SMG2310A N-Ch Enhancement Mode Power MOSFET 5.0 A, 60 V, RDS(ON)=115 mΩ Elektronische Bauelemente sRoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SC-59 DESCRIPTIONS A The SMG2310A utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SMG2310A is universally used for all commercial-industrial applications. L 3 3 C B Top View 1 1 2 K E 2 FEATURES D Simple Drive Requirement, Small Package Outline Super High Density Cell Design for Extremely Low RDS(ON) F G REF. MARKING CODE A B C D E F N-Channel Drain 3 3 D Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 H J REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 1 2310A Gate 1 G 2 2 S Source ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 Pulsed Drain Current1,2 Power Dissipation Linear Derating Factor Operating Junction & Storage Temperature Range Thermal Resistance Junction-ambient3 Max SYMBOL RATINGS UNIT VDS VGS ID @TA=25°C ID @TA=70°C IDM PD @TA=25°C 60 ±20 5.0 4.0 10 1.38 0.01 -55 ~ +150 V V A A A W W/°C °C 90 °C /W TJ, TSTG THERMAL DATA RθJA ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) PARAMETER Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj=25°C) Drain-Source Leakage Current(Tj=55°C) SYMBOL MIN. TYP. MAX. UNIT TEST CONDITIONS 60 V VGS = 0, ID = 250µA 0.5 1.5 V VDS = VGS, ID = 250µA 12 S VDS = 15V, ID = 4A ±100 nA VGS = ±20V 1 µA VDS = 60V, VGS = 0 IDSS 10 µA VDS = 60V, VGS = 0 115 VGS = 10 V, ID = 5.0 A Static Drain-Source On-Resistance RDS(ON) mΩ 125 VGS = 4.5 V, ID = 4.5 A Total Gate Charge2 Qg 4.0 ID = 4A nC VDS = 30V Gate-Source Charge Qgs 1.2 VGS = 4.5V Gate-Drain (“Miller”) Charge Qgd 1.0 Turn-on Delay Time2 Td(on) 6 VDD = 30V RG= 6Ω Rise Time Tr 12 ns ID = 2.5A, VGS = 10 V Turn-off Delay Time Td(off) 18 RL =12Ω Fall Time Tf 10 Input Capacitance Ciss 320 VGS = 0 V pF VDS = 30V Output Capacitance Coss 42 f = 1.0MHz Reverse Transfer Capacitance Crss 20 SOURCE-DRAIN DIODE Forward On Voltage2 VSD 1.2 V IS = 2.5 A, VGS = 0V Notes: 1. Pulse width limited by Max. Junction Temperature. 2. Pulse width≦300µs, duty cycle≦2%. 3. Surface mounted on 1 in2 copper pad of FR4 board; 270°C/W when mounted on M in. copper pad. 24-Nov-2009 Rev. A BVDSS VGS(th) gfs IGSS Page 1 of 3 SMG2310A Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 5.0 A, 60 V, RDS(ON)=115 mΩ CHARACTERISTIC CURVE 24-Nov-2009 Rev. A Page 2 of 3 SMG2310A Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 5.0 A, 60 V, RDS(ON)=115 mΩ CHARACTERISTIC CURVE 24-Nov-2009 Rev. A Page 3 of 3