SAVANTIC 2SD1457A

SavantIC Semiconductor
Product Specification
2SD1457 2SD1457A
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PFa package
·High DC current gain
·DARLINGTON
·High VCBO
APPLICATIONS
·For power amplification
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PFa) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
CONDITIONS
Open emitter
2SD1457
Emitter-base voltage
UNIT
200
V
150
V
Open base
200
2SD1457A
VEBO
MAX
Open collector
5
V
IC
Collector current
6
A
ICM
Collector current-peak
10
A
PC
Collector power dissipation
TC=25
60
W
Ta=25
3.0
Tj
Junction temperature
150
Tstg
Storage temperature
-55~150
SavantIC Semiconductor
Product Specification
2SD1457 2SD1457A
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
VCEO(SUS)
V(BR)EBO
PARAMETER
CONDITIONS
2SD1457
Collector-emitter
sustaining voltage
MIN
TYP.
MAX
UNIT
150
V
IC=2A ;L=10mH
200
2SD1457A
Emitter-base breakdown voltage
IE=0.1A ;IC=0
VCEsat
Collector-emitter saturation voltage
IC=3A ;IB=60mA
1.5
V
VBEsat
Base-emitter saturation voltage
IC=3A ;IB=60mA
2.5
V
ICBO
Collector cut-off current
VCB=200V; IE=0
100
µA
hFE
DC current gain
IC=2A ; VCE=2V
Transition frequency
IC=0.5A ; VCE=10V;f=1MHz
fT
hFE Classifications
Q
P
O
700-2500
2000-5000
4000-10000
2
5
V
700
10000
15
MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1457 2SD1457A
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.30mm)
3