2N5400 -0.6 A, -130 V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Switching and amplification in high voltage Applications such as telephony Low current(max.600mA) High voltage(max.130V) TO-92 G H Emitter Base Collector J A D REF. B Collector K E Base C Emitter F A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit VCBO VCEO VEBO IC PC TJ, TSTG -130 -120 -5 -600 625 150, -55~150 V V V mA mW °C Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Test Condition Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE1 hFE2 hFE3 -130 -120 -5 30 40 40 ----100 - -0.1 -0.1 180 -0.2 -0.5 -1 -1 6 - V V V μA μA IC=-100μA, IE = 0A IC=-1mA, IB = 0A IE=-10μA, IC = 0A VCB=-100V, IE = 0 A VEB=-3V, IC =0 mA VCE=-5V, IC=-1mA VCE=-5V, IC=-10mA VCE=-5V, IC=-50mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA IC=-10mA, IB=-1mA IC=-50mA, IB=-5mA VCB = -10V, IE = 0A, f=1MHz VCE = -10V, IC = -10mA, f=30MHz DC Current Gain Collector to Emitter Saturation Voltage VCE(sat) Base to Emitter Voltage VBE(sat) Collector Output Capacitance Transition Frequency http://www.SeCoSGmbH.com/ 29-Dec-2010 Rev. A Cob fT V V V V pF MHz Any changes of specification will not be informed individually. Page 1 of 2 2N5400 Elektronische Bauelemente -0.6 A, -130 V PNP Plastic Encapsulated Transistor CHARACTERISTIC CURVES http://www.SeCoSGmbH.com/ 29-Dec-2010 Rev. A Any changes of specification will not be informed individually. Page 2 of 2