ISC 2SC4053

Inchange Semiconductor
Product Specification
2SC4053
Silicon NPN Power Transistors
・
DESCRIPTION
・With TO-220C package
・High voltage,High speed switching
・High reliability
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
600
V
VCEO
Collector-emitter voltage
Open base
450
V
VEBO
Emitter-base voltage
Open collector
7
V
IC
Collector current
5
A
ICM
Collector current-peak
10
A
IB
Base current
2
A
IBM
Base current-peak
4
A
PC
Collector dissipation
50
W
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
MAX
UNIT
2.5
℃/W
TC=25℃
THERMAL CHARACTERISTICS
SYMBOL
Rth j-C
PARAMETER
Thermal resistance junction to case
Inchange Semiconductor
Product Specification
2SC4053
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.1A ; IB=0
VCEsat
Collector-emitter saturation voltage
IC=2.5A; IB=0.5A
1.0
V
VBEsat
Base-emitter saturation voltage
IC=2.5A; IB=0.5A
1.5
V
ICBO
Collector cut-off current
At rated voltage
0.1
mA
ICEO
Collector cut-off current
At rated voltage
0.1
mA
IEBO
Emitter cut-off current
At rated voltage
0.1
mA
hFE-1
DC current gain
IC=2.5A ; VCE=5V
10
hFE-2
DC current gain
IC=1mA ; VCE=5V
5
Transition frequency
IC=0.5A ; VCE=10V
fT
CONDITIONS
MIN
TYP.
MAX
450
UNIT
V
20
MHz
Switching times
ton
Turn-on time
tstg
Storage time
tf
IC=2.5A;IB1=0.5A;
IB2=1A;RL=60Ω
VBB2=4V
Fall time
2
0.5
μs
2.0
μs
0.2
μs
Inchange Semiconductor
Product Specification
2SC4053
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm)
3