2N6517 0.5 A, 350V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES TO-92 High Voltage Transistors Complement of the 2N6520 G H Emitter Base Collector J A D B Collector REF. A B C D E F G H J K K E Base C F Emitter Millimeter Min. Max. 4.40 4.70 4.30 4.70 12.70 3.30 3.81 0.36 0.56 0.36 0.51 1.27 TYP. 1.10 2.42 2.66 0.36 0.76 ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise specified) Parameter Symbol Rating Unit Collector to Base Voltage VCBO 350 V Collector to Emitter Voltage VCEO 350 V Emitter to Base Voltage VEBO 6 V mA Collector Current - Continuous IC 500 Collector Power Dissipation PC 0.625 W RθJA 200 °C / W TJ, TSTG 150, -55~150 °C Thermal resistance, Junction to ambient Junction, Storage Temperature ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Collector to Base Breakdown Voltage V(BR)CBO 350 - - V IC=0.1mA, IE=0 Collector to Emitter Breakdown Voltage V(BR)CEO 350 - - V IC=1mA, IB=0 Emitter to Base Breakdown Voltage V(BR)EBO 6 - - V IE=0.01mA, IC=0 ICBO - - 0.05 μA VCB=250V, IE=0 μA Collector Cut-Off Current Emitter Cut-Off Current DC Current Gain IEBO - - 0.05 hFE (1)* 20 - - hFE (2)* 30 - - VCE=10V, IC=10mA hFE (3)* 30 - 200 VCE=10V, IC=30mA hFE (4)* 20 - 200 VCE=10V, IC=50mA hFE (5)* 15 - - VCE=10V, IC=100mA - - 0.3 - - 1.0 Collector to Emitter Saturation Voltage VCE(sat) * Base to Emitter Saturation Voltage VBE(sat) * Base to Emitter Voltage Collector to Base Capacitance 12-Jan-2011 Rev. A - - 0.75 - - 0.85 - - 0.9 VEB=5V, IC=0 VCE=10V, IC=1mA V IC=10mA, IB=1mA IC=50mA, IB=5mA IC=10mA, IB=1mA V IC=20mA, IB=2mA IC=30mA, IB=3mA VBE * - - 2 V VCE=10V, IC=100mA Cob - - 6 pF VCB=20V, IE=0A, f=1MHz 40 - 200 MHz Transition Frequency fT * *Pulse test：Pulse Width≦300μ s, Duty Cycle≦2.0％ http://www.SeCoSGmbH.com/ Test Conditions VCE=20V, IC=10mA, f=20MHz Any changes of specification will not be informed individually. Page 1 of 1