
A
hFE
Unit
IC=–10mA
–120min
VCE=–4V, IC=–8A
2000min
V
IB
–1
A
VCE(sat)
IC=–8A, IB=–16mA
–1.5max
PC
80(Tc=25°C)
W
VBE(sat)
IC=–8A, IB=–16mA
–2.5max
V
Tj
150
°C
fT
VCE=–12V, IE=1A
50typ
MHz
–55 to +150
°C
COB
VCB=–10V, f=1MHz
350typ
pF
V
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(mA)
IB2
(mA)
ton
(µs)
tstg
(µs)
tf
(µs)
–24
2
–12
–10
5
–24
24
1.0typ
3.0typ
1.0typ
0
–1
–2
–3
–4
–5
–4A
–1
0
–0.5
–6
–1
–10
h FE – I C Temperature Characteristics (Typical)
(V C E =–4V)
10000
Typ
5000
1000
–10
–16
10000
12
5˚C
5000
25
˚C
0
–3
˚C
1000
500
–0.3
–0.5
f T – I E Characteristics (Typical)
–1
–5
–10
–16
0.2
10
m
10
s
0µ
s
s
DC
40
)
emp
mp)
se T
at
si
nk
Without Heatsink
Natural Cooling
he
–1
–0.5
60
ite
Collecto r Cur ren t I C (A)
1m
–5
–0.05
–0.03
–3
e Te
P c – T a Derating
fin
16
1000
In
10
100
ith
5
1.8
10
W
Emitter Current I E (A )
1
80
–10
1
p)
0.5
Time t(ms)
–0.1
46
1
–50
0.5
–2.4
3
Safe Operating Area (Single Pulse)
50
–2
θ j-a – t Characteristics
(V C E =–12V)
Typ
0
0.05 0.1
–1
Collector Current I C (A)
Collector Current I C (A)
Cut-o ff F requ ency f T (MH Z )
Transient Thermal Resistance
20000
DC Cur rent Gain h F E
DC Cur rent Gain h F E
20000
100
0
Base-Emittor Voltage V B E (V)
(V C E =–4V)
–5
0
–100
Base Current I B (mA)
h FE – I C Characteristics (Typical)
–1
Tem
–4
Collector-Emitter Voltage V C E (V)
500
–0.3
–8
(Ca
–8A
se
I C =–16A
–12
(Cas
I B =–1.5m A
–2
(V CE =–4V)
(Ca
–3m A
0
–16
˚C
–6 mA
–10
–3
M aximum Po we r Dissipatio n P C (W)
Collector Current I C (A)
–20
1.4
E
125
A
–12m
5.45±0.1
C
I C – V BE Temperature Characteristics (Typical)
Collector Current I C (A)
A
0.65 +0.2
-0.1
Weight : Approx 6.0g
a. Part No.
b. Lot No.
θ j - a (˚C /W )
m
5.0±0.2
1.05 +0.2
-0.1
V CE ( sa t ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V)
A
0m
–4
0
–2
2
3
B
RL
(Ω)
–26
ø3.2±0.1
5.45±0.1
VCC
(V)
2.0±0.1
b
■Typical Switching Characteristics (Common Emitter)
I C – V CE Characteristics (Typical)
a
4.8±0.2
–30˚C
Tstg
15.6±0.4
9.6
2.0
Conditions
25˚C
IC
Symbol
19.9±0.3
VEBO
C
External Dimensions MT-100(TO3P)
(Ta=25°C)
Ratings
Unit
4.0
■Electrical Characteristics
(Ta=25°C)
Ratings
Symbol
4.0max
■Absolute maximum ratings
B
Equivalent circuit
Application : Chopper Regulator, DC Motor Driver and General Purpose
20.0min
Darlington
20
Without Heatsink
–5
–10
–50
–100
Collector-Emitter Voltage V C E (V)
–200
3.5
0
0
25
50
75
100
125
Ambient Temperature Ta(˚C)
150