2N7002T N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-523 FEATURES High density cell design for low RDS(ON). Voltage controlled small signal switch. Rugged and reliable. High saturation current capability. DEVICE MARKING：K72 REF. A B C D G J Drain Gate Millimeter Min. Max. 1.50 1.70 0.75 0.95 0.60 0.80 0.23 0.33 0.50BSC 0.10 0.20 REF. K M N S Millimeter Min. Max. 0.30 0.50 o --10 o --10 1.50 1.70 Source MAXIMUM RATINGS (TA=25℃ unless otherwise specified) PARAMETER SYMBOL RATING UNIT VDS 60 V Drain Current ID 115 mA Power Dissipation PD 150 mW Operating Junction Temperature Range TJ 150 °C Operating Storage Temperature Range TSTG -55~150 °C Drain-Source Voltage http://www.SeCoSGmbH.com/ 10-Jun-2010 Rev. B Any changes of specification will not be informed individually. Page 1 of 3 2N7002T N-Channel Enhancement MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) CHARACTERISTICS Drain-Source Breakdown Voltage SYMBOL MIN TYP MAX UNIT TEST CONDITIONS V(BR)DSS 60 - - V VGS = 0V, ID = 10μA VGS(th) 1 - 2.5 V VDS= VGS, ID= 250μA Gate-Body Leakage IGSS - - ±80 nA VDS= 0V, VGS= ±25V Zero Gate Voltage Drain Current IDSS - - 80 nA VDS = 60V, VGS= 0V On-State Drain Current ID(ON) 500 - - mA VGS = 10V, VDS = 7V 1 - 7.5 1 - 7.5 80 - 500 0.5 - 3.75 Gate Threshold Voltage Drain-Source On Resistance Forward transfer admittance Drain-Source On Voltage RDS(ON) gfs VGS= 10V, ID = 500mA Ω VDS(ON) VGS= 5V, ID = 50mA mS VDS= 10V, ID = 200mA VGS = 10V, ID = 500mA V 0.05 - 0.375 Diode Forward Voltage VSD 0.55 - 1.2 Input Capacitance Ciss - - 50 Output Capacitance Coss - - 25 Reverse Transfer Capacitance Crss - - 5 VGS = 5V, ID = 50mA V IS= 115mA, VGS= 0V pF VDS= 25V, VGS= 0V, f= 1MHz SWITCHING TIME Turn-On Time Td(ON) - - 20 Turn-Off Time Td(OFF) - - 40 VGEN= 10V, VDD= 25V, nS ID= 500mA, RG= 25Ω, RL= 50Ω http://www.SeCoSGmbH.com/ 10-Jun-2010 Rev. B Any changes of specification will not be informed individually. Page 2 of 3 2N7002T Elektronische Bauelemente N-Channel Enhancement MOSFET TYPICAL CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 10-Jun-2010 Rev. B Any changes of specification will not be informed individually. Page 3 of 3