2SC1923 0.02 A , 40 V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES General Purpose Switching and Amplification TO-92 G H Emitter Collector Base J A CLASSIFICATION OF hFE Product-Rank 2SC1923-R 2SC1923-O 2SC1923-Y Range 40~80 70~140 100~200 D B REF. C A B C D E F G H J K K E F Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 Collector Base Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 40 V Collector to Emitter Voltage VCEO 30 V Emitter to Base Voltage VEBO 4 V IC 20 mA Collector Current - Continuous Collector Power Dissipation PC 100 mW RθJA 1250 °C / W TJ, TSTG 150, -55~150 °C Thermal Resistance From Junction To Ambient Junction, Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Collector to Base Breakdown Voltage V(BR)CBO 40 - - V IC=0.1mA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 30 - - V IC=1mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 4 - - V IE=0.1mA, IC=0 Collector Cut – Off Current ICBO - - 0.5 μA VCB=18V, IE=0 Emitter Cut – Off Current IEBO - - 0.5 μA DC Current Gain hFE 40 - 200 fT - 550 - Transition Frequency http://www.SeCoSGmbH.com/ 24-Feb-2011 Rev. A Test Conditions VEB=4V, IC=0 VCE=6V, IC=1mA MHz VCE=6V, IC=1mA Any changes of specification will not be informed individually. Page 1 of 1