2SD667A 1A , 120V NPN Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free TO-92MOD FEATURES Low Frequency Power Amplifier Complementary Pair with 2SB647A A D B K E CLASSIFICATION OF hFE (1) F C Product-Rank 2SD667A-B 2SD667A-C 2SD667A-D Range 60~120 100~200 160~320 N G H 1 Emitter 2 Collector 3 Base M L Collector J 2 REF. A B C D E F G 3 Base 1 Emitter Millimeter Min. Max. 5.50 6.50 8.00 9.00 12.70 14.50 4.50 5.30 0.35 0.65 0.30 0.51 1.50 TYP. Millimeter Min. Max. 1.70 2.05 2.70 3.20 0.85 1.15 1.60 Max 0.00 0.40 4.00 Min REF. H J K L M N ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction, Storage Temperature Symbol Rating Unit VCBO VCEO VEBO IC PC TJ, TSTG 120 100 5 1 0.9 150, -55~150 V V V A W °C ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Collector to Base Breakdown Voltage Collector to Emitter Breakdown Voltage Emitter to Base Breakdown Voltage Collector Cut-Off Current Emitter Cut-Off Current V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE (1) hFE (2) VCE(sat) VBE fT Cob 120 100 5 60 30 - 140 12 10 10 320 1 1.5 - V V V µA µA DC Current Gain Collector to Emitter Saturation Voltage Base to Emitter Voltage Transition Frequency Collector Output Capacitance http://www.SeCoSGmbH.com/ 7-Oct-2011 Rev. A V V MHz pF Test Conditions IC=10µA, IE=0 IC=1mA, IB=0 IE=10µA, IC=0 VCB=100V, IE=0 VEB=4V, IC=0 VCE=5V, IC=150mA VCE=5V, IC=500mA IC=500mA, IB=50mA VCE=5V, IC=150mA VCE=5V, IC=150mA VCB=10V, IE=0, f=1MHz Any changes of specification will not be informed individually. Page 1 of 1