TRANSISTOR MODULE QCA150AA100 UL;E76102 M QCA150AA100 is a dual Darlington power transistor module which has seriesconnected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction, IC 150A, VCEX 1000V Low saturation voltage for higher efficiency. High DC current gain hFE Isolated mounting base Applications Motor Control VVVF , AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application Unit A Maximum Ratings Symbol Tj 25 Item Conditions Ratings QCA150AA100 Unit VCBO Collector-Base Voltage 1000 V VCEX Collector-Emitter Voltage 1000 V VEBO Emitter-Base Voltage IC IC VBE 2V 7 V Collector Current 150 A Reverse Collector Current 150 A IB Base Current PT Total power dissipation TC 25 8 A 1000 W Tj Junction Temperature 40 Tstg Storage Temperature VISO Isolation Voltage A.C.1minute 40 125 2500 Mounting M6 Recommended Value 2.5 3.9 25 40 4.7 48 Terminal M6 Recommended Value 2.5 3.9 25 40 Typical Value 4.7 48 540 Mounting Torque Mass 150 N m ( f B) g Electrical Characteristics Symbol Tj 25 Item Conditions ICBO Collector Cut-off Current VCB 1000V IEBO Emitter Cut-off Current VEB 7V VCEX SUS hFE Collector Emitter Sustaning Voltage DC Current Gain V Ic 30A IB2 5A Ic 150A VCE 2.8V Ic 150A VCE 5V Ratings Min. Max. Unit 1.0 mA 400 mA 1000 V 75 100 VCE(sat) Collector-Emitter Saturation Voltage Ic 150A IB 3A 2.50 V VBE(sat) ton Base-Emitter Saturation Voltage Ic 150A IB 3A 3.50 V ts tf VECO Rth(j-c) 23 On Time Switching Time Storage Time Fall Time Collector-Emitter Reverse Voltage Thermal Impedance (junction to case) 3.00 Vcc 600V Ic 150A 3A IB1 3A IB2 15.00 s 3.00 Ic 150A Transistor part 1.80 Diode part 0.6 0.125 V /W QCA150AA100 24 TRANSISTOR MODULE QCA150AA120 UL;E76102 M QCA150AA120 is a dual Darlington power transistor module which has seriesconnected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction, IC 150A, VCEX 1200V Low saturation voltage for higher efficiency. High DC current gain hFE Isolated mounting base Applications Motor Control VVVF , AC/DC Servo, UPS, Switching Power Supply, Ultrasonic Application Unit A Maximum Ratings Symbol Tj 25 Item Conditions Ratings QCA150AA120 Unit VCBO Collector-Base Voltage 1200 V VCEX Collector-Emitter Voltage 1200 V VEBO Emitter-Base Voltage IC IC VBE 2V 10 V Collector Current 150 A Reverse Collector Current 150 A IB Base Current PT Total power dissipation TC 25 8 A 1000 W Tj Junction Temperature 40 Tstg Storage Temperature VISO Isolation Voltage A.C.1minute 40 125 2500 Mounting M6 Recommended Value 2.5 3.9 25 40 4.7 48 Terminal M6 Recommended Value 2.5 3.9 25 40 Typical Value 4.7 48 470 Mounting Torque Mass 150 N m ( f B) g Electrical Characteristics Symbol Tj 25 Item Conditions ICBO Collector Cut-off Current VCB 1200V IEBO Emitter Cut-off Current VEB 10V VCEX SUS hFE V Ratings Min. Collector Emitter Sustaning Voltage Ic 30A IB2 6A 1200 75 Max. Unit 2.00 mA 600 mA V DC Current Gain Ic 150A VCE 5V VCE(sat) Collector-Emitter Saturation Voltage Ic 150A IB 3A 3.00 V VBE(sat) ton Base-Emitter Saturation Voltage Ic 150A IB 3A 3.50 V ts tf VECO Rth(j-c) 25 On Time Switching Time Storage Time Fall Time Collector-Emitter Reverse Voltage Thermal Impedance (junction to case) 3.00 Vcc 600V Ic 150A 3A IB1 3A IB2 15.00 s 3.00 Ic 150A Transistor part 1.80 Diode part 0.6 0.125 V /W QCA150AA120 26