SAVANTIC MJ15027

SavantIC Semiconductor
Product Specification
MJ15027
Silicon PNP Power Transistors
DESCRIPTION
·With TO-3 package
·Complement to type MJ15026
·Excellent safe operating area
APPLICATIONS
·For high power audio ,stepping
motor and other linear applications
·Relay or solenoid drviers
·DC-DC converters inverters
PINNING(see Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-3) and symbol
ABSOLUTE MAXIMUM RATINGS(TC=25 )
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
VCBO
Collector-base voltage
Open emitter
-200
V
VCEO
Collector-emitter voltage
Open base
-200
V
VEBO
Emitter-base voltage
Open collector
-7
V
IC
Collector current
-15
A
IB
Base current
-7
A
PC
Collector power dissipation
250
W
Ti
Junction temperature
175
Tstg
Storage temperature
-65~175
TC=25
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
MAX
UNIT
0.98
/W
SavantIC Semiconductor
Product Specification
MJ15027
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25
unless otherwise specified
SYMBOL
PARAMETER
V(BR)CEO
Collector-emitter breakdown voltage
IC=-50mA ;IB=0
-200
V
V(BR)EBO
Emitter-base breakdown voltage
IE=-1mA ;IC=0
-7
V
VCE(sat)
Collector-emitter saturation voltage
IC=-10A; IB=-1A
-2.0
V
VBE
Base-emitter on voltage
IC=-5A ; VCE=-5V
-1.5
V
ICBO
Collector cut-off current
VCB=-200V; IE=0
-0.1
mA
IEBO
Emitter cut-off current
VEB=-7V; IC=0
-0.1
mA
hFE
DC current gain
IC=-5A ; VCE=-5V
25
Transition frequency
IC=-0.5A ; VCE=-12V
15
fT
CONDITIONS
2
MIN
TYP.
MAX
UNIT
150
MHz
SavantIC Semiconductor
Product Specification
Silicon PNP Power Transistors
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
MJ15027