SavantIC Semiconductor Product Specification 2SD1457 2SD1457A Silicon NPN Power Transistors DESCRIPTION ·With TO-3PFa package ·High DC current gain ·DARLINGTON ·High VCBO APPLICATIONS ·For power amplification PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Fig.1 simplified outline (TO-3PFa) and symbol Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER VCBO Collector-base voltage VCEO Collector-emitter voltage CONDITIONS Open emitter 2SD1457 Emitter-base voltage UNIT 200 V 150 V Open base 200 2SD1457A VEBO MAX Open collector 5 V IC Collector current 6 A ICM Collector current-peak 10 A PC Collector power dissipation TC=25 60 W Ta=25 3.0 Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SD1457 2SD1457A Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO PARAMETER CONDITIONS 2SD1457 Collector-emitter sustaining voltage MIN TYP. MAX UNIT 150 V IC=2A ;L=10mH 200 2SD1457A Emitter-base breakdown voltage IE=0.1A ;IC=0 VCEsat Collector-emitter saturation voltage IC=3A ;IB=60mA 1.5 V VBEsat Base-emitter saturation voltage IC=3A ;IB=60mA 2.5 V ICBO Collector cut-off current VCB=200V; IE=0 100 µA hFE DC current gain IC=2A ; VCE=2V Transition frequency IC=0.5A ; VCE=10V;f=1MHz fT hFE Classifications Q P O 700-2500 2000-5000 4000-10000 2 5 V 700 10000 15 MHz SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SD1457 2SD1457A PACKAGE OUTLINE Fig.2 outline dimensions (unindicated tolerance:±0.30mm) 3