SCG3019 N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-523 A FEATURES M Low on-resistance. Fast switching speed. Low voltage drive makes this device ideal for portable equipment. Easily designed drive circuits. Easy to parallel. 3 3 C B Top View 1 1 2 L K 2 E D F Marking G REF. KN A B C D E F PACKAGE INFORMATION Package MPQ SOT-523 3K Leader Size Millimeter Min. Max. 1.5 1.7 1.45 1.75 0.7 0.9 0.7 0.9 0.9 1.1 0.15 0.35 H REF. G H J K L M J Millimeter Min. Max. 0.1 0.55 REF. 0.1 0.2 0.5 TYP. 0.25 0.325 7 inch Top View MAXIMUM RATINGS (TA=25℃ unless otherwise specified) PARAMETER SYMBOL RATING UNIT Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V Continuous Drain Current ID 0.1 A Total Power Dissipation PD 0.15 W Operating Junction Temperature Range TJ 150 °C Operating Storage Temperature Range TSTG -55~150 °C Thermal Resistance, Junction to Ambient RθJA 833 °C / W http://www.SeCoSGmbH.com/ 18-Dec-2013 Rev. B Any changes of specification will not be informed individually. Page 1 of 3 SCG3019 N-Channel Enhancement MOSFET Elektronische Bauelemente ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) CHARACTERISTICS SYMBOL MIN TYP MAX UNIT TEST CONDITIONS Off Characteristics Drain-Source Breakdown Voltage BVDSS 30 - - V VGS = 0V, ID = 10μA Zero Gate Voltage Drain Current IDSS - - 1 μA VDS = 30V, VGS = 0V Gate-Source Leakage IGSS - - ±1 μA VGS= ±20V, VDS=0V Gate Threshold Voltage VGS(th) 0.8 - 1.5 V VDS= 3V, ID=100μA Static Drain-Source On Resistance RDS(ON) - - 8 - - 13 20 - - Forward transfer admittance gfs Ω VGS= 4V, ID = 10mA VGS= 2.5V, ID = 1mA mS VDS= 3V, ID = 10mA pF VDS= 5V, VGS= 0V, f= 1MHz nS VGS= 5V, VDD= 5V, ID= 10mA, RG= 10Ω, RL= 500Ω Dynamic Characteristics Input Capacitance Ciss - 13 - Output Capacitance Coss - 9 - Reverse Transfer Capacitance Crss - 4 - Switching Characteristics Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time http://www.SeCoSGmbH.com/ 18-Dec-2013 Rev. B Td(ON) - 15 - Tr - 35 - Td(OFF) - 80 - Tf - 80 - Any changes of specification will not be informed individually. Page 2 of 3 SCG3019 Elektronische Bauelemente N-Channel Enhancement MOSFET CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 18-Dec-2013 Rev. B Any changes of specification will not be informed individually. Page 3 of 3