SUM6K1N

SUM6K1N
0.1A , 30V , RDS(ON) 8 
N-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
SOT-363
These miniature surface mount MOSFETs utilize a high
cell density trench process to provide low RDS(on) and to
ensure minimal power loss and heat dissipation.
A
E
FEATURES




L
B
Low RDS(on) provides higher efficiency and extends
battery life
Low thermal impedance copper leadframe SOT-363
saves board space
Fast switching speed
High performance trench technology
F
C
REF.
A
B
C
D
E
F
DC-DC converters and power management in portable
and battery-powered products such as computers, printers,
PCMCIA cards, cellular and cordless telephones.
J
K
DG
APPLICATION
H
Millimeter
Min.
Max.
1.80
2.20
1.80
2.45
1.15
1.35
0.80
1.10
1.10
1.50
0.10
0.35
REF.
G
H
J
K
L
Millimeter
Min.
Max.
0.100 REF.
0.525 REF.
0.08
0.25
8°
0.650 TYP.
MARKING
K1
PACKAGE INFORMATION
Package
MPQ
SOT-363
3K
Leader Size
7 inch
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
1
Power Dissipation 1
Maximum Junction to Ambient
1
Operating Junction and Storage Temperature Range
http://www.SeCoSGmbH.com/
24-Sep-2013 Rev. B
Symbol
Ratings
Unit
VDS
30
V
VGSS
±20
V
ID
0.1
A
PD
0.15
W
RJA
833
°C / W
TJ, TSTG
150, -55~150
°C
Any changes of specification will not be informed individually.
Page 1 of 3
SUM6K1N
0.1A , 30V , RDS(ON) 8 
N-Channel Enhancement Mode MOSFET
Elektronische Bauelemente
ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified)
Parameter
Symbol
Min.
Typ.
Max.
Unit
Teat Conditions
Static
Drain-Source Breakdown Voltage
VDS
30
-
-
V
ID=10uA, VGS=0
Zero Gate Voltage Drain Current
IDSS
-
-
1
uA
VDS=30V, VGS=0
Gate-Source Leakage Current
IGSS
-
-
±1
uA
VDS=0, VGS=±20V
Gate-Threshold Voltage
VGS(th)
0.8
-
1.5
V
VDS=3V, ID=100uA
Drain-Source On-Resistance
RDS(ON)
-
-
8
-
-
13
20
-
-
Forward Transconductance
gfs
Dynamic
Input Capacitance
CISS
-
13
-
9
-
Reverse Transfer Capacitance
CRSS
-
4
-
Turn-on Delay Time
Td(on)
-
15
-
Tr
-
35
-
Td(off)
-
80
-
Tf
-
80
-
Fall Time
S
VDS=3V, ID=10mA
-
COSS
Turn-off Delay Time
VGS=2.5V, ID=1mA
1
Output Capacitance
Rise Time
VGS=4V, ID=10mA
Ω
nC
VDS=5V,
VGS=0,
f=1MHz
nS
VDD=5V,
VGS=5V,
Rg=10Ω,
RL=500Ω,
ID=10mA
Notes:
1. These parameters have no way to verify
http://www.SeCoSGmbH.com/
24-Sep-2013 Rev. B
Any changes of specification will not be informed individually.
Page 2 of 3
SUM6K1N
Elektronische Bauelemente
0.1A , 30V , RDS(ON) 8 
N-Channel Enhancement Mode MOSFET
CHARACTERISTIC CURVES
http://www.SeCoSGmbH.com/
24-Sep-2013 Rev. B
Any changes of specification will not be informed individually.
Page 3 of 3