ISC 2SD1457A

Inchange Semiconductor
Product Specification
2SD1457 2SD1457A
Silicon NPN Power Transistors
DESCRIPTION
・With TO-3PFa package
・High DC current gain
・DARLINGTON
・High VCBO
APPLICATIONS
・For power amplification
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PFa) and symbol
体
导
半
Absolute maximum ratings (Ta=25℃)
固电
SYMBOL
VCBO
VCEO
VEBO
PARAMETER
EM
S
E
G
N
A
H
Collector-base voltage
INC
CONDITIONS
Open emitter
2SD1457
Collector-emitter voltage
Emitter-base voltage
D
N
O
IC
R
O
T
UC
MAX
UNIT
200
V
150
Open base
2SD1457A
Open collector
V
200
5
V
IC
Collector current
6
A
ICM
Collector current-peak
10
A
PC
Collector power dissipation
TC=25℃
60
W
Ta=25℃
3.0
Tj
Junction temperature
150
℃
Tstg
Storage temperature
-55~150
℃
Inchange Semiconductor
Product Specification
2SD1457 2SD1457A
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2SD1457
Collector-emitter
sustaining voltage
VCEO(SUS)
TYP.
MAX
UNIT
150
IC=2A ;L=10mH
V
2SD1457A
V(BR)EBO
MIN
200
Emitter-base breakdown voltage
IE=0.1A ;IC=0
VCEsat
Collector-emitter saturation voltage
IC=3A ;IB=60mA
1.5
V
VBEsat
Base-emitter saturation voltage
IC=3A ;IB=60mA
2.5
V
ICBO
Collector cut-off current
VCB=200V; IE=0
100
μA
hFE
DC current gain
IC=2A ; VCE=2V
Transition frequency
IC=0.5A ; VCE=10V;f=1MHz
fT
‹
体
导
半
固电
O
2000-5000
4000-10000
IN
700-2500
10000
TOR
15
C
U
D
ON
G
N
A
CH
P
V
700
C
I
M
E SE
hFE Classifications
Q
5
2
MHz
Inchange Semiconductor
Product Specification
2SD1457 2SD1457A
Silicon NPN Power Transistors
PACKAGE OUTLINE
体
导
半
固电
EM
S
E
NG
A
H
C
IN
R
O
T
UC
D
N
O
IC
Fig.2 outline dimensions (unindicated tolerance:±0.30mm)
3