TRANSISTOR MODULE QCA30B/QCB30A40/60 UL;E76102 M QCA30B and QCB30A are dual Darlington power transistor modules which have series-connected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. IC 30A, VCEX 400/600V Low saturation voltage for higher efficiency. Isolated mounting base VEBO 10V for faster switching speed. Applications Motor Control VVVF , AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application QCA QCB Unit A Maximum Ratings Tj 25 Ratings Symbol Item Conditions QCA30B40 QCA30B60 QCB30A40 QCB30A60 VCBO Collector-Base Voltage 400 600 V VCEX Collector-Emitter Voltage 400 600 V VEBO Emitter-Base Voltage IC IC Collector Current VBE 2V =pw 1ms Reverse Collector Current IB Base Current PT Total power dissipation 10 V 30 60 30 A TC 25 A 2 A 250 W Tj Junction Temperature 40 Tstg Storage Temperature VISO Isolation Voltage A.C.1minute 40 125 2500 Mounting M6 Recommended Value 2.5 3.9 25 40 4.7 48 Terminal M5 Recommended Value 1.5 2.5 15 25 2.7 28 Mounting M5 Recommended Value 1.5 2.5 15 25 2.7 28 N m f B Terminal M4 QCA30B/QCB30A Recommended Value 1.0 1.4 10 14 Typical Value 1.5 15 240/195 g QCA30B Mounting Torque QCB30A Mass 150 Electrical Characteristics Symbol V Tj 25 Item Conditions Ratings Min. Max. Unit ICBO Collector Cut-off Current VCB VCBO 1.0 mA IEBO Emitter Cut-off Current VEB VEBO 300 mA VCEO SUS Collector-Emitter Sustaning Voltage VCEX SUS hFE QCA30B40 QCB30A40 QCA30B60 QCB30A60 QCA30B40 QCB30A40 QCA30B60 QCB30A60 300 V Ic 1A 450 400 Ic 6A IB2 5A V 600 DC Current Gain Ic 30A VCE 2V/5V VCE(sat) Collector-Emitter Saturation Voltage Ic 30A IB 0.4A 2.0 V VBE(sat) ton Base-Emitter Saturation Voltage Ic 30A IB 0.4A 2.5 V ts tf VECO Rth(j-c) 1 Unit On Time Switching Time Storage Time Fall Time Collector-Emitter Reverse Voltage Thermal Impedance (junction to case) 75/100 1.0 Vcc 300V Ic 30A 0.6A IB1 0.6A IB2 Ic 30A Transistor part Diode part 12.0 s 2.0 1.4 0.5/1.6 V /W QCA30B/QCB30A40/60 2