SAVANTIC MJ802

SavantIC Semiconductor
Product Specification
MJ802
Silicon NPN Power Transistors
DESCRIPTION
·With TO-3 package
·Complement to type MJ4502
·Excellent safe operating area
APPLICATIONS
·For use as an output device in
complementary audio amplifiers
to 100-Watts music power per
channel
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(TC=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
100
V
VCEO
Collector-emitter voltage
Open base
90
V
VEBO
Emitter-base voltage
Open collector
4
V
IC
Collector current
30
A
IB
Base current
7.5
A
PC
Collector power dissipation
200
W
Tj
Junction temperature
150
Tstg
Storage temperature
-65~200
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
MAX
UNIT
0.875
/W
SavantIC Semiconductor
Product Specification
MJ802
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
VCEO(SUS)
Collector-emitter sustaining voltage
IC=0.2A ;IB=0
VCE(sat)
Collector-emitter saturation voltage
IC=7.5A; IB=0.75A
0.8
V
VBE(sat)
Base-emitter saturation voltage
IC=7.5A; IB=0.75A
1.3
V
VBE
Base-emitter on voltage
IC=7.5A ; VCE=2V
1.3
V
ICBO
Collector cut-off current
VCB=100V; IE=0
TC=150
1.0
5.0
mA
IEBO
Emitter cut-off current
VEB=4V; IC=0
1.0
mA
hFE
DC current gain
IC=7.5A ; VCE=2V
25
Transition frequency
IC=1A ; VCE=10V;f=1.0MHz
2.0
fT
CONDITIONS
2
MIN
TYP.
MAX
90
UNIT
V
100
MHz
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
MJ802