(2 k Ω) (80Ω) E 2SB1382 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2082) hFE VCE=–4V, IC=–8A 2000min V IB –1 A VCE(sat) IC=–8A, IB=–16mA –1.5max PC 75(Tc=25°C) W VBE(sat) IC=–8A, IB=–16mA –2.5max V Tj 150 °C fT VCE=–12V, IE=1A 50typ MHz –55 to +150 °C COB VCB=–10V, f=1MHz 350typ pF Tstg 3.3 3.0 V RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (mA) IB2 (mA) ton (µs) tstg (µs) tf (µs) –40 5 –8 –10 5 –16 16 0.8typ 1.8typ 1.0typ 1.05 +0.2 -0.1 0 I B =–1.5m A 0 –1 –2 –3 –4 –5 –8A –4A –1 0 –0.5 –6 –1 –10 (V C E =–4V) Typ 5000 1000 –10 –16 10000 12 5˚C 5000 25 ˚C – ˚C 30 1000 500 –0.3 –0.5 –1 f T – I E Characteristics (Typical) –5 –10 –16 10 p) P c – T a Derating m 10 s 0µ s s DC 40 si nk 16 at 10 he 5 ite Without Heatsink Natural Cooling fin –1 –0.5 60 In Co lle ctor Cu rren t I C (A) 1m –5 –0.05 –0.03 –3 1000 ith 1 100 W 0.5 10 Time t(ms) –0.1 Emitter Current I E (A) 1 80 –10 44 0.2 –50 Typ 0 0.05 0.1 0.5 Safe Operating Area (Single Pulse) 50 –2.4 1 (V C E =–12V) 100 –2 3 Collector Current I C (A) Collector Current I C (A) Cut- off F req uency f T (MH Z ) Transient Thermal Resistance D C Cur r ent Gai n h F E D C Cur r ent Gai n h F E 20000 10000 –1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) 20000 –5 0 Base-Emittor Voltage V B E (V) (V C E =–4V) –1 0 –100 Base Current I B (mA) h FE – I C Characteristics (Typical) –0.5 –8 –4 Collector-Emitter Voltage V C E (V) 500 –0.3 Tem I C =–16A –12 se –2 (V C E =–4V) (Ca –10 –16 ˚C –3m A E 125 –6 mA C Weight : Approx 6.5g a. Part No. b. Lot No. –3 M aximu m Power Dissipat io n P C (W) Collector Current I C (A) –20 3.35 1.5 I C – V BE Temperature Characteristics (Typical) Collector Current I C (A) A –12m 4.4 B θ j - a ( ˚ C/ W) A 0.65 +0.2 -0.1 5.45±0.1 V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) A 0m –4 – m 20 0.8 2.15 1.5 VCC (V) –26 1.75 5.45±0.1 ■Typical Switching Characteristics (Common Emitter) I C – V CE Characteristics (Typical) ø3.3±0.2 a b ) A mA –120min emp –16(Pulse–26) IC –10max VEB=–6V IC=–10mA 3.45 ±0.2 mp) V(BR)CEO 5.5±0.2 e Te IEBO V 15.6±0.2 (Cas V –6 µA –30˚C –120 VEBO –10max 0.8±0.2 VCEO VCB=–120V 5.5 ICBO Unit 1.6 V Ratings se T –120 C External Dimensions FM100(TO3PF) (Ta=25°C) Conditions (Ca VCBO Symbol 25˚C Unit 9.5±0.2 ■Electrical Characteristics Ratings Symbol Equivalent circuit Application : Chopper Regulator, DC Motor Driver and General Purpose 23.0±0.3 ■Absolute maximum ratings (Ta=25°C) B 16.2 Darlington 20 Without Heatsink –5 –10 –50 –100 Collector-Emitter Voltage V C E (V) –200 3.5 0 0 50 100 Ambient Temperature Ta(˚C) 150