SSK3018K 100mA, 30V N-Channel MOSFET Elektronische Bauelemente RoHS Compliant Product A Suffix of “-C” specifies halogen & lead-free SOT-323 DESCRIPTION Low on-resistance Fast switching speed Low voltage drive (2.5V) makes this device ideal for portable equipment Easily designed drive circuits Easy to parallel A L 3 3 C B Top View 1 1 K 2 E 2 3 DRAIN D F FEATURES Simple drive requirement Small package outline REF. 1 GATE *Gate Protection Diode DEVICE MARKING: KN A B C D E F 2 SOURCE H G Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.20 1.40 0.20 0.40 REF. G H J K L J Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 0.650 TYP. MAXIMUM RATINGS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL RATING UNIT Drain – Source Voltage VDS 30 V Gate – Source Voltage VGS ±20 V Continuous Drain Current ID 100 mA Pulsed Drain Current (tp≦10µS) IDM 400 mA PD 200 mW TJ, TSTG 150, -55~150 °C Power Dissipation * Operating Junction & Storage Temperature Range Note: With each pin mounted on the recommended lands. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) PARAMETER SYMBOL MIN TYP MAX UNIT TEST CONDITION STATIC CARACTERISTICS Drain-Source Breakdown Voltage V(BR)DSS 30 - - V VGS=0V, ID =10µA Gate-Threshold Voltage VGS(TH) 0.8 - 1.5 V VDS= 3V, ID =100µA Gate-Source Leakage Current IGSS - - ±1.0 Drain-Source Leakage Current IDSS - - 1.0 µA VDS=30V, VGS=0V - 5.0 8.0 - 7.0 13 Ω VGS=4V, ID=10mA 20 - - ms VDS=3V, ID=10mA pF VDS=5V VGS=0V f=1MHz nS VGS=5V I D=10mA RL=500Ω RG=10Ω Static Drain-Source On-Resistance RDS(ON) Forward Transconductance gFS Input Capacitance CISS µA VGS=±20V VGS=2.5V, ID=1mA DYNAMIC CHARACTERISTICS - 13 - Output Capacitance COSS - 9 - Reverse Transfer Capacitance CRSS - 4 - SWITCHING CHARACTERISTICS Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time 10-Jan-2010 Rev. A Td(ON) - 15 - TR - 35 - Td(OFF) - 80 - TR - 80 - Page 1 of 3 SSK3018K Elektronische Bauelemente 100mA, 30V N-Channel MOSFET CHARACTERISTIC CURVES 10-Jan-2010 Rev. A Page 2 of 3 SSK3018K Elektronische Bauelemente 100mA, 30V N-Channel MOSFET CHARACTERISTIC CURVES 10-Jan-2010 Rev. A Page 3 of 3