TRANSISTOR MODULE THREE PHASES BRIDGE TYPE QF15AA40/60 QF15AA is six pack Darlington power transistor module which has six transistors connected in three phase bridge configuraction. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction. IC 15A, VCEX 400/600V Low saturation voltage for higher efficiency. High DC current gain hFE Isolated mounting base VEBO 10V for faster switching speed. Applications Motor Control VVVF , AC Servo, UPS Unit A Maximum Ratings Symbol Tj 25 Item Conditions Ratings QF15AA40 QF15AA60 Unit VCBO Collector-Base Voltage 400 600 V VCEX Collector-Emitter Voltage 400 600 V VEBO Emitter-Base Voltage IC IC Collector Current VBE 2V =pw 1ms Reverse Collector Current IB Base Current PT Total power dissipation 10 V 15 30 15 A TC 25 A 1 A 100 W Tj Junction Temperature 40 Tstg Storage Temperature VISO Isolation Voltage A.C.1minute 40 125 2500 Mounting Torque M5 Recommended Value 1.5 2.5 15 25 2.7 28 Mass Typical Value 150 N m ( f B) g 95 Electrical Characteristics Symbol Tj 25 Item Conditions ICBO Collector Cut-off Current VCB VCBO IEBO Emitter Cut-off Current VEB VEBO QF15AA40 VCEO SUS Collector Emitter Sustaning Voltage VCEX SUS hFE V QF15AA60 QF15AA40 QF15AA60 DC Current Gain Ratings Min. Max. 1.0 mA 100 mA 300 Ic 1A V 450 Ic 3A IB2 1A 400 V 600 Ic 15A VCE 2V 75 Ic 15A VCE 5V 100 Unit VCE(sat) Collector-Emitter Saturation Voltage Ic 15A 0.2A 2.0 V VBE(sat) ton Base-Emitter Saturation Voltage Ic 15A IB 0.2A 2.5 V ts tf VECO Rth(j-c) 59 IB On Time Switching Time Storage Time Fall Time Collector-Emitter Reverse Voltage Thermal Impedance (junction to case) 1.0 Vcc 300V Ic 15A 0.4A IB1 0.4A IB2 12.0 s 2.0 Ic 15A Transistor part 1.5 Diode part 2.5 1.2 V /W QF15AA40/60 60