SavantIC Semiconductor Product Specification 2SB943 Silicon PNP Power Transistors DESCRIPTION ·With TO-220Fa package ·Large collector current IC ·Low collector saturation voltage ·Complement to type 2SD1268 APPLICATIONS ·For power switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220Fa) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -130 V VCEO Collector-emitter voltage Open base -80 V VEBO Emitter-base voltage Open collector -7 V IC Collector current -3 A ICM Collector current-peak -6 A PC Ta=25 2 TC=25 30 W Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SB943 Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ,IB=0 VCEsat Collector-emitter saturation voltage IC=-2A, IB=-0.1A -0.5 V VBEsat Base-emitter saturation voltage IC=-2A, IB=-0.1A -1.5 V IEBO Emitter cut-off current VEB=-5V; IC=0 -50 µA ICBO Collector cut-off current VCB=-100V; IE=0 -10 µA hFE-1 DC current gain IC=-0.1A ; VCE=-2V 45 hFE-2 DC current gain IC=-0.5A ; VCE=-2V 60 Transition frequency IC=-0.5A; VCE=-10V fT CONDITIONS MIN TYP. MAX -80 UNIT V 260 30 MHz 0.3 µs 1.1 µs 0.3 µs Switching times ton Turn-on time tstg Storage time tf IC=-0.5A;IB1=-IB2=-50mA Fall time hFE-2 Classifications R Q P 60-120 90-180 130-260 2 SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3 2SB943