Inchange Semiconductor Product Specification 2SC4232 Silicon NPN Power Transistors · DESCRIPTION ·With TO-247 package ·Switching power transistor ·High breakdown voltage PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-247) and symbol Absolute maximum ratings(Tc=25℃) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 1200 V VCEO Collector-emitter voltage Open base 800 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 2 A ICM Collector current-Peak 4 A IB Base current 1 A IBM Base current-Peak 2 A PD Total power dissipation 70 W Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ MAX UNIT 1.7 ℃/W TC=25℃ THERMAL CHARACTERISTICS SYMBOL Rth j-C PARAMETER Thermal resistance junction to case Inchange Semiconductor Product Specification 2SC4232 Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER VCEO(SUS) Collector-emitter sustaining voltage IC=0.1A; IB=0 VCEsat Collector-emitter saturation voltage IC=1A ;IB=0.2A 1.0 V VBEsat Base-emitter saturation voltage IC=1A ;IB=0.2A 1.5 V At rated voltage 0.1 mA 0.1 mA ICBO CONDITIONS MIN MAX 800 UNIT V Collector cut-off current ICEO Collector cut-off current IEBO Emitter cut-off current At rated voltage hFE-1 DC current gain IC=1A ; VCE=5V 8 hFE-2 DC current gain IC=1mA ; VCE=5V 7 Transition frequency IC=0.2A ; VCE=10V fT TYP. 8 MHz Switching times resistive load ton Turn-on time ts Storage time tf Fall time IC=1A IB1=0.2A; IB2=0.4A VBB2=4V ,RL=250Ω 2 0.5 μs 3.5 μs 0.3 μs Inchange Semiconductor Product Specification 2SC4232 Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3