2N3828 0.1 A, 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES General Purpose Amplifier Transistor TO-92 G H Emitter Base Collector J A D Collector B REF. A B C D E F G H J K K Base E C F Emitter Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 40 V Emitter to Base Voltage VEBO 3 V Collector Current - Continuous IC 0.1 A Collector Power Dissipation PC 300 mW RθJA 416 °C / W TJ, TSTG 150, -55~150 °C Thermal resistance, junction to ambient Junction, Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Collector to Base Breakdown Voltage V(BR)CBO 40 - - V IC= 0.01mA, IE = 0A Collector to Emitter Breakdown Voltage V(BR)CEO 40 - - V IC= 1mA, IB = 0A Emitter to Base Breakdown Voltage V(BR)EBO 3 - - V IE= 0.01mA, IC = 0A ICBO - - 0.1 μA VCB= 60V, IE = 0 A Collector Cut-Off Current ICEX - - 50 nA VCE= 30V, VBE(off) = 3V Emitter Cut-Off Current IEBO - - 0.1 μA DC Current Gain hFE 30 - 200 Collector to Emitter Saturation Voltage VCE(sat) - - 0.3 Base to Emitter Saturation Voltage VBE(sat) - - fT 360 - Collector Cut-Off Current Transition Frequency Test Condition VEB= 5V, IC =0 mA VCE= 1V, IC= 12mA V IC= 50mA, IB= 5mA 0.95 V IC= 50mA, IB= 5mA - MHz VCE = 20V, IC = 10mA, f=100MHz . http://www.SeCoSGmbH.com/ 29-Dec-2010 Rev. A Any changes of specification will not be informed individually. Page 1 of 1