SAVANTIC BUH1015

SavantIC Semiconductor
Product Specification
BUH1015
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3PN package.
·High voltage.
·High switching speed.
APPLICATIONS
·Horizontal deflection for colour TV
and monitors.
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Fig.1 simplified outline (TO-3PN) and symbol
Absolute maximum ratings (Ta=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
1500
V
VCEO
Collector-emitter voltage
Open base
700
V
VEBO
Emitter-base voltage
Open collector
10
V
IC
Collector current (DC)
14
A
ICM
Collector current -peak
18
A
IB
Base current
8
A
IBM
Base current -peak
11
A
PC
Collector power dissipation
160
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~150
TC=25
SavantIC Semiconductor
Product Specification
BUH1015
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V(BR)EBO
Emitter-base breakdown voltage
IE=10mA; IC=0
10
V
VCEO(SUS)
Collector-emitter sustaining voltage
IC=100mA; IB=0
700
V
VCEsat
Collector-emitter saturation voltage
IC=10A; IB=2A
1.5
V
VBEsat
Base-emitter saturation voltage
IC=10A; IB=2A
1.5
V
ICES
Collector cut-off current
VCE=1500V ;VBE=0
Tj=125°C
0.2
2
mA
IEBO
Emitter cut-off current
VEB=5V; IC=0
0.1
mA
hFE
DC current gain
IC=10A ; VCE=5V
7
10
14
Switching times
ts
Storage time
tf
Fall time
1.5
µs
110
ns
IC=10A;IB1=2A;IB2=-6A;
VCC=400V
THERMAL CHARACTERISTICS
SYMBOL
Rth j-case
PARAMETER
Thermal resistance junction case
2
MAX
UNIT
0.78
/W
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.10 mm)
3
BUH1015