SANREX SQD300AA100

TRANSISTOR MODULE
SQD300AA100
UL;E76102 M
SQD300AA100 is a Darlington power transistor module with a high speed, high power
Darlington transistor. The transistor has a reverse paralled fast recovery diode. The
mounting base of the module is electrically isolated from semiconductor elements for
simple heatsink construction.
IC 300A, VCEX 1000V
Low saturation voltage for higher efficiency.
High DC current gain hFE
Isolated mounting base
Applications
Moter Control VVVF , AC/DC Servo, UPS,
Switching Power Supply, Ultrasonic Application
Unit A
Maximum Ratings
Symbol
Tj 25
Item
Conditions
Ratings
SQD300AA100
Unit
VCBO
Collector-Base Voltage
1000
V
VCEX
Collector-Emitter Voltage
1000
V
VEBO
Emitter-Base Voltage
IC
IC
VBE
2V
7
V
Collector Current
300
A
Reverse Collector Current
300
A
IB
Base Current
PT
Total power dissipation
TC 25
16
A
2000
W
Tj
Junction Temperature
40
Tstg
Storage Temperature
VISO
Isolation Voltage
A.C.1minute
40
125
2500
Mounting M6
Recommended Value 2.5 3.9 25 40
4.7 48
Terminal M6
Recommended Value 2.5 3.9 25 40
4.7 48
Terminal M4
Recommended Value 1.0 1.4 10 14
Typical Value
1.5 15
520
Mounting
Torque
Mass
150
N m
( f B)
g
Electrical Characteristics
Symbol
Tj 25
Item
Conditions
ICBO
Collector Cut-off Current
VCB 1000V
IEBO
Emitter Cut-off Current
VEB 7V
VCEX SUS
hFE
VCE
Collector Emitter Sustaning Voltage
DC Current Gain
V
Ic 60A IB2
12A
Ic 300A VCE 2.8V
Ic 300A VCE 5V
Ratings
Min.
Max.
Unit
2.0
mA
800
mA
1000
V
75
100
sat
Collector-Emitter Saturation Voltage
Ic 300A IB 6A
2.5
V
VBE sat
Base-Emitter Saturation Voltage
Ic 300A IB 6A
3.5
V
ton
ts
tf
VECO
Rth j-c
47
On Time
Switching
Time
Storage Time
Fall Time
Collector-Emitter Reverse Voltage
Thermal Impedance
(junction to case)
3.0
Vcc 600V Ic 300A
6A
IB1 6A IB2
15.0
s
3.0
Ic
300A
Transistor part
1.8
Diode part
0.3
0.063
V
/W
SQD300AA100
48
TRANSISTOR MODULE
SQD300AA120
UL;E76102 M
SQD300AA120 is a Darlington power transistor module with a high speed, high power
Darlington transistor. The transistor has a reverse paralled fast recovery diode. The
mounting base of the module is electrically isolated from semiconductor elements for
simple heatsink construction.
IC 300A, VCEX 1200V
Low saturation voltage for higher efficiency.
High DC current gain hFE
Isolated mounting base
Applications
Moter Control VVVF , AC/DC Servo, UPS,
Switching Power Supply, Ultrasonic Application
Unit A
Maximum Ratings
Symbol
Tj 25
Item
Conditions
Ratings
SQD300AA120
Unit
VCBO
Collector-Base Voltage
1200
V
VCEX
Collector-Emitter Voltage
1200
V
VEBO
Emitter-Base Voltage
IC
IC
VBE
2V
10
V
Collector Current
300
A
Reverse Collector Current
300
A
IB
Base Current
PT
Total power dissipation
TC 25
16
A
2000
W
Tj
Junction Temperature
40
Tstg
Storage Temperature
VISO
Isolation Voltage
A.C.1minute
40
125
2500
Mounting
Torque
150
M6
Recommended Value 2.5 3.9 25 40
4.7 48
Terminal M6
Recommended Value 2.5 3.9 25 40
4.7 48
Terminal M4
Recommended Value 1.0 1.4 10 14
Typical Value
1.5 15
470
Mass
N m
( f B)
g
Electrical Characteristics
Symbol
Tj 25
Item
Conditions
ICBO
Collector Cut-off Current
VCB 1200V
IEBO
Emitter Cut-off Current
VEB 10V
VCEX SUS
hFE
V
Collector Emitter Sustaning Voltage
Ic 60A IB2
12A
Ratings
Min.
Max.
Unit
4.0
mA
1200
mA
1200
V
DC Current Gain
Ic 300A VCE 5V
VCE
sat
Collector-Emitter Saturation Voltage
Ic 300A IB 6A
3.0
V
VBE
sat
Base-Emitter Saturation Voltage
Ic 300A IB 6A
3.5
V
ton
ts
tf
VECO
Rth j-c
49
On Time
Switching
Time
Storage Time
Fall Time
Collector-Emitter Reverse Voltage
Thermal Impedance
(junction to case)
75
3.0
Vcc 600V Ic 300A
6A
IB1 6A IB2
15.0
s
3.0
Ic
300A
Transistor part
1.8
Dioe part
0.3
0.063
V
/W
SQD300AA120
50