2SA1579 -0.05A , -120V PNP Silicon Plastic Encapsulated Transistor Elektronische Bauelemente RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free SOT-323 FEATURES High Breakdown Voltage. (BVCEO = -120V) Complementary of the 2SC4102 A L 3 3 C B Top View 1 CLASSIFICATION OF hFE 1 Product-Rank 2SA1579-R 2SA1579-S Range 180~390 270~560 Marking RR RS K 2 E 2 D F G REF. PACKAGE INFORMATION Package MPQ LeaderSize SOT-323 3K 7’ inch A B C D E F Millimeter Min. Max. 1.80 2.20 1.80 2.45 1.15 1.35 0.80 1.10 1.20 1.40 0.20 0.40 H J REF. G H J K L Millimeter Min. Max. 0.100 REF. 0.525 REF. 0.08 0.25 0.650 TYP. Collector Base Emitter ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Parameter Collector to Base Voltage Collector to Emitter Voltage Emitter to Base Voltage Collector Current - Continuous Collector Power Dissipation Junction and Storage Temperature Symbol Ratings Unit VCBO VCEO VEBO IC PC TJ, TSTG -120 -120 -5 -50 100 150, -55~150 V V V mA mW °C ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Parameter Symbol Min. Typ. Max. Unit Collector to Base Breakdown Voltage Collector to Emitter Breakdown Emitter to Base Breakdown Voltage Collector Cut - off Current Emitter Cut - off Current V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO -120 -120 -5 - - -0.5 -0.5 V V V A A hFE 180 - 560 VCE(sat) - - -0.5 V IC= -10mA, IB= -1mA fT - 140 - MHz VCE= -12V, IC= -2mA, f= 30MHz Cob - 3.2 - pF DC Current Gain Collector to Emitter Saturation Voltage Transition Frequency Collector Output Capacitance http://www.SeCoSGmbH.com/ 26-Jan-2011 Rev. A Test Conditions IC= -50A, IE=0 IC= -1mA, IB=0 IE= -50A, IC=0 VCB= -100V, IE=0 VEB= -4V, IC=0 VCE= -6V, IC= -2mA VCB= -12V, IE=0, f=1MHz Any changes of specification will not be informed individually. Page 1 of 2 2SA1579 Elektronische Bauelemente -0.05A , -120V PNP Silicon Plastic Encapsulated Transistor CHARACTERISTIC CURVE http://www.SeCoSGmbH.com/ 26-Jan-2011 Rev. A Any changes of specification will not be informed individually. Page 2 of 2