SECOS 2SD1781

2SD1781
0.8A, 40V
NPN Silicon Plastic Encapsulated Transistor
Elektronische Bauelemente
RoHS Compliant Product
A suffix of “-C” specifies halogen & lead-free
SOT-23
FEATURES
 Very low VCE(sat).VCE(sat) < 0.4 V (Typ.)
(IC /IB = 500mA / 50mA)
 Complements to 2SB1197
A
L
3
3
C B
Top View
1
1
K
CLASSIFICATION OF hFE
Product-Rank
2SD1781-Q
2SD1781-R
Range
120 ~ 270
180 ~ 390
Marking
AFQ
AFR
E
G
REF.
PACKAGE INFORMATION
MPQ
LeaderSize
SOT-23
3K
7’ inch
2
D
F
Package
2
Collector


A
B
C
D
E
F
Millimeter
Min.
Max.
2.80
3.00
2.25
2.55
1.20
1.40
0.90
1.15
1.80
2.00
0.30
0.50
H
REF.
G
H
J
K
L
J
Millimeter
Min.
Max.
0.10 REF.
0.55 REF.
0.08
0.15
0.5 REF.
0.95 TYP.
Emitter

Base
ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted)
Parameter
Symbol
Ratings
Unit
VCBO
VCEO
VEBO
IC
PC
TJ, TSTG
40
32
5
0.8
200
150, -55~150
V
V
V
A
mW
°C
Collector to Base Voltage
Collector to Emitter Voltage
Emitter to Base Voltage
Collector Current - Continuous
Collector Power Dissipation
Junction and Storage Temperature
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Parameter
Symbol
Min.
Typ.
Max.
Unit
BVCBO
BVCEO
BVEBO
40
32
5
-
-
V
V
V
IC = 50A, IE = 0
IC = 1mA, IB = 0
IE = 50A, IC = 0
Collector Cut-off Current
ICBO
-
-
0.5
Emitter Cut-off Current
IEBO
-
-
0.5
A
A
VEB = 4V, IC = 0
DC Current Gain
hFE
120
-
390
VCE(sat)
-
-
0.4
V
fT
Cob
-
150
10
-
MHz
pF
Collector–Base Breakdown Voltage
Collector–Emitter Breakdown Voltage
Emitter–Base Breakdown Voltage
Collector–Emitter Saturation Voltage
Transition Frequency
Collector Output Capacitance
http://www.SeCoSGmbH.com/
30-Dec-2010 Rev. A
Test Conditions
VCB = 20V, IE = 0
IC = 100mA, VCE = 3V
IC = 500mA, IB = 50mA
VCE = 5V, IC = 50mA, f = 100MHz
VCB = 10V, IE = 0, f = 1.0MHz
Any changes of specification will not be informed individually.
Page 1 of 3
2SD1781
Elektronische Bauelemente
0.8A, 40V
NPN Silicon Plastic Encapsulated Transistor
CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
30-Dec-2010 Rev. A
Any changes of specification will not be informed individually.
Page 2 of 3
2SD1781
Elektronische Bauelemente
0.8A, 40V
NPN Silicon Plastic Encapsulated Transistor
CHARACTERISTICS CURVE
http://www.SeCoSGmbH.com/
30-Dec-2010 Rev. A
Any changes of specification will not be informed individually.
Page 3 of 3