SANREX QCA150BA60

TRANSISTOR MODULE
Hi-
QCA150BA60
UL;E76102 M
QCA150BA60 is a dual Darlington power transistor module which has series-connected
ULTRA HIGH hFE, high speed, high power Darlington transistors. Each transistor has a
reverse paralleled fast recovery diode (trr 200ns). The mounting base of the module is
electrically isolated from Semiconductor elements for simple heatsink construction.
IC 150A, VCEX 600V
Low saturation voltage for higher efficiency.
ULTRA HIGH DC current gain hFE. hFE 750
Isolated mounting base
VEBO 10V for faster switching speed.
Applications
Motor Control VVVF , AC/DC Servo, UPS,
Switching Power Supply, Ultrasonic Application
Unit A
Maximum Ratings
Symbol
Tj 25
Item
Ratings
Conditions
QCA150BA60
Unit
VCBO
Collector-Base Voltage
600
V
VCEX
Collector-Emitter Voltage
600
V
VEBO
Emitter-Base Voltage
IC
IC
VBE
2V
10
Collector Current
=pw 1ms
150 300
150
Reverse Collector Current
IB
Base Current
PT
Total power dissipation
V
A
TC 25
A
9
A
690
W
Tj
Junction Temperature
40
Tstg
Storage Temperature
VISO
Isolation Voltage
A.C.1minute
40
125
2500
Mounting M6
Recommended Value 1.5 2.5 15 25
2.7 28
Terminal M5
Recommended Value 1.5 2.5 15 25
Typical Value
2.7 28
370
Mounting
Torque
Mass
150
V
N m
( f B)
g
Electrical Characteristics
Symbol
Tj 25
Item
Conditions
ICBO
Collector Cut-off Current
VCB VCBO
IEBO
Emitter Cut-off Current
VEB VEBO
VCEO SUS
Ratings
Min.
Typ.
Max.
Unit
2.0
mA
600
mA
450
Collector Emitter Sustaning
Voltage
Ic 1A
D.C. Current Gain
Ic 150A VCE 2.5V
sat
Collector-Emitter Saturation Voltage
Ic 150A IB 200mA
2.5
V
VBE sat
Base-Emitter Saturation Voltage
Ic 150A IB 200mA
3.0
V
VCEX SUS
hFE
VCE
ton
ts
tf
VECO
trr
Rth j-c
37
Ic 30A IB2
V
600
5A
750
On Time
Switching
Time
Storage Time
Fall Time
2.0
Vcc 300V Ic 150A
3A
IB1 300mA IB2
Collector-Emitter Reverse Voltage
Ic
Reverse Recovery time
Vcc 300V Ic 150A di/dt 150A/ s VBE
Transistor part
Thermal Impedance
(junction to case)
8.0
1.8
150A
Diode part
s
2.0
5V
200
V
ns
0.18
0.6
/W
QCA150BA60
38