2SA950 -0.8A , -35V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92 FEATURES 1W output applications Complementary to 2SC2120 G H Emitter Collector Base J CLASSIFICATION OF hFE (1) A Product-Rank 2SA950-O 2SA950-Y Range 100-200 160-320 D B K E C F REF. A B C D E F G H J K Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 Collector Base Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature VCBO VCEO VEBO IC PC TJ, TSTG -35 -30 -5 -0.8 600 150, -55~150 V V V A mW °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min Typ Max Unit Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE (1) hFE (2) VCE(sat) VBE fT Cob -35 -30 -5 100 35 -0.5 - 120 19 -0.1 -0.1 320 -0.7 -0.8 - V V V μA μA DC Current Gain Collector to Emitter Saturation Voltage Emitter to Base Voltage Transition Frequency Collector Output Capacitance http://www.SeCoSGmbH.com/ 14-Feb-2011 Rev. A V V MHz pF Test condition IC= -0.1mA, IE=0 IC= -10mA, IB=0 IE= -0.1mA, IC=0 VCB= -35V, IE=0 VEB= -5V, IC=0 VCE= -1V, IC= -100mA VCE= -1V, IC= -700mA IC= -500mA, IB= -20mA VCE= -1V, IC= -10mA VCE= -5V, IC= -10mA VCB= -10V, IE=0, f=1MHz Any changes of specification will not be informed individually. Page 1 of 2 2SA950 Elektronische Bauelemente -0.8A , -35V PNP Plastic Encapsulated Transistor CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 14-Feb-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 2