SavantIC Semiconductor Product Specification BD239/A/B/C Silicon NPN Power Transistors DESCRIPTION With TO-220C package ·Complement to type BD240/A/B/C APPLICATIONS ·For medium power linear and switching applications PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to mounting base 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS BD239 VCBO VCEO VEBO Collector-base voltage Collector-emitter voltage Emitter-base voltage BD239A VALUE 55 Open emitter 70 BD239B 90 BD239C 115 BD239 45 BD239A UNIT Open base 60 BD239B 80 BD239C 100 Open collector V V 5 V IC Collector current 2 A ICM Collector current-peak 4 A IB Base current 0.6 A PC Collector power dissipation 30 W Tj Junction temperature 150 Tstg Storage temperature -65~150 TC=25 SavantIC Semiconductor Product Specification BD239/A/B/C Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS BD239 VCEO(SUS) VCEsat Collector-emitter sustaining voltage MIN TYP. MAX UNIT 45 BD239A 60 IC=30mA; IB=0 V BD239B 80 BD239C 100 Collector-emitter saturation voltage IC=1 A;IB=0.2 A 0.7 V VBE Base-emitter on voltage IC=1A ; VCE=4V 1.3 V ICEO Collector cut-off current 0.3 mA 0.2 mA 1 mA BD239/A ICES VCE=30V; IB=0 BD239B/C VCE=60V; IB=0 BD239 VCE=45V; VBE=0 BD239A VCE=60V; VBE=0 BD239B VCE=80V; VBE=0 BD239C VCE=100V; VBE=0 Collector cut-off current IEBO Emitter cut-off current VEB=5V; IC=0 hFE-1 DC current gain IC=0.2A ; VCE=4V 40 hFE-2 DC current gain IC=1A ; VCE=4V 15 2 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions (unindicated tolerance:±0.10 mm) 3 BD239/A/B/C