SavantIC Semiconductor Product Specification 2SC2591 2SC2592 Silicon NPN Power Transistors DESCRIPTION ·With TO-220 package ·Complement to type 2SA1111/1112 ·Good linearity of hFE ·High VCEO APPLICATIONS ·For audio frequency, high power amplifiers application PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-220) and symbol ABSOLUTE MAXIMUM RATINGS(TC=25 ) SYMBOL PARAMETER CONDITIONS 2SC2591 VCBO 150 Open base 2SC2592 VEBO Emitter-base voltage V 180 2SC2591 Collector-emitter voltage UNIT 150 Open emitter Collector-base voltage 2SC2592 VCEO VALUE V 180 Open collector 5 V 1 A 1.5 A 20 W IC Collector current ICM Collector current-peak PC Collector power dissipation Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 SavantIC Semiconductor Product Specification 2SC2591 2SC2592 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL V(BR)CEO VEBO PARAMETER Collector-emitter breakdown voltage CONDITIONS 2SC2591 MIN TYP. MAX UNIT 150 IC=0.1mA ,IB=0 2SC2592 V 180 Emitter-base breakdown voltage IE=10µA ,IC=0 VCE(sat) Collector-emitter saturation voltage IC=0.5A; IB=50mA 0.5 2.0 V VBE(sat) Base-emitter saturation voltage IC=0.5A; IB=50mA 1.0 2.0 V ICBO Collector cut-off current VCB=120V; IE=0 1 µA IEBO Emitter cut-off current VEB=4V; IC=0 1 µA hFE-1 DC current gain IC=150mA ; VCE=10V 90 hFE-2 DC current gain IC=500mA ; VCE=5V 50 COB Output capacitance IE=0 ; VCB=10V;f=1MHz 20 pF fT Transition frequency IC=50mA ; VCE=10V 200 MHz hFE-1 Classifications Q R S 90-155 130-220 185-330 2 5 V 330 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC2591 2SC2592 PACKAGE OUTLINE Fig.2 Outline dimensions(unindicated tolerance:±0.10 mm) 3 SavantIC Semiconductor Product Specification 2SC2591 2SC2592 Silicon NPN Power Transistors 4