TRANSISTOR MODULE SQD300AA100 UL;E76102 M SQD300AA100 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. IC 300A, VCEX 1000V Low saturation voltage for higher efficiency. High DC current gain hFE Isolated mounting base Applications Moter Control VVVF , AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application Unit A Maximum Ratings Symbol Tj 25 Item Conditions Ratings SQD300AA100 Unit VCBO Collector-Base Voltage 1000 V VCEX Collector-Emitter Voltage 1000 V VEBO Emitter-Base Voltage IC IC VBE 2V 7 V Collector Current 300 A Reverse Collector Current 300 A IB Base Current PT Total power dissipation TC 25 16 A 2000 W Tj Junction Temperature 40 Tstg Storage Temperature VISO Isolation Voltage A.C.1minute 40 125 2500 Mounting M6 Recommended Value 2.5 3.9 25 40 4.7 48 Terminal M6 Recommended Value 2.5 3.9 25 40 4.7 48 Terminal M4 Recommended Value 1.0 1.4 10 14 Typical Value 1.5 15 520 Mounting Torque Mass 150 N m ( f B) g Electrical Characteristics Symbol Tj 25 Item Conditions ICBO Collector Cut-off Current VCB 1000V IEBO Emitter Cut-off Current VEB 7V VCEX SUS hFE VCE Collector Emitter Sustaning Voltage DC Current Gain V Ic 60A IB2 12A Ic 300A VCE 2.8V Ic 300A VCE 5V Ratings Min. Max. Unit 2.0 mA 800 mA 1000 V 75 100 sat Collector-Emitter Saturation Voltage Ic 300A IB 6A 2.5 V VBE sat Base-Emitter Saturation Voltage Ic 300A IB 6A 3.5 V ton ts tf VECO Rth j-c 47 On Time Switching Time Storage Time Fall Time Collector-Emitter Reverse Voltage Thermal Impedance (junction to case) 3.0 Vcc 600V Ic 300A 6A IB1 6A IB2 15.0 s 3.0 Ic 300A Transistor part 1.8 Diode part 0.3 0.063 V /W SQD300AA100 48 TRANSISTOR MODULE SQD300AA120 UL;E76102 M SQD300AA120 is a Darlington power transistor module with a high speed, high power Darlington transistor. The transistor has a reverse paralled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. IC 300A, VCEX 1200V Low saturation voltage for higher efficiency. High DC current gain hFE Isolated mounting base Applications Moter Control VVVF , AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application Unit A Maximum Ratings Symbol Tj 25 Item Conditions Ratings SQD300AA120 Unit VCBO Collector-Base Voltage 1200 V VCEX Collector-Emitter Voltage 1200 V VEBO Emitter-Base Voltage IC IC VBE 2V 10 V Collector Current 300 A Reverse Collector Current 300 A IB Base Current PT Total power dissipation TC 25 16 A 2000 W Tj Junction Temperature 40 Tstg Storage Temperature VISO Isolation Voltage A.C.1minute 40 125 2500 Mounting Torque 150 M6 Recommended Value 2.5 3.9 25 40 4.7 48 Terminal M6 Recommended Value 2.5 3.9 25 40 4.7 48 Terminal M4 Recommended Value 1.0 1.4 10 14 Typical Value 1.5 15 470 Mass N m ( f B) g Electrical Characteristics Symbol Tj 25 Item Conditions ICBO Collector Cut-off Current VCB 1200V IEBO Emitter Cut-off Current VEB 10V VCEX SUS hFE V Collector Emitter Sustaning Voltage Ic 60A IB2 12A Ratings Min. Max. Unit 4.0 mA 1200 mA 1200 V DC Current Gain Ic 300A VCE 5V VCE sat Collector-Emitter Saturation Voltage Ic 300A IB 6A 3.0 V VBE sat Base-Emitter Saturation Voltage Ic 300A IB 6A 3.5 V ton ts tf VECO Rth j-c 49 On Time Switching Time Storage Time Fall Time Collector-Emitter Reverse Voltage Thermal Impedance (junction to case) 75 3.0 Vcc 600V Ic 300A 6A IB1 6A IB2 15.0 s 3.0 Ic 300A Transistor part 1.8 Dioe part 0.3 0.063 V /W SQD300AA120 50