Inchange Semiconductor Product Specification 2SD1457 2SD1457A Silicon NPN Power Transistors DESCRIPTION ・With TO-3PFa package ・High DC current gain ・DARLINGTON ・High VCBO APPLICATIONS ・For power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PFa) and symbol 体 导 半 Absolute maximum ratings (Ta=25℃) 固电 SYMBOL VCBO VCEO VEBO PARAMETER EM S E G N A H Collector-base voltage INC CONDITIONS Open emitter 2SD1457 Collector-emitter voltage Emitter-base voltage D N O IC R O T UC MAX UNIT 200 V 150 Open base 2SD1457A Open collector V 200 5 V IC Collector current 6 A ICM Collector current-peak 10 A PC Collector power dissipation TC=25℃ 60 W Ta=25℃ 3.0 Tj Junction temperature 150 ℃ Tstg Storage temperature -55~150 ℃ Inchange Semiconductor Product Specification 2SD1457 2SD1457A Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS 2SD1457 Collector-emitter sustaining voltage VCEO(SUS) TYP. MAX UNIT 150 IC=2A ;L=10mH V 2SD1457A V(BR)EBO MIN 200 Emitter-base breakdown voltage IE=0.1A ;IC=0 VCEsat Collector-emitter saturation voltage IC=3A ;IB=60mA 1.5 V VBEsat Base-emitter saturation voltage IC=3A ;IB=60mA 2.5 V ICBO Collector cut-off current VCB=200V; IE=0 100 μA hFE DC current gain IC=2A ; VCE=2V Transition frequency IC=0.5A ; VCE=10V;f=1MHz fT 体 导 半 固电 O 2000-5000 4000-10000 IN 700-2500 10000 TOR 15 C U D ON G N A CH P V 700 C I M E SE hFE Classifications Q 5 2 MHz Inchange Semiconductor Product Specification 2SD1457 2SD1457A Silicon NPN Power Transistors PACKAGE OUTLINE 体 导 半 固电 EM S E NG A H C IN R O T UC D N O IC Fig.2 outline dimensions (unindicated tolerance:±0.30mm) 3