SavantIC Semiconductor Product Specification 2SC4581 Silicon NPN Power Transistors DESCRIPTION ·With TO-3PML package ·High voltage,high speed ·Switching power transistor PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-3PML) and symbol Absolute maximum (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 600 V VCEO Collector-emitter voltage Open base 450 V VEBO Emitter-base voltage Open collector 7 V IC Collector current 10 A ICM Collector current-peak 20 A IB Base current 4 A IBM Base current-peak 8 A PC Collector power dissipation 65 W Tj Junction temperature 150 Tstg Storage temperature -55~150 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance junction to case MAX UNIT 1.92 /W SavantIC Semiconductor Product Specification 2SC4581 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER VCEsat Collector-emitter saturation voltage VBEsat MAX UNIT IC=5A; IB=1 A 1.0 V Base-emitter saturation voltage IC=5A; IB=1 A 1.5 V Collector-emitter sustaining voltage IC=0.2A; IB=0 IEBO Emitter cut-off current At rated voltage 0.1 mA ICBO Collector cut-off current At rated voltage 0.1 mA VCEO(SUS) CONDITIONS MIN 450 ICEO Collector cut-off current hFE-1 DC current gain IC=5 A ; VCE=5V 10 hFE-2 DC current gain IC=1mA ; VCE=5V 5 Transition frequency IC=1A ; VCE=10V fT TYP. V 20 MHz Switching times ton Turn-on time tstg Storage time tf IC=5A;RL=30D IB1=1A; IB2=2A VBB2=4V Fall time 2 0.5 µs 2.0 µs 0.2 µs SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 2SC4581