SavantIC Semiconductor Product Specification BUH315 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High voltage ·High speed switching APPLICATIONS ·Horizontal deflection for color TV ·Switch mode power supplies. PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1500 V VCEO Collector-emitter voltage Open base 700 V VEBO Emitter-base voltage Open collector 10 V IC Collector current (DC) 6 A ICM Collector current-peak 12 A IB Base current (DC) 3 A IBM Base current-peak tp<5ms 5 A Ptot Total power dissipation TC=25 44 W Tj Tstg Operating junction temperature Storage temperature tp<5ms 150 -65~150 SavantIC Semiconductor Product Specification BUH315 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 700 V V(BR)EBO Emitter-base breakdown voltage IE=10mA; IC=0 10 V VCEsat Collector-emitter saturation voltage IC=3A ;IB=0.75A 1.5 V VBEsat Base-emitter saturation voltage IC=3A ;IB=0.75A 1.3 V ICES Collector cut-off current VCE=1500V; VBE=0 0.2 mA IEBO Emitter cut-off current VEB=5V; IC=0 0.1 mA hFE DC current gain IC=3A ; VCE=5V Tj=100 6 3.5 MAX UNIT 12 Switching times resistive load ts Storage time tf Fall time 2.4 µs 0.2 µs IC=3A;IB1=0.75A;IB2=1.5A VCC=400V THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 2.8 2 UNIT /W SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BUH315