SavantIC Semiconductor Product Specification 2SD1588 Silicon NPN Power Transistors DESCRIPTION ·With TO-220F package ·Complement to type 2SB1097 ·Low speed switching APPLICATIONS ·For low frequency power amplifier applications PINNING PIN DESCRIPTION 1 Base 2 Collector 3 Emitter Fig.1 simplified outline (TO-220F) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter 100 V VCEO Collector-emitter voltage Open base 60 V VEBO Emitter-base voltage Open collector 7 V IC Collector current (DC) 7 A ICM Collector current-Peak 15 A IB Base current 3.5 A PC Collector power dissipation TC=25 30 Ta=25 2 W Tj Junction temperature 150 Tstg Storage temperature -55~150 SavantIC Semiconductor Product Specification 2SD1588 Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS V(BR)CEO Collector-emitter breakdown voltage IC=50mA , IB=0 VCEsat Collector-emitter saturation voltage IC=5A; IB=0.5A 0.5 V VBEsat Base-emitter saturation voltage IC=5A ;IB=0.5A 1.5 V ICBO Collector cut-off current VCB=80V; IE=0 10 µA IEBO Emitter cut-off current VEB=5V; IC=0 10 µA hFE-1 DC current gain IC=3A ; VCE=1V 40 hFE-2 DC current gain IC=5A ; VCE=1V 20 hFE-1 Classifications R O Y 40-80 60-120 100-200 2 MIN TYP. MAX 60 UNIT V 200 SavantIC Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE Fig.2 outline dimensions 3 2SD1588