2N6727 -1.5 A, -50V PNP Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92 General Purpose Switching Application G H Emitter Base Collector J A D REF. B Collector A B C D E F G H J K K E Base C F Emitter Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO -50 V Collector to Emitter Voltage VCEO -40 V Emitter to Base Voltage VEBO -5 V Collector Current - Continuous IC -1.5 A Collector Power Dissipation PC 1 W RθJA 125 °C / W TJ, TSTG 150, -55~150 °C Thermal resistance, Junction to ambient Junction, Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Collector to Base Breakdown Voltage V(BR)CBO -50 - - V Collector to Emitter Breakdown Voltage V(BR)CEO -40 - - V IC= -10mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO -5 - - V IE= -1mA, IC=0 Collector Cut-Off Current ICBO - - -0.1 μA VCB= -50V, IE=0 Collector Cut-Off Current ICEO - - -1 μA VCE= -40V, IE=0 Emitter Cut-Off Current IEBO - - -0.1 μA VEB= -5V, IC=0 hFE (1) 50 - 250 hFE (2) 55 - - hFE (3) 60 - - VCE(sat) - - -0.5 V Base to Emitter Voltage VBE - - -1.2 V VCE= -1V, IC= -1A Collector Output Capacitance Cob - - 30 pF VCB= -10V, IE=0A, f=1MHz DC Current Gain Collector to Emitter Saturation Voltage http://www.SeCoSGmbH.com/ 13-Jan-2011 Rev. A Test Conditions IC= -1mA, IE=0 VCE= -1V, IC= -1A VCE= -1V, IC= -10mA VCE= -1V, IC= -100mA IC= -1A, IB= -100mA Any changes of specification will not be informed individually. Page 1 of 1