SavantIC Semiconductor Product Specification 2SC3230 Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SA1276 ·Good linearity of hFE APPLICATIONS ·General purpose applications ·Cordless telephone tx final amplifier application for 1.7MHz system PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 30 V VCEO Collector-emitter voltage Open base 30 V VEBO Emitter-base voltage Open collector 5 V IC Collector current 3 A IE Emitter current -3 A PC Collector power dissipation 10 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC3230 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 30 V V(BR)EBO Emitter-base breakdown voltage IE=1mA ;IC=0 5 V VCE(sat) Collector-emitter saturation voltage IC=2A ;IB=0.2 A 0.3 0.8 V VBE Base-emitter on voltage IC=0.5A ; VCE=2V 0.75 1.0 V ICBO Collector cut-off current VCB=20V; IE=0 1.0 µA IEBO Emitter cut-off current VEB=5V; IC=0 1.0 µA hFE-1 DC current gain IC=0.5A ; VCE=2V 70 hFE-2 DC current gain IC=2.5A ; VCE=2V 25 COB Collector output capacitance IE=0; VCB=10V,f=1MHz 35 pF Transition frequency IC=0.5A ; VCE=2V 100 MHz fT hFE-1 Classifications O Y 70-140 120-240 2 240 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.10 mm) 3 2SC3230